Fuji Electric 7MBP25RA-120 Data Sheet

7MBP25RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
VR
IC
ICP

-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

-

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900

1000
800
1200
1200
25
50
25
198
15
30
15
120
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

1200V / 25A 7 in one-package

V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode

ICES
VCE(sat)
VF
ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=25A

-Ic=25A
VCE=1200V input terminal open
Ic=15A

-Ic=15A

– – 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.0 V

7MBP25RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature Fig.1

surface of IGBT chips

Tj=125°C
Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 38
23

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

-

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=25A, VDC=600V
toff
trr IF=25A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD
DB IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.63

- 1.33

- 1.04

0.05 -

°C/W
°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

7MBP25RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

7MBP25RA120

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Characteristics (Representative)

Control Circuit

IGBT-IPM

Power supply current vs. Switching frequenc

Tj=100°C

30

P-side

25

20

15

10

5

N-side

Power supply current : Icc (mA)

0

0 5 10 15 20 25

Switching frequency : fsw (kHz

Under voltage vs. Junction temperature

14

12

10

Vcc=17V
Vcc=15V

Vcc=13V

Vcc=17V
Vcc=15V

Vcc=13V

Input signal threshold volta ge

vs. Power supply vo ltage

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Under voltage hysterisis vs. Jnction temperature

1

0.8

Tj=25°C
Tj=125°C

} Vin(off)

} Vin(on)

8

6

4

Under vo lt a g e : VUVT (V )

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

0.5

Alarm hold time : tALM (mSec)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Tj=25°C

0.6

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

50

OH hyst erisis : TcH,TjH (°C)

Over heating pr otect ion : TcOH, TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

TcH,TjH

7MBP25RA120

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Inverter

IGBT-IPM

Collector current vs. Collecto r- Em itter voltage

Tj=25°C

40

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Colle ctor-Emitte r vo ltage : Vce (V)

Switching time vs. Collect or current

Edc=600V,Vcc=15 V,T

10000

1000

=25°C

Vcc=15V

Vcc=13V

toff

ton

Collector current vs. Collector-Emitter voltage

Tj=125°C

40

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current

Edc=600V,Vcc=15V,T

10000

1000

=125°C

Vcc=15V

Vcc=13V

toff

ton

100

Switching time : ton,toff,tf (nSec)

10

0 5 10 15 20 25 30 35 40

Collector current : Ic (A

Forward current vs. Forward voltage

40

35

30

25

20

15

Forward Current : If (A)

10

5

125°C

tf

tf

100

Switching time : t on,to f f,t f (n Se c)

10

0 5 10 15 20 25 30 35 40

Collector current : Ic (A

Reverse recovery characterist i cs

trr, Ir r vs . IF

1000

25°C

100

10

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

trr125°C

trr25°C

Irr125°C

Irr25°C

0

00.511.522.53

Forward voltage : Vf (V)

1

0 5 10 15 20 25 30 35 40

Forward current : IF(A)

7MBP25RA120

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(

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j

IGBT-IPM

Transient thermal resistance

10

1

0.1

Thermal resistanc e : Rth(j-c ) (°C/W )

0.01

0.001 0.01 0.1 1

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

250

FWD

IGBT

Reversed biased safe operating area

Vcc=15V,T

350

300

250

200

SCSOA

150

100

Collector current : Ic (A)

50

0

0 200 400 600 800 1000 1200 1400

(non-repetitive pulse)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vce (V

125°C

Power derating for FWD

per device

100

200

150

100

50

Collecter Power Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=25°C

12

10

8

6

4

2

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 5 10 15 20 25 30 35 40

Collector current : Ic (A)

Eon

Eoff

Err

80

60

40

20

Collecter Power Diss ipation : Pc (W)

0

0 20406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

12

Edc=600V,Vcc=15V,T

10

8

6

4

2

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 5 10 15 20 25 30 35 40

Collector current : Ic (A)

=125°C

Eon

Eoff

Err

7MBP25RA120

Over current protection vs. Junction temperature

100

80

60

40

20

Over current protection level : Ioc(A)

0

0 20406080100120140

Junction temperature : Tj(°C)

IGBT-IPM

Vcc=15V

7MBP25RA120

Brake

IGBT-IPM

Collector current vs. Collector-Emitter voltage

Tj=25°C

25

20

15

10

Collector Current : Ic (A)

5

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V)

Vcc=17V

Vcc=15V

Vcc=13V

Transient therma l res istance

10

Collector current vs. Collector-Emitter voltage

25

20

15

10

Collector Current : Ic (A)

5

0

00.511.522.53
Collector-Emitter voltage : Vce (V)

Tj=125°C

Vcc=15V

Vcc=17V

Vcc=13V

Reversed biased safe operating area

210

Vc c = 15V, Tj 125°C

180

<

=

1

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0 .1 1
Pulse width :Pw (sec)

Power der ati ng for IGB T

(per device)

140

120

100

80

60

40

20

Collecter Pow er D issipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

IGBT

150

120

90

60

Collector current : Ic (A)

30

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitive puls e)

Collector-Emitter voltage : Vc e (V)

Over current protec ti on vs. Junction temperature

80
70
60
50
40
30
20

Over current protection level : Ioc(A)

10

0

0 20 40 60 80 100 120 140

Junction temperature : Tj(°C)

Vc c = 15V