Fuji Electric 7MBP150RA-120 Data Sheet

7MBP150RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
VR
IC
ICP

-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

-

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900

1000
800
1200
1200
150
300
150
1040
50
100
50
400
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

1200V / 150A 7 in one-package

V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condtion Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode

ICES
VCE(sat)
VF
ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=150A

-Ic=150A
VCE=1200V input terminal open
Ic=50A

-Ic=50A

– – 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.3 V

7MBP150RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C
Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.70

­ 110

­ 150

­ 225
75

-

11.0

0.2

1.5

­1425

-

-

1.35

2.05

8.0

­ 20

­ 20

-

­ 10

-

­ 2

­1500

18
65

1.70

2.40

­ 125

-

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=150A, VDC=600V
toff
trr IF=150A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD
DB IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.12

- 0.29

- 0.31

0.05 -

°C/W
°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

7MBP150RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

7MBP150RA120

Characteristics (Representative)

Control Circuit

IGBT-IPM

Powe r supply current vs. Switching frequency

Tj=100°C

80
70
60
50
40
30
20

Power supply current : Icc (mA)

10

0

0 5 10 15 20 25

14

12

10

P-side
N-side

Vcc=17V
Vcc=15V
Vcc=13V

Switching frequency : f sw (kHz)

Under voltage vs. Junction temperature

Vcc=17V
Vcc=15V

Vcc=13V

Input signal threshold volta ge

vs. Power supply vo ltage

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supp ly volt age : Vc c (V)

Under voltage hysterisis vs. Jnction temperature

1

0.8

Tj=25°C
Tj=125°C

} Vin(off)

} Vin(on)

8

6

4

Under vo lt a g e : VUVT (V )

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

0.5

Alarm hold time : tALM (mSec)

0

12 13 14 15 16 17 18

Power supp ly volt age : Vcc (V)

Tj=25°C

0.6

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

50

OH hyst erisis : TcH,TjH (°C)

Over heating protect ion : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

TcH,TjH

7MBP150RA120

Inverter

IGBT-IPM

Collector current vs. Collector-Emitter voltage

Tj=25°C

250

Vcc=17V

200

150

100

Collector Current : Ic (A)

50

0

0.511.522.533.5
Collector-Emitter voltage : Vce (V)

Vcc=15V

Vcc=13V

Switching time vs. Collector current

Edc=600V,Vcc=15V,Tj=25°C

10000

toff

1000

ton

Collector current vs. Collector-Emitter voltage

250

200

150

100

Collector Current : Ic (A)

50

0

0.511.522.533.5
Collector-Emitter voltage : Vce (V)

Tj=125°C

Vcc=15V

Vcc=17V

Vcc=13V

Switching time vs. Collector current

10000

1000

Edc=600V,Vcc=15V,Tj=125°C

toff

ton

100

Switching time : ton,toff,tf (nSec)

10

0 50 100 150 200 250

Collector current : Ic (A)

Forward current vs. Forward voltage

250

125°C

200

150

100

Forward Current : If (A)

50

tf

tf

100

Switching time : ton,toff,tf (nSec)

10

0 50 100 150 200 250

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs. IF

trr125°C

25°C

100

trr25°C

Irr125°C

Irr25°C

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

0

00.511.522.53
Forward voltage : Vf (V)

10

0 50 100 150 200 250

Forward current : IF(A)

7MBP150RA120

IGBT-IPM

1

Transient ther mal resistance

0.1

0.01

Thermal resi stance : Rth(j-c) (°C/W)

0.001

0.001 0.01 0.1 1
Pu lse width :Pw (sec)

Powe r derating for IGBT

(per device)

1200

1000

FWD

IGBT

Reversed biased safe operating area

Vcc=15V,Tj 125°C

2100

1800

1500

1200

900

600

Collector current : Ic (A)

300

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vc e (V)

<

=

Powe r der at ing for FWD

(per device)

500

400

800

600

400

200

Collecter Power Dissipation : Pc (W)

0

020406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Co llector Current

60

50

40

30

20

Ed c=6 00V,Vcc =15V,Tj=2 5 °C

Eon

Eoff

300

200

100

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Case Temperature : Tc (°C)

Sw itching Loss vs. Collector Current

Edc=600V,Vc c =15V,Tj=125°C

60

50

40

30

20

Eon

Eoff

10

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200 250

Collector current : Ic (A)

Err

10

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200 250

Collector current : Ic (A)

Err

7MBP150RA120

Over current protection vs. Junction temperature

600

500

400

300

200

100

Over current protection level : Ioc(A)

0

0 20 4 0 60 80 100 120 140

Junction temperature : Tj(°C)

IGBT-IPM

Vcc=15V

7MBP150RA120

j

)

j

)

Brake

IGBT-IPM

Collector current vs. Collector-Emitter voltage

=25°C

80

T

70

60

50

40

30

Collector Current : Ic (A)

20

10

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V

Vcc=15V

Vcc=17V

Vcc=13V

Transi ent ther mal resistance

1

IGBT

Collector current vs. Collector-Emitter voltage

=125°C

80

70

60

50

40

30

Collector Current : Ic (A)

20

10

0

0 0.5 1 1.5 2 2.5 3

T

Vcc=17V

Coll e ctor-Emitter voltage : Vce (V

Reversed biased safe operating area

700

600

500

Vcc=15V,Tj 125°C

Vcc=15V

Vcc=13V

0.1

Thermal resist ance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

400

350

300

250

200

150

100

Collecter Power Dissipation : Pc (W)

50

400

SCSOA

300

200

Collector current : Ic (A)

100

0

0 200 400 600 800 1000 1200 1400

(non-re pet itiv e p ulse)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vce (V)

Over current protection vs. Junction temperature

Vcc=15V

200

150

100

50

Over current protection level : Ioc(A)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

0

020406080100120140

Junction temperature : Tj(°C)