Fuji Electric 7MBP150RA-060 Data Sheet

7MBP150RA060

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
VR
IC
ICP

-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0
0

-

-

-

-

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

450

500
400
600
600
150
300
150
595
50
100
50
198
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

600V / 150A 7 in one-package

V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode

ICES
VCE(sat)
VF
ICES
VCE(sat)
VF

VCE=600V input terminal open
Ic=150A

-Ic=150A
VCE=600V input terminal open
Ic=50A

-Ic=50A

– – 1.0 mA
– – 2.8 V
– – 3.0 V
– – 1.0 mA
– – 2.8 V
– – 3.3 V

7MBP150RA060

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature Fig.1

surface of IGBT chips

Tj=125°C Collector current
Tj=125°C Collector current
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 225
75

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

-

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm

*7 Switching frequency of IPM

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

Ioc

ton IC=150A, VDC=300V
toff
trr IF=150A, VDC=300V

0.3 - -

- - 3.6

- - 0.4

tsc

µs
µs
µs

Ic

ALM

I

Fig.2Def i nit i onof OCDela yTime

ALM

I

DOC

t

Fig.3Definitionoftsc

Input Signal

CollectorCurrent
(Ic)

ALM

I

trr

Irr

90%

Fig.4Definition of  Switching Time

IcIc Ic

ALM

I

90%

10%

tf

toffton

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD
DB IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.21

- 0.47

- 0.63

0.05 -

°C/W
°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 400 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

7MBP150RA060

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Short circuit protection circuit
b) Amplifier for driver
c) Undervoltage protection circuit
d) Over current protection circuit
e) IGBT chip over heating protection

Outline drawings, mm

±0.3

±0.3±0.3

±0.3

2

22

2

20

2020

2020

±1

±1±1

±1

±0.3

±0.3±0.3

±0.3

88

8888

88

74

7474

74

10

1010

10

2020

2017

1717

17

0.5

0.50.5

0.5

0.5

0.50.5

6‑M5

±1

±1

±1±1

109

109

109109

±0.3

±0.3

±0.3±0.3

95

95

10.16

10.16

10.1610.16

±0.15 ±0.15

±0.15±0.15

5.08

5.085.08

9595

67.4

67.4

67.467.4

±0.2 ±0.2

±0.2 ±0.25

±0.2±0.2

±0.2±0.2

10.16

10.1610.16

±0.15

±0.15±0.15

5.08

5.085.08

5.085.08

7

77

15.24

15.24

15.2415.24

2.54

2.54

2.542.54

1044447

1010

±0.3

±0.3

±0.3±0.3

13.8

13.8

13.813.8

3.22

3.22

3.223.22

±0.3

±0.3

±0.3±0.3

±0.2

±0.2 ±0.2

±0.2±0.2

10.16

10.16 10.16

10.1610.16

±0.15

±0.15 ±0.15

±0.15±0.15

5.08

5.08

5.085.08

111110

B

P

N

W

24

24 26

2424

V

26 26

2626

16‑

16‑ 2‑φ

16‑16‑

260.5

2626

0.64

0.64 2.5

0.640.64

±0.25

±0.25±0.25

±0.1

±0.1

±0.1±0.1

U

2‑φ

2‑φ2‑φ

4‑φ

4‑φ

5.5

5.5

4‑φ4‑φ

5.55.5

（（（（内内内内径径径径））））

16

16

1616

2.5

2.52.5

9

99

9

7

77

7

31

3131

‑0.3

+1.0

‑0.3‑0.3

‑0.3

+1.0+1.0

+1.0

22

2222

22

+1.0

‑0.2

+1.0+1.0

+1.0

‑0.2‑0.2

‑0.2

8

88

8

12.5

12.512.5

12.5

31

‑0.3

+1.0

‑0.3‑0.3

‑0.3

+1.0+1.0

+1.0

22

2222

22

17

1717

17

Mass : 440g