Fuji Electric 6MBP75RA-060 Data Sheet

6MBP75RA060

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
Duty=61.7%
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

450

500
400
600
75
150
75
320
150
20
Vz
1
Vcc
15
125
100
AC2.5

3.5 *6

3.5 *6

600V / 75A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=600V input terminal open
Ic=75A

-Ic=75A

– – 1.0 mA
– – 2.8 V
– – 3.0 V

6MBP75RA060

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm

*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 113

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=75A, VDC=300V
toff
trr IF=75A, VDC=300V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Definition of tsc

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.39

- 0.90

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 400 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP75RA060 IGBT-IPM

Block diagram

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

6MBP75RA060

Characteristics (Representative)

Control circuit

IGBT-IPM

Power supply current vs. Switching frequency

35

30

25

20

15

10

Tj=100°C

Power supply current Icc (mA)

5

0

0 5 10 15 20 25

Switching frequency fsw (kHz)

·········

Undervoltage vs. Junction temperature

14

12

10

8

N-side
P-side

Input signal threshold voltage
vs. Power supply voltage

2.5

2.0

1.5

1.0

ON), Vin (OFF), (V)

0.5

Input signal threshold voltage

Vin (

0

12 13 14 15 16 17 18

Power supply voltage Vcc (V)

Undervoltage hysterisis vs. Junction temperature

1.0

0.8

0.6

·········

Tj=25°C
Tj=125°C

6

4

Undervoltage VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature Tj (°C)

Alarm hold time vs. Power supply voltage

3.0

2.5

2.0

1.5

1.0

Alarm hold time tALM (msec.)

0.5

0

12 13 14 15 16 17 18 12 13 14 15 16 17 18

Power supply voltage Vcc (V)

0.4

Undervoltage hysterisis VH (V)

0.2

0

20 40 60 80 100 120 140

Junction temperature Tj (°C)

Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC

200

150

CH,TjH (°C)

100

50

Overheating protection TCOH,TjOH (°C)

OH hysterisis T

0

Power supply voltage Vcc (V)

6MBP75RA060 IGBT-IPM

Inverter

Collector current vs. Collector-Emitter voltage

150

100

50

Collector current Ic (A)

0

0 1 2 3 4

Tj=25°C

Collector-Emitter voltage VCE (V)

Switching time vs. Collector current

Edc=300V, Vcc=15V, Tj=25°C

1000

Collector current vs. Collector-Emitter voltage

150

100

50

Collector current Ic (A)

0

0 1 2 3 4

Collector-Emitter voltage VCE (V)

Tj=125°C

Switching time vs. Collector current

Edc=300V, Vcc=15V, Tj=125°C

1000

Switching time ton, toff (nsec.)

100

0 20 40 60 80 100 120

Collector current IC (A)

Forward current vs. Forward voltage

150

100

50

Forward current IF (A)

0

0 1 2 3 4

Foeward voltage VF (V)

Switching time ton, toff (nsec.)

100

0 20 40 60 80 100 120

Collector current IC (A)

Reverse recovery characteristics trr, Irr, vs. IF

100

10

Reverse recovery current Irr (A)

Reverse recovery time trr (nsec.)

0 20 40 60 80 100 120

Foeward current IF (A)

6MBP75RA060

Inverter

IGBT-IPM

Transient thermal resistance

1

0.1

Thermal resistance Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1

Pulse width Pw (sec.)

Power derating for IGBT (per device)

350

300

250

Reverse biased safe operating area

750

675

600

525

450

375

300

225

Collector current Ic (A)

150

75

0

0 100 200 300 400 500 600 700

Vcc=15V, Tj 125°C

Collector-Emitter voltage VCE (V)

<

=

Power derating for FWD (per device)

140

120

100

200

150

100

Collector power dissipation Pc (W)

50

0

0 20 40 60 80 100 120 140 160

Case temperature Tc (°C)

Switching loss vs. Collector current

10

8

6

4

2

Switching loss Eon,Eoff,Err (mJ/cycle)

Edc=300V, Vcc=15V, Tj=25°C

80

60

40

Collector power dissipation Pc (W)

20

0

0 20 40 60 80 100 120 140 160

Case temperature Tc (°C)

Switching loss vs. Collector current

10

8

6

4

2

Switching loss Eon,Eoff,Err (mJ/cycle)

Edc=300V, Vcc=15V, Tj=125°C

0

0 20 40 60 80 100 120

Collector current Ic (A)

0

0 20 40 60 80 100 120

Collector current Ic (A)

6MBP75RA060 IGBT-IPM

Overcurrent protection vs. Junction temperature

200

160

120

80

40

Overcurrent protection level Ioc (A)

0

0 20 40 60 80 100 120 140

Vcc=15V

Junction temperature Tj (°C)