Fuji Electric 6MBP50RA-120 Data Sheet

6MBP50RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900
1000
800
1200
50
100
50
357
150
20
Vz
1
Vcc
15
125
100
AC2.5

3.5 *6

3.5 *6

1200V / 50A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condtion Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=50A

-Ic=50A

– – 1.0 mA
– – 2.6 V
– – 3.0 V

6MBP50RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 75

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=50A, VDC=600V
toff
trr IF=50A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.35

- 0.85

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP50RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

6MBP50RA120

g

Characteristics (Representative)

Control Circuit

Power supply current vs. Switching frequency

40

35

30

25

20

15

10

Po we r s u p ply c urre n t : Icc (mA)

5

P-side
N-side

Tj=100°C

Vcc=17V

Vcc=15V

Vcc=13V

Vcc=17V
Vcc=15V
Vcc=13V

IGBT-IPM

Input signal threshold voltage

vs. Po w er su pp ly volta

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

e

Tj=25°C
Tj=125°C

} Vin(off)

} Vin(on)

0

0 5 10 15 20 25

S w itching fr e quency : fsw (kHz)

Under voltage vs. Junction temperature

14

12

10

8

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Unde r voltage hysterisis vs. Jnction tem perature

1

0.8

0.6

0.4

Under voltage hysterisis : VH (V)

0.2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm h old time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

Alarm hold time : tALM (mSec)

0.5

0

12 13 14 15 16 17 18

Tj=25°C

Pow er supply voltage : Vcc (V)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

OH hysterisis : TcH,TjH (°C)

50

Over heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V )

TcH,TjH

6MBP50RA120

Inverter

IGBT-IPM

C o llecto r c u rr e n t v s . C o l le c to r-Emitter vo l tage

Tj=25°C

80

70

60

50

40

30

Co llecto r C u rr e nt : Ic (A )

20

10

0

0 0 .5 1 1.5 2 2 .5 3

C ol le c t o r-Em itte r v oltage : Vce (V)

Vcc=17V

Switching time vs. Collector current

Edc=600V,Vcc=15V,Tj=25°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

Co llec to r cu rre nt v s. C o llec tor-E mitter voltage

Tj=125°C

80

70

60

50

40

30

Collec tor C u rrent : Ic (A )

20

10

0

0 0.5 1 1.5 2 2.5 3

Vcc= 17V

C o lle c t o r- E m itt e r v o lt age : V c e (V)

Switching time vs. Collector current

Edc=600V,Vcc=15V,Tj=125°C

10000

1000

Vcc= 15V

Vcc= 13V

toff

ton

100

tf

Switch in g t im e : ton,toff,tf (n Se c )

10

0 1020304050607080

Co llec tor cu rren t : Ic (A )

Forward current vs. Forward voltage

80

70

60

50

40

30

Forward C urrent : If (A)

20

10

0

0 0.5 1 1.5 2 2.5 3

Forward voltage : Vf (V)

125°C

25°C

100

Sw itchin g tim e : ton ,to ff,tf (nSe c)

10

0 1020304050607080

Collector current : Ic (A)

Re v ers e rec o ve ry c h a rac teris tics

trr,Irr vs. IF

1000

100

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

10

0 1020304050607080

F orwa r d c urr e n t : IF(A)

tf

trr12 5° C

trr25 °C

Irr12 5° C

Irr25 °C

6MBP50RA120

IGBT-IPM

Transient thermal resistance

1

0.1

Thermal resistance : R th(j-c) (°C/W )

0.01

0.001 0.01 0.1 1
P ulse w idth :Pw (sec)

Powe r derating for IGBT

(per device)

400

350

300

250

FW D

IGBT

Reversed biased safe operating area

Vcc=15V,Tj 125°C

700

600

500

400

SCSOA

300

C o lle c tor c u rre n t : Ic (A )

200

100

0

0 200 400 600 800 1000 1200 1400

(non-repetitive pulse)

RBSOA
(Rep etitive pulse)

C o lle c tor- E m itt e r v o ltag e : V c e ( V )

<
=

Power derating for FWD

(pe r d e vic e)

150

125

100

200

150

100

Collecter Power Dissipation : Pc (W)

50

0

0 20406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=25°C

25

20

15

10

5

Switching loss : Eon,Eoff,Err (m J/cycle)

0

0 1020304050607080

Colle c t or c u rren t : Ic ( A )

Eon

Eoff

Err

75

50

25

Collecter Power Dissipation : Pc (W)

0

0 20 40 6 0 80 100 120 140 160

Case Temp erature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V ,Vcc=15V ,Tj=125°C

25

20

15

10

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 1020304050 607080

Collec t or c u rre n t : Ic (A)

Eon

Eoff

Err

6MBP50RA120

Over current protection vs. Junction temperature

200

150

100

50

Over current protection level : Ioc(A)

0

0 20 40 60 80 100 120 140

Junction temperature : Tj(°C)

IGBT-IPM

Vcc=15V