6MBP50RA060
IGBT-IPM R series
Features
· T emperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
Duty=55.5%
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
Symbol Rating Unit
Min. Max.
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
0
0
200
0
-
-
-
-
0
0
0
-
-40
-20
-
-
-
450
500
400
600
50
100
50
198
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
600V / 50A 6 in one-package
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
ALM to terminal No. 16.
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
VCE=600V input terminal open
Ic=50A
-Ic=50A
– – 1.0 mA
– – 2.8 V
– – 3.0 V
6MBP50RA060
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
Iccp
ICCN
Vin(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C Fig.3
3
10
1.00
1.25
110
150
75
-
11.0
0.2
1.5
1425
-
-
1.35
1.60
8.0
20
20
10
-
2
1500
18
65
1.70
1.95
125
-
-
-
-
-
12.5
-
12
1575
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
Switching time (FWD)
ton IC=50A, VDC=300V
toff
trr IF=50A, VDC=300V
0.3 - -
- - 3.6
- - 0.4
µs
µs
µs
Definition of tsc
Thermal characteristics( Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
INV IGBT
FWD
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.63
- 1.33
0.05 -
°C/W
°C/W
°C/W
Recommendable value
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
VDC 200 - 400 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz
- 2.5 - 3.0 N·m
- 2.5 - 3.0 N·m
6MBP50RA060 IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP50RA060
Characteristics (Representative)
Control circuit
IGBT-IPM
Power supply current vs. Switching frequency
30
25
20
15
10
Power supply current Icc (mA)
5
0
0 5 10 15 20 25
Tj=100°C
Switching frequency fsw (kHz)
·········
Undervoltage vs. Junction temperature
14
12
10
8
N-side
P-side
Input signal threshold voltage
vs. Power supply voltage
2.5
2.0
1.5
1.0
ON), Vin (OFF), (V)
0.5
Input signal threshold voltage
Vin (
0
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
Undervoltage hysterisis vs. Junction temperature
1.0
0.8
0.6
·········
Tj=25°C
Tj=125°C
6
4
Undervoltage VUVT (V)
2
0
20 40 60 80 100 120 140
Junction temperature Tj (°C)
Alarm hold time vs. Power supply voltage
3.0
2.5
2.0
1.5
1.0
Alarm hold time tALM (msec.)
0.5
0
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
0.4
Undervoltage hysterisis VH (V)
0.2
0
20 40 60 80 100 120 140
Junction temperature Tj (°C)
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
200
150
CH,TjH (°C)
100
50
Overheating protection TCOH,TjOH (°C)
OH hysterisis T
0
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
6MBP50RA060 IGBT-IPM
Inverter
Collector current vs. Collector-Emitter voltage
100
80
60
40
Collector current Ic (A)
20
0
0 1 2 3 4
Tj=25°C
Collector-Emitter voltage VCE (V)
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
1000
Collector current vs. Collector-Emitter voltage
100
80
60
40
Collector current Ic (A)
20
0
0 1 2 3 4
Collector-Emitter voltage VCE (V)
Tj=125°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
1000
Switching time ton, toff (nsec.)
100
0 10 20 30 40 50 60 70 80
Collector current IC (A)
Forward current vs. Forward voltage
100
80
60
40
Forward current IF (A)
20
0
0 1 2 3 4
Foeward voltage VF (V)
Switching time ton, toff (nsec.)
100
0 10 20 30 40 50 60 70 80
Collector current IC (A)
Reverse recovery characteristics trr, Irr, vs. IF
100
10
Reverse recovery current Irr (A)
Reverse recovery time trr (nsec.)
0 10 20 30 40 50 60 70 80
Foeward current IF (A)
6MBP50RA060
Inverter
IGBT-IPM
Transient thermal resistance
1
0.1
Thermal resistance Rth(j-c) (°C/W)
0.01
0.001 0.01 0.1 1
Pulse width Pw (sec.)
Power derating for IGBT (per device)
200
150
Reverse biased safe operating area
500
450
400
350
300
250
200
150
Collector current Ic (A)
100
50
0
0 100 200 300 400 500 600 700
Vcc=15V, Tj 125°C
Collector-Emitter voltage VCE (V)
<
=
Power derating for FWD (per device)
100
80
100
50
Collector power dissipation Pc (W)
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
Switching loss vs. Collector current
7
6
5
4
3
2
Edc=300V, Vcc=15V, Tj=25°C
60
40
20
Collector power dissipation Pc (W)
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
Switching loss vs. Collector current
7
6
5
4
3
2
Edc=300V, Vcc=15V, Tj=125°C
1
Switching loss Eon,Eoff,Err (mJ/cycle)
0
0 10 20 30 40 50 60 70 80
Collector current Ic (A)
1
Switching loss Eon,Eoff,Err (mJ/cycle)
0
0 10 20 30 40 50 60 70 80
Collector current Ic (A)
6MBP50RA060 IGBT-IPM
Overcurrent protection vs. Junction temperature
120
100
80
60
40
20
Overcurrent protection level Ioc (A)
0
0 20 40 60 80 100 120 140
Vcc=15V
Junction temperature Tj (°C)
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