Fuji Electric 6MBP30VAA060-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBP30VAA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 30A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specied)
Items Symbol Min. Max. Units
Collector-Emitter Voltage (*1) V
Short Circuit Voltage V
DC I
Collector Current
1ms I
Duty=100% (*2) -I
Collector Power Dissipation 1 device (*3) P
Supply Voltage of Pre-Driver (*4) V
Input Signal Voltage (*5) V
Alarm Signal Voltage (*6) V
Alarm Signal Current (*7) I
Junction Temperature T
Operating Case Temperature T
Storage Temperature T
Solder Temperature (*8) T
Isolating Voltage (*9) V
Screw Torque Mounting (M4) - - 1.7 Nm
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: Duty=125ºC/ R
Note *3: P
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 11 and 10.
Note *5: V
Note *6: V
Note *7: I
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/6 0Hz sine wave 1minute.
C=125ºC/Rth(j-c) Q
in shall be applied to the input voltage bet ween terminal No.2 and 1, 5 and 4, 8 and 7, 12~14 and 10.
ALM shall be applied to the voltage between terminal No.15 and 10.
ALM shall be applied to the input current to terminal No.15.
th(j- c)D /(IF×VF Max.)×100
CES 0 600 V
SC 200 400 V
C - 30 A
c pulse - 60 A
C - 30 A
C - 137 W
CC -0.5 20 V
in -0.5 VCC+0.5 V
ALM -0.5 VCC V
ALM - 20 mA
j - 150 ºC
opr -20 110 ºC
stg -40 125 ºC
sol - 260 ºC
iso - AC2500 Vrms
1
1404a
JUNE 2015
6MBP30VAA060-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25ºC, VCC =15V unless otherwise specied)
Items Symbol Conditions Min. Typ. Max. Units
Collector Current at off signal input I
Collector-Emitter saturation voltage V
Inverter
Forward voltage of FWD V
Switching time
Supply current of P-side pre-driver (per one unit) I
Supply current of N-side pre-driver I
Input signal threshold voltage
Over Current Protection Level I
Over Current Protection Delay time t
Short Circuit Protection Delay time t
IGBT Chips Over Heating Protection Temperature Level T
Over Heating Protection Hysteresis T
Under Voltage Protection Level V
Under Voltage Protection Hysteresis V
Alarm Signal Hold Time
Resistance for current limit R
CES VCE=600V - - 1.0 mA
CE(sat) IC=30A
F IF=30A
t
on
t
off - - 2.1 µs
t
rr
ccp
ccn - - 23 mA
V
inth(on)
V
inth(off ) OFF 1.5 1.7 1.9 V
OC Tj=125ºC 45 - - A
dOC Tj=125ºC - 5 - µs
SC Tj=125ºC - 2 3 µs
jOH Surface of IGBT Chips 150 - - ºC
jH - 20 - ºC
UV 11.0 - 12.5 V
H 0.2 0.5 - V
t
ALM(OC)
t
ALM(UV ) VCC 10V 2.5 4.0 4.9 ms
t
ALM(Tj OH) 5.0 8.0 11.0 ms
ALM 960 1265 1570 Ω
VDC=300V, Tj=125ºC
IC=30A
VDC=300V
IF=30A
Switching Frequency= 0-15kHz
TC=-20~110ºC
Vin-GND
ALM-GND
TC=-20~110ºC
Terminal - - 1.9 V
Chip - 1.4 - V
Terminal - - 2.3 V
Chip - 1.8 - V
1.1 - - µs
- - 0.3 µs
- - 9 mA
ON 1.2 1.4 1.6 V
1.0 2.0 2.4 ms
Thermal Characteristics (TC = 25ºC)
Items Symbol Min. Typ. Max. Units
Junction to Case Thermal Resistance (*10) Inverter
IGBT R
FWD R
Case to Fin Thermal Resistance with Compound R
Note *10: For 1device, the measurement point of the case is just under the chip.
th(j- c)Q - - 0.91 °C/W
th(j- c)D - - 1.50 °C/W
th(c-f) - 0.05 - °C/W
Noise Immunity (VDC =300V, VCC=15V)
Items Conditions Min. Typ. Max. Units
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating
±2.0 - - kV
Recommended Operating Conditions
Items Symbol Min. Typ. Max. Units
DC Bus Voltage V
Power Supply Voltage of Pre-Driver V
Switching frequency of IPM f
Arm shoot through blocking time for IPM's input signal t
DC - - 400 V
CC 13.5 15.0 16.5 V
SW - - 20 kHz
dead 1.0 - - µs
Screw Torque (M4) - 1.3 - 1.7 Nm
Weight
Items Symbol Min. Typ. Max. Units
Weight W
t - 80 - g
2
6MBP30VAA060-50
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
Vcc
VinZ
VccV
GNDV
VccW
GNDW
Block Diagram
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
VccU
VinU
GNDU
VinV
VinW
VinX
P
Pre-Driver
U
Pre-Driver
V
Pre-Driver
W
VinY
ALM
Pre-Driver
R
ALM
N
3
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