Fuji Electric 6MBP30VAA060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBP30VAA060-50

IGBT Modules

IGBT MODULE (V series)
600V / 30A / IPM

Features

• Temperature protection provided by directly detecting

the junction temperature of the IGBTs

• Low power loss and soft switching

• Compatible with existing IPM-N series packages

• High performance and high reliability IGBT with overheating

protection

• Higher reliability because of a big decrease in number of

parts in built-in control circuit

Maximum Ratings and Characteristics

Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specied)

Items Symbol Min. Max. Units

Collector-Emitter Voltage (*1) V

Short Circuit Voltage V

DC I

Collector Current

1ms I

Duty=100% (*2) -I

Collector Power Dissipation 1 device (*3) P

Supply Voltage of Pre-Driver (*4) V

Input Signal Voltage (*5) V

Alarm Signal Voltage (*6) V

Alarm Signal Current (*7) I

Junction Temperature T

Operating Case Temperature T

Storage Temperature T

Solder Temperature (*8) T

Isolating Voltage (*9) V

Screw Torque Mounting (M4) - - 1.7 Nm

Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: Duty=125ºC/ R
Note *3: P
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 11 and 10.
Note *5: V
Note *6: V
Note *7: I
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/6 0Hz sine wave 1minute.

C=125ºC/Rth(j-c) Q

in shall be applied to the input voltage bet ween terminal No.2 and 1, 5 and 4, 8 and 7, 12~14 and 10.
ALM shall be applied to the voltage between terminal No.15 and 10.

ALM shall be applied to the input current to terminal No.15.

th(j- c)D /(IF×VF Max.)×100

CES 0 600 V

SC 200 400 V

C - 30 A

c pulse - 60 A

C - 30 A

C - 137 W

CC -0.5 20 V

in -0.5 VCC+0.5 V

ALM -0.5 VCC V

ALM - 20 mA

j - 150 ºC

opr -20 110 ºC

stg -40 125 ºC

sol - 260 ºC

iso - AC2500 Vrms

1

1404a

JUNE 2015

6MBP30VAA060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical Characteristics (Tj=25ºC, VCC =15V unless otherwise specied)

Items Symbol Conditions Min. Typ. Max. Units

Collector Current at off signal input I

Collector-Emitter saturation voltage V

Inverter

Forward voltage of FWD V

Switching time

Supply current of P-side pre-driver (per one unit) I

Supply current of N-side pre-driver I

Input signal threshold voltage

Over Current Protection Level I

Over Current Protection Delay time t

Short Circuit Protection Delay time t

IGBT Chips Over Heating Protection Temperature Level T

Over Heating Protection Hysteresis T

Under Voltage Protection Level V

Under Voltage Protection Hysteresis V

Alarm Signal Hold Time

Resistance for current limit R

CES VCE=600V - - 1.0 mA

CE(sat) IC=30A

F IF=30A

t

on

t

off - - 2.1 µs

t

rr

ccp

ccn - - 23 mA

V

inth(on)

V

inth(off ) OFF 1.5 1.7 1.9 V

OC Tj=125ºC 45 - - A

dOC Tj=125ºC - 5 - µs

SC Tj=125ºC - 2 3 µs

jOH Surface of IGBT Chips 150 - - ºC

jH - 20 - ºC

UV 11.0 - 12.5 V

H 0.2 0.5 - V

t

ALM(OC)

t

ALM(UV ) VCC 10V 2.5 4.0 4.9 ms

t

ALM(Tj OH) 5.0 8.0 11.0 ms

ALM 960 1265 1570 Ω

VDC=300V, Tj=125ºC
IC=30A

VDC=300V
IF=30A

Switching Frequency= 0-15kHz
TC=-20~110ºC

Vin-GND

ALM-GND
TC=-20~110ºC

Terminal - - 1.9 V

Chip - 1.4 - V

Terminal - - 2.3 V

Chip - 1.8 - V

1.1 - - µs

- - 0.3 µs

- - 9 mA

ON 1.2 1.4 1.6 V

1.0 2.0 2.4 ms

Thermal Characteristics (TC = 25ºC)

Items Symbol Min. Typ. Max. Units

Junction to Case Thermal Resistance (*10) Inverter

IGBT R

FWD R

Case to Fin Thermal Resistance with Compound R

Note *10: For 1device, the measurement point of the case is just under the chip.

th(j- c)Q - - 0.91 °C/W

th(j- c)D - - 1.50 °C/W

th(c-f) - 0.05 - °C/W

Noise Immunity (VDC =300V, VCC=15V)

Items Conditions Min. Typ. Max. Units

Common mode rectangular noise

Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating

±2.0 - - kV

Recommended Operating Conditions

Items Symbol Min. Typ. Max. Units

DC Bus Voltage V

Power Supply Voltage of Pre-Driver V

Switching frequency of IPM f

Arm shoot through blocking time for IPM's input signal t

DC - - 400 V

CC 13.5 15.0 16.5 V

SW - - 20 kHz

dead 1.0 - - µs

Screw Torque (M4) - 1.3 - 1.7 Nm

Weight

Items Symbol Min. Typ. Max. Units

Weight W

t - 80 - g

2

6MBP30VAA060-50

Pre-drivers include following functions

1. Amplifier for driver

2. Short circuit protection

3. Under voltage lockout circuit

4. Over current protection

5. IGBT chip over heating protection

Vcc

VinZ

VccV

GNDV

VccW

GNDW

Block Diagram

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

VccU

VinU

GNDU

VinV

VinW

VinX

P

Pre-Driver

U

Pre-Driver

V

Pre-Driver

W

VinY

ALM

Pre-Driver

R

ALM

N

3

6MBP30VAA060-50

5

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Power supply current vs. Switching frequency

T

j=25ºC (typ.)

40

3

N-side

35

30

25

20

15

10

Power supply current : ICC [mA]

5

0

0 5 10 15 20 25 12 13 14 15 16 17 18

P-side

Switchig frequency : f

SW [kHz]

V

CC=17V

V

CC=15V

V

CC=13V

V

CC=17V

V

CC=15V

V

CC=13V

2.5

2

1.5

inth (on), Vinth (off) [V]

1

V

Input signal threshold voltage :

0.5

0

Under voltage vs. Junction temperature (typ.)

15

1

Input signal threshold voltage

vs. Power supply boltage (typ.)

TC=25~125ºC

Power supply voltage : VCC [V]

Under voltage hysterisis

vs. Junction temperature (typ.)

V

V

inth (off)

inth (on)

12

9

6

Under voltage : VUV [V]Alarm hold time : TALM [msec]

3

0

0 20 40 60 80 100 120 140

Junction temperature : T

j [ºC]

Alarm hold time vs. Power supply voltage (typ.)

10

8

6

tALM(TjOH)

0.8

0.6

0.4

0.2

Under voltage hysterisis : VH [V]

0

0 20 40 60 80 100 120 140

Junction temperature : Tj [ºC]

Over heating characteristics

T

200

150

jH [ºC]

joH, TjH vs. VCC (typ.)

joH

T

4

2

0

12 13 14 15 16 17 18

Power supply voltage : V

tALM(OC)

CC [V]

Over heating protection : TjoH [ºC]

4

100

OH hysterisis : T

50

TjH

0

12 13 14 15 16 17 18

Power supply voltage : VCC [V]

6MBP30VAA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. collector-Emitter voltage

T

j=25ºC [Chip] (typ.)

60

50

V

40

30

20

CC=17V

V

CC=15V

Collector current : IC [A]

10

0

0 0.5 1 1.5 2 2.5

Collector-Emitter voltage : VCE [V]

Collector current vs. collector-Emitter voltage

T

60

j=125ºC [Chip] (typ.)

CC=13V

V

Collector current vs. collector-Emitter voltage

T

j=25ºC [Terminal] (typ.)

60

50

C [A]

40

30

20

VCC=17V

Collector current : I

10

0

0 0.5 1 1.5 2 2.5

Collector-Emitter voltage : V

Collector current vs. collector-Emitter voltage

j=125ºC [Terminal] (typ.)

60

T

CE [V]

CC=15V

V

V

CC=13V

50

40

30

20

VCC=17V

V

Collector current : IC [A]Forward current : IF [A]

10

0

0 0.5 1 1.5 2 2.5

Collector-Emitter voltage : V

CE [V]

Forward current vs. Forward voltage

[Chip] (typ.)

60

50

40

30

j=125ºC

T

CC=15V

V

Tj=25ºC

CC=13V

50

40

30

20

V

CC=17V

Collector current : IC [A]

10

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : VCE [V]

Forward current vs. Forward voltage

[Terminal] (typ.)

60

50

40

T

j=125ºC

30

V

CC=15V

V

CC=13V

T

j=25ºC

20

10

0

0 0.5 1 1.5 2 2.5

Forward voltage : V

F [V]

20

Forward current : IF [A]

10

0

0 0.5 1 1.5 2 2.5

Forward voltage : VF [V]

5

6MBP30VAA060-50

7

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching Loss vs. Collector Current (typ.)

V

DC=300V, VCC=15V, Tj=25ºC

4

3

2

1

Eon

Eoff

Switching loss : Eon, Eoff, Err [mJ/cycle]

Err

0

0 10 20 30 40 50 60

Collector Current : IC [A]

Reversed biased safe operating area

V

80

CC=15V, Tj  125ºC [Main Terminal] (min.)

Switching Loss vs. Collector Current (typ.)

V

DC=300V, VCC=15V, Tj=125ºC

4

3

Eon

2

on, Eoff, Err [mJ/cycle]

1

Switching loss : E

0

0 10 20 30 40 50 60

Collector Current : I

Eoff

E

rr

C [A]

Transient thermal resistance (max.)

10

60

40

Collector current : IC [A]Collector Power Dissipation : PC [W]

20

0

0 200 400 600 800

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : V

CE [V]

Power derating for IGBT (max.)

[per device]

200

150

100

1

Thermal resistance : Rth(j-c) [ºC/W]

0.1

0.001 0.01 0.1 1 10

Pulse width : PW [sec]

Power derating for FWD(max.)

[per device]

150

100

FWD

IGBT

50

0

0 50 100 150

Case Temperature : T

C [ºC]

50

Collector Power Dissipation : PC [W]

0

0 50 100 150

Case Temperature : TC [ºC]

6

6MBP30VAA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

V

10000

DC=300V, VCC=15V, Tj=25ºC

10000

ton

toff

1000

100

Switching time : ton, toff, tr [nsec]

10

0 10 20 30 40 50 60 0 10 20 30 40 50 60

tf

1000

100

Switching time : ton, toff, tr [nsec]

10

Switching time vs. Collector current (typ.)

V

DC=300V, VCC=15V, Tj=125ºC

t

toff

Collector current : IC [A]Collector current : IC [A]

Over current protection vs. Junction temperature

(typ. ) V

100

80

60

CC=15V

1000

rr [nsec]

100

Reverse recovery characteristics (typ.)

t

rr, Irr vs. If

t

t

rr Tj=125ºC

rr Tj=25ºC

on

tf

10

Reverse recovery current : Irr [A]

Reverse recovery time : t

1

0 10 20 30 40

Forward current : IF [A]

Outline Drawings, mm

I

rr Tj=125ºC

rr Tj=25ºC

I

40

20

Over current protection level : IOC [A]

0

0 20 40 60 80 100 120 140

Junction temperature : Tj [ºC]

Weight: 80g(typ.)

7

6MBP30VAA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual proper ty right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other 's intellectual proper ty rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become fault y. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduc ed in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliabilit y than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain pr ior approval. W hen using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incor porated in the equipment
becomes faulty.

• Transportation equipment (mounted on car s and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devic es

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduc ed in any form or by any means without the express per mission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

8

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Information

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1

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2

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3

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4

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5

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6

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8

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10

改廃のお知らせ

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1

Semiconductors General Catalog

2

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3

Application Manuals

4

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5

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6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
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半导体综合目录

2

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3

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4

技术资料

5

安装说明书

6

IGBT 损耗模拟软件

7

AT-NPC 3-Level 损耗模拟软件

8

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2015-10