Fuji Electric 6MBP300RA-060 Data Sheet

6MBP300RA060

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
Duty=55.5%
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

450

500
400
600
300
600
300
1040
150
20
Vz
1
Vcc
15
125
100
AC2.5

3.5 *6

3.5 *6

600V / 300A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=600V input terminal open
Ic=300A

-Ic=300A

– – 1.0 mA
– – 2.8 V
– – 3.0 V

6MBP300RA060

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm

*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

6
18

1.00

1.70

­ 110

­ 150

­ 450

-

11.0

0.2

1.5

­1425

-

-

1.35

2.05

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

32
96

1.70

2.40

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=300A, VDC=300V
toff
trr IF=300A, VDC=300V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.12

- 0.25

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 400 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP300RA060 IGBT-IPM

Block diagram

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

6MBP300RA060

y

j

)

Characteristics (Representative)

Control circuit

IGBT-IPM

Power supply current vs. Switchi ng frequency

Tj=100°C

100

P-side
N-side

80

60

40

20

Power supply current : Icc (mA)

0

0 5 10 15 20 25

Switching frequency : fsw (kHz)

Under volt age vs. Junction temperature

14

12

10

8

Vcc=17V
Vcc=15V

Vcc=13V

Vcc=17V
Vcc=15V

Vcc=13V

Input signal threshold voltage

vs. Power suppl

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

voltage

Under voltage hysterisis vs. Jnction temperature

1

0.8

0.6

Tj=25°C

T

=125°C

} Vin(off)

} Vin(on)

6

4

Under voltage : V U VT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C

Alarm hold time vs. Power supply voltage

3

2.5
Tj= 125 °C

2

1.5

1

Alarm hold time : tALM (mSec)

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vc c ( V )

Tj=25°C

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

OH hysterisis : TcH,TjH (°C)

50

Over heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

TcH,TjH

6MBP300RA060 IGBT-IPM

Inverter

Collector current vs. Collector-Emitter voltage

Tj=25°C

500

400

300

200

Collector Current : Ic (A)

100

0

0 0.5 1 1.5 2 2.5 3 3.5

Collector-Emitter voltage : Vce (V)

Vcc=17V

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=25°C

10000

1000

Vcc=15V

toff

ton

Vcc=13V

C olle c to r c u rr e nt v s . Colle c to r- E mitte r v o ltag e

Tj=125°C

500

400

300

200

C ollec to r C u rre nt : Ic (A )
100

0

0 0 .5 1 1 .5 2 2 .5 3 3.5

C o llec tor-Em itte r v oltage : Vce (V)

Vcc= 17V

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=125°C

10000

toff

1000

Vcc= 15V

Vcc= 13V

ton

100

Switching time : ton,toff,tf (nSec)

10

0 100 200 300 400 500

Collector current : Ic (A)

Forward current vs. Forward v oltage

500

400

300

200

Forward Current : If (A)

100

125°C

tf

tf

100

Switching tim e : ton,toff,tf (nSec)

10

0 100 200 300 400 500

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs. IF

1000

25°C

100

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

trr125°C

trr25°C

Irr125°C

Irr25°C

0

0 0.5 1 1.5 2 2.5 3

Forward voltage : Vf (V)

10

0 100 200 300 400 500

Forward current : IF( A)

6MBP300RA060

IGBT-IPM

Transient thermal resistance

1

0.1

0.01

Thermal resistance : Rth(j-c) (°C/W)

0.001

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for IGBT

(per device)

1200

1000

FWD

IGBT

Reversed biased safe operating area

3000

Vcc=15V,Tj 125°C

2700
2400
2100
1800
1500
1200

900

Collector current : Ic (A)

600
300

0

0 100 200 300 400 500 600 700

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitive pulse)

Collector-Emitter volt age : Vce (V)

<

=

Power derating for FWD

(per device)

600

500

800

600

400

200

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Case T emperature : T c (°C)

Sw itching Loss vs. Collector Current

Edc=300V,Vcc=15V,Tj=25°C

20

15

10

Eon

400

300

200

100

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Cas e Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=300V,Vcc=15V,Tj=125°C

20

15

10

Eon

Eoff

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200 250 300

Collector current : Ic (A)

Eoff

Err

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200 250 300

Collector current : Ic (A)

Err

6MBP300RA060 IGBT-IPM

Over current protection vs. Junction temperature

1200

1000

800

600

400

200

Over current protection level : Ioc(A)

0

0 20406080100120140

Junction temperature : Tj(°C)

Vcc=15V