Fuji Electric 6MBP25RA-120 Data Sheet

6MBP25RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900

1000
800
1200
25
50
25
198
150
20
Vz
1
Vcc
15
125
100
AC2.5

3.5 *6

3.5 *6

1200V / 25A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condtion Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=25A

-Ic=25A

– – 1.0 mA
– – 2.6 V
– – 3.0 V

6MBP25RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 38

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=25A, VDC=600V
toff
trr IF=25A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.63

- 1.33

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP25RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

6MBP25RA120

Characteristics (Representative)

Control Circuit

IGBT-IPM

Power supply current vs. Switching frequency

Tj=100°C

30

P-side

25

20

15

10

5

P ow e r s u pply c u rre n t : Icc (mA )

0

0 5 10 15 20 25

N-side

Switching frequency : fs w (k Hz)

Under voltage vs. Junction temperature

14

12

10

8

Vcc=17V
Vcc=15V

Vcc=13V

Vcc=17V
Vcc=15V

Vcc=13V

Inp ut sig n a l th r esho ld v o lta ge

vs. Power su pply volta ge

2.5

2

1.5

1

: Vin(on ),V in(o ff) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Under voltage hysterisis vs. Jnction temperature

1

0.8

0.6

Tj=25• •
Tj=125• •

} Vin(off)

} Vin(on)

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

0.5

Ala rm ho ld time : tALM (m S e c )

0

12 13 14 15 16 17 18

Power supply voltage : V cc (V)

Tj=25°C

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over he ating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

50

OH hysterisis : TcH,TjH (°C)

Ov er heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Po w er s upp ly voltage : Vcc (V)

TcH,TjH

6MBP25RA120

Inverter

IGBT-IPM

Collector current vs. Collector-Emitter voltage

Tj=25°C

40

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Collector-Emitter voltage : Vce (V)

Sw itchin g time vs. C o llec to r c urren t

Edc=600V,Vcc=15V,Tj=25°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

C o llector c u rr en t v s . Colle c to r-Em itte r v o lta g e

Tj=125°C

40

35

30

25

20

15

C ollector C u rre n t : Ic (A )

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Collector-Emitter voltage : Vce (V)

S w itc h in g time v s . C o lle c to r cur re n t

Edc=6 00V,Vcc=15V,Tj=125°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

100

Switch in g tim e : ton ,t o ff,tf (n S e c )

10

0 5 10 15 20 25 30 35 40

Co llec tor cu rre nt : Ic (A )

Forward current vs. Forward voltage

40

35

30

25

20

15

Forward Current : If (A)

10

5

125°C

tf

tf

100

Switch in g tim e : ton , to ff,tf (n S ec)

10

0 5 10 15 20 25 30 35 40

C o llector c u r re nt : Ic ( A )

Reverse recovery characteristics

trr,Irr vs . IF

1000

25°C

100

10

Re vers e rec ov ery c urren t : Irr(A)

R ev e rs e re c o ve r y tim e : trr(n S ec)

trr12 5 °C

trr2 5°C

Irr125°C

Irr2 5° C

0

00.511.522.53

Forward voltage : Vf (V)

1

0 5 10 15 20 25 30 35 40

F o rward curr e nt : IF ( A )

6MBP25RA120

IGBT-IPM

Tra n sient the rm al re sis tanc e

10

1

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1

Pu lse width :Pw (sec)

P ow e r d era ting fo r IG BT

(p e r de v ic e )

250

200

FW D

IGBT

Reversed biased safe operating area

Vcc=15V,Tj 125°C

350

300

250

200

SCSOA

150

100

Collector current : Ic (A)

50

0

0 200 400 600 800 1000 1200 1400

(non-repetitive pulse)

RBSOA
(Repetitive pulse)

<
=

Collector-Emitter voltage : Vce (V)

Power derating for F W D

(per device)

100

80

150

100

50

Collecter Power Dissipation : Pc (W )

0

0 20 40 60 80 100 1 20 140 1 60

Ca se Tem perature : Tc (°C)

S w it c hing L os s v s . Co lle cto r Cur rent

Edc=600 V,Vcc=15V,Tj=25 °C

12

10

8

6

4

2

Switching loss : Eo n,Eoff,Err (m J/cycle)

0

0 5 10 15 20 25 30 35 40

C o llec t or c u rre n t : Ic (A )

Eon

Eoff

Err

60

40

20

C ollec te r P ower D iss ipatio n : P c (W )

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=125°C

12

10

8

6

4

2

Sw itc h in g lo s s : Eon , Eoff,Err (m J /c y c le)

0

0 5 10 15 20 25 30 35 40

Co lle c to r c u rre nt : Ic (A )

Eon

Eoff

Err

6MBP25RA120

Ov e r c u r ren t pro tection v s . Ju n ctio n temp e r a ture

100

80

60

40

20

Ove r cu rre nt prot ec tion lev e l : Ioc(A )

0

0 20406080100120140

IGBT-IPM

Vcc=15V

Junction temperature : Tj(°C)