Fuji Electric 6MBP20XSD060-50, 6MBP15XSD060-50, 6MBP15XSF060-50, 6MBP20XSF060-50, 6MBP30XSD060-50 Applications Manual

Fuji IGBT Intelligent-Power-Module

“Small-IPM"

Application Manual

6MBP15XS*060-50
6MBP20XS*060-50
6MBP30XS*060-50
6MBP35XS*060-50

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
Dec.-2016

Fuji Electric Co., Ltd.

Dec. 2016

CONTENTS

Chapter 1 Product Outline

1. Introduction .......................................................................................... 1-2

2. Product line-up ..................................................................................... 1-4

3. Definition of Type Name and Marking Spec.......................................... 1-5

4. Package outline dimensions.................................................................. 1-6

5. Absolute Maximum Ratings ................................................................. 1-7

Chapter 2 Description of Terminal Symbols and Terminology

1. Description of Terminal Symbols ........................................................ 2-2

2. Description of Terminology ................................................................. 2-3

Chapter 3 Detail of Signal Input/Output Terminals

1. Control Power Supply Terminals V

2. Power Supply Terminals of High Side VB(U,V,W) .............................. 3-6

3. Function of Internal BSDs (Boot Strap Diodes) ................................... 3-9

4. Input Terminals IN(HU,HV,HW), IN(LU,LV,LW) .................................. 3-13

5. Over Current Protection Input IS ......................................................... 3-16

6. Fault Status Output VFO ..................................................................... 3-17

7. Linear Temperature Sensor Output TEMP .......................................... 3-18

8. Over Heat Protection ........................................................................... 3-20

Chapter 4 Power Terminals

1. Connection of Bus Input terminal and Low Side Emitters .................... 4-2

2. Setting of Shunt Resistor of Over Current Protection .......................... 4-3

Chapter 5 Recommended wiring and layout

1. Examples of Application Circuits.......................................................... 5-2

2. Recommendation and Precautions in PCB design ............................. 5-5

Chapter 6 Mounting Guideline and Thermal Design

1. Soldering to PCB ................................................................................. 6-2

2. Mounting to Heat sink .......................................................................... 6-3

3. Cooler (Heat Sink) Selection................................................................ 6-4

Chapter 7 Cautions

1. Other warnings and precautions ......................................................... 7-2

2. Handling and storage precautions ...................................................... 7-2

3. Notice .................................................................................................. 7-3

CCH,VCCL

,COM .............................. 3-2

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
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Chapter 1

Product Outline

Contents Page

1. Introduction .................... .......................................................................... 1-2

2. Product line-up ......................................................................................... 1-4

3. Definition of type name and marking spec .............................................. 1-5

4. Package outline dimensions .................................................................... 1-6

5. Absolute maximum ratings ...................................................................... 1-7

Fuji Electric Co., Ltd.

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1-1

Chapter 1 Product Outline

VB(U)

11

10

9

5

3

21

20

19

18

17

16

15

14

13

12

22

23

24

26

28

30

36

32UP

V

W

N(V)

N(U)

N(W)

Vcc

IN

GND

OUT

Vs

Vcc

U

IN

V

IN

W

IN

U

OUT

V

OUT

W

OUT

Fo
IS
GND

VFO
IS
COM

COM

IN(LU)
IN(LV)
IN(LW)
V

CCL

V

CCH

IN(HU)

IN(HV)

IN(HW)

VB(V)
VB(W)

TEMP

NC

V

B

7

TEMP

Vcc

IN

GND

OUT

Vs

V

B

Vcc

IN

GND

OUT

Vs

V

B

3×HVIC

LVIC

3×BSD

6×IGBT 6×FWD

1. Introduction

The objective of this document is introducing Fuji IGBT Intelligent-Power-Module “Small-IPM”.
At first, the product outline of this module is described.
Secondary, the terminal symbol and terminology used in this note and the specification sheet are
explained. Next, the design guideline on signal input terminals and power terminals are shown using its
structure and behavior. Furthermore, recommended wiring and layout, and the mount guideline are given.

Feature and functions

1.1 Product concept

• 7th gen. IGBT technology offers high-efficiency and energy-saving operation.

• Guarantee T

• Higher accuracy of short circuit detection contribute to expanding over load operating area.

• Compatible pin assignment, foot print size and mounting dimensions as the 1st gen. Small IPM series.

• Product range: 15A – 35A / 600V.

• The total dissipation loss has been improved by improvement of the trade-off between the Collector-

Emitter saturation voltage V

1.2 Built-in drive circuit

• Drives the IGBT under optimal conditions.

• The control IC of upper side arms have a built-in high voltage level shift circuit (HVIC).

• This IPM is possible for driven directly by a microprocessor. Of course, the upper side arm can also

be driven directly. The voltage level of input signal is 3.3V or 5V.

• Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the
drive circuit is low, no reverse bias DC source is required.

• This IPM device requires four control power sources. One is a power supply for the lower side IGBTs
and control ICs. The other three power supplies are power supplies for the upper side IGBTs with
proper circuit isolation.
The IPM doesn’t need insulated power supplies for the upper side drive because the IPM has built-in
bootstrap diodes (BSD).

j(ope)

=150℃

and switching loss.

CE(sat)

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Fig. 1-1 Block Diagram of Internal Circuit

1-2

Chapter 1 Product Outline

FWDIGBT

WIREIC

Mold resin

Lead frame

BSD

Aluminum base PCB with isolation layer

Mold resin

FWDIGBT

WIREIC

Mold resin

Lead frame

BSD

Aluminum base PCB with isolation layer

Mold resin

1.3 Built-in protection circuits

• The following built-in protection circuits are incorporated in the IPM device:
(OC): Over current protection
(UV): Under voltage protection for power supplies of control IC
(LT) or (OH): Temperature sensor output function or Overheating protection
(FO): Fault alarm signal output

• The OC protection circuits protect the IGBT against over current, load short-circuit or arm short-circuit.

The protection circuit monitors the emitter current using external shunt resistor in each lower side IGBT
and thus it can protect the IGBT against arm short-circuit.

• The UV protection circuit is integrated into all of the IGBT drive circuits and control power supply. This

protection function is effective for a voltage drop of all of the high side drive circuits and the control
power supply.

• The OH protection circuit protects the IPM from overheating. The OH protection circuit is built into the

control IC of the lower side arm (LVIC).

• The temperature sensor output function enables to output measured temperature as an analog voltage

(built in LVIC)

• The FO function outputs a fault signal, making it possible to shut down the system reliably by outputting

the fault signal to a microprocessor unit which controls the IPM when the circuit detects abnormal
conditions.

1.4 Compact package

•The package of this product includes with an aluminum base, which further improves the heat radiation.

•The control input terminals have a shrink pitch of 1.778mm (70mil).

•The power terminals have a standard pitch of 2.54mm (100mil).

Fig.1-2 Package overview

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MT6M12343 Rev.1.0
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Fig.1-3 Package cross section diagram

1-3

Chapter 1 Product Outline

2. Product line-up and applicable products for this manual

Table. 1-1 Line-up

Rating of IGBT

Type name

6MBP15XSD060-50 600

6MBP15XSF060-50 LT*1

Voltage

[V]

Current

[A]
15 1500Vrms

Sinusoidal 60Hz, 1min.

(Between shorted all terminals and case)

Isolation Voltage

[Vrms]

Variation Target application

*1

LT

OH

6MBP20XSD060-50 20 LT

*1

6MBP20XSF060-50 LT*1

OH

6MBP30XSD060-50 30 LT*1

6MBP30XSF060-50 LT

*1

OH*1

6MBP35XSD060-50 35 LT*1

6MBP35XSF060-50 LT

*1

OH*1

*1

*1

・Room air conditioner

compressor drive

・Heat pump

applications

・Fan motor drive
・General motor drive
・Servo drive

*1 (LT): Temperature sensor output function (LT)
(OH): Overheating protection function (OH)

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Chapter 1 Product Outline

A1 A2

6MBP15XSD060-50 L D

6MBP15XSF060-50 L F

6MBP20XSD060-50 M D

6MBP20XSF060-50 M F

6MBP30XSD060-50 O D

6MBP30XSF060-50 O F

6MBP35XSD060-50 P D

6MBP35XSF060-50 P F

TYPE NAME

PRODUCT CODE

3. Definition of Type Name and Marking Spec.

• Type name

6 MBP 20 X S D 060 –50

Additional model number (Option)
50 : RoHS

Voltage rating
060 : 600V

Additional number of series
D : Temperature sensor output
F : Temperature sensor output and Over heating protection

Series name

S: Package type
Series name

X: Chip generation
IGBT current rating

15: 15A, 20: 20A, 30: 30A, 35: 35A
Indicates IGBT-IPM
Number of switch elements

6 : 6-chip circuit of three phase bridge

A

Trademark

1

Type Name

Y

6MBP20XSD
060-50

M

DATE CODE & Serial number

YMNNNN
Y : Year (0 to 9)
M : Month (1 to 9 and O, N, D)
NNNN : Serial number

Products code

A

2

Country of Origin mark

“” (Bank) : Japan
P : Philippine

P

270001

Year Code (0 to 9)

Month Code (1 to 9 and O, N, D)

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
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Fig.1-4 Marking Specification

1-5

Chapter 1 Product Outline

A

DETAIL A

14.13

14x2.54 (=35.56)

13.0

3.50(min.)

43.0

35.0

26.0

18x1.778(=32.004)

±0.5

±0.3

±0.5

4.2

1.6 ±0.1
±0.1

3.2

±0.1

14.0

14.7

29.4

±0.5

±0.5

±0.5

1.8

1.5

3.7

±0.1

±0.1

0

.

40

10.6

±0.1

1.8

±0.1

2.5(min)

(1.2 )

(0.6)

8.96

15.56

3579101112131415161718192021

22 23 24 26 28 30 32 36

±0.1

0.98(min.)

Note.1
The IMS　(Insulated Metal Substrate) deliberately protruded from back surface of case.
It is improved of thermal conductivity between IMS and heat-sink.

4.76 ±0.3

15.56

±0.3

※ Note.1

Solder Plating

5.63

±0.25

0.7 ±0.4

±0.3

8.58(min.)

3.50(min.)

13.0

30.4

±0.3

±0.3

±0.3

Insulated Metal
Substrate

2.54

±0.2

1.778±0.2

B

±0

.

1

0

.

40

±

0

.

1

D

Insulated Metal
Substrate

DETAIL B

DETAIL C

DETAIL D

C

0.6

0.9

0.6

1.2

2.5(min)

3.50(min.)

±0.1

±0.1

±0.1
±0.1

±0.5

±0.5

3.83

2.6

±0.1

0.13±0.13

Unit: mm

4. Package outline dimensions

Pin No. Pin Name

3 VB(U)
5 VB(V)
7 VB(W)

9 IN(HU)
10 IN(HV)
11 IN(HW)
12 V
13 COM
14 IN(LU)
15 IN(LV)
16 IN(LW)
17 V
18 VFO
19 IS
20 COM
21 Temp

CCH

CCL

Pin No. Pin Name

22 N(W)
23 N(V)
24 N(U)
26 W
28 V
30 U
32 P
36 NC

Fig.1-5. Case outline drawings

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Chapter 1 Product Outline

5. Absolute Maximum Ratings

An example of the absolute maximum ratings of 6MBP20XSD060-50 is shown in Table 1-2.

Table 1-2 Absolute Maximum Ratings at Tj=25C,Vcc=15V (unless otherwise specified)

Item Symbol Rating Unit Description

DC bus Voltage V

Bus Voltage (Surge) V

Collector-Emitter Voltage V

Collector Current I

Peak Collector Current I

Diode Forward Current I

Peak Diode Forward Current I

Collector Power Dissipation P

FWD Power Dissipation P

DC

DC(Surge)

CES

C@25

CP@25

F@25

FP@25

D_IGBT

D_FWD

450 V

500 V

600 V

20

40

A

A

20 A

40 A

41.0 W

27.8 W

DC voltage that can be applied between
P-N(U),N(V),N(W) terminals

Peak value of the surge voltage that can be
applied between P-N(U),N(V),N(W)
terminals during switching operation

Maximum collector-emitter voltage of the
built-in IGBT chip and repeated peak
reverse voltage of the FWD chip

Maximum collector current for the IGBT chip

Tc=25C, Tj=150C

Maximum pulse collector current for the
IGBT chip Tc=25C, Tj=150C

Maximum forward current for the FWD chip

Tc=25C, Tj=150C

Maximum pulse forward current for the
FWD chip Tc=25C, Tj=150C

Maximum power dissipation for one IGBT
element at Tc=25C, Tj=150C

Maximum power dissipation for one FWD
element at Tc=25C, Tj=150C

Maximum Junction Temperature
of Inverter Block

Operating Junction Temperature
of Inverter Block

T

T

j(max)

jOP

+150

-40 ~ +150

Maximum junction temperature of the IGBT

C



chips and the FWD chips

Junction temperature of the IGBT and FWD

C



chips during continuous operation

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Chapter 1 Product Outline

Table 1-2 Absolute Maximum Ratings at Tj=25C,Vcc=15V (Continued)

Item Symbol Rating Unit Descriptions

High-side Supply Voltage V

Low-side Supply Voltage V

High-side Bias Supply Voltage

High-side Bias Voltage for IGBT
Gate Driving

Input Signal Voltage V

Input Signal Current I

Fault Signal Voltage V

Fault Signal Current I

Over Current Sensing
Input Voltage

CCH

CCL

V

B(U)-COM

V

B(V)-COM

V

B(W)-COM

V

B(U)

V

B(V)

V

B(W)

IN

IN

FO

FO

V

IS

-0.5 ~ 20 V

-0.5 ~ 20 V

Voltage that can be applied between COM
and V

terminal

CCH

Voltage that can be applied between COM
and V

terminal

CCL

Voltage that can be applied between VB(U)

-0.5 ~ 620 V

terminal and COM, VB(V) terminal and
COM,VB(W) terminal and COM.

20 V

Voltage that can be applied between U
terminal and VB(U) terminal , V terminal and
VB(V) terminal , W terminal and VB(W)
terminal.

-0.5 ~ V

-0.5 ~ V

-0.5 ~ V

-0.5 ~ V

+0.5

CCH

CCL

+0.5

V

3 mA

+0.5 V

CCL

1 mA

+0.5 V

CCL

Voltage that can be applied between COM
and each IN terminal

Maximum input current that flows from IN
terminal to COM

Voltage that can be applied between COM
and VFO terminal

Sink current that flows from VFO to COM
terminal

Voltage that can be applied between IS and
COM terminal

Maximum Junction Temperature
of Control Circuit Block

Operating Case Temperature T

Storage Temperature T

Isolation Voltage V

T

j

+150

Maximum junction temperature of the

C



control circuit block

Operating case temperature (temperature of

c

-40 ~ +125

C

the aluminum plate directly under the IGBT



or the FWD)

Range of ambient temperature for storage

stg

-40 ~ +125

C

or transportation, when there is no electrical



load

Maximum effective value of the sine-wave

iso

AC 1500 Vrms

voltage between the terminals and the heat
sink, when all terminals are shorted
simultaneously. (Sine wave = 60Hz / 1min)

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Chapter 1 Product Outline

The Collector Emitter Voltages specified in absolute maximum rating

The absolute maximum rating of collector-emitter voltage of the IGBT is specified below.
During operation of the IPM, the voltage between P and N(*) is usually applied to one phase of upper or

lower side IGBT. Therefore, the voltage applied between P and N(*) must not exceed absolute maximum
ratings of IGBT. The Collector-Emitter voltages specified in absolute maximum rating are described below.

N(*): N(U),N(V),N(W)

V

CES

V

DC

V

DC(Surge)

:Absolute Maximum rating of IGBT Collector Emitter Voltage.
:DC bus voltage Applied between P and N(*).
:The total of DC bus voltage and surge voltage which generated by the wiring

(or pattern) inductance from P-N(*) terminal to the bulk capacitor.

≤ VDC(Surge)

Collector-Emitter Current

≤ VDC(Surge)

≤ VDC

≤ VDC

VCE,IC=0

(a) In Turn-off Switching (b) In Short-circuit

Short-circuit Current

VCE,IC=0

Fig. 1-6 The Collector- Emitter voltages to be considered.

Fig. 1-6 shows an example waveforms of turn-off and short-circuit of the IPM. The V

DC(surge)

is different in

the each situation, therefore, VDC should be set considering these situation.

V

represents the absolute maximum rating of IGBT Collector-Emitter voltage. And V

CES

DC(Surge)

is specified
considering the margin of the surge voltage which is generated by the wiring inductance in this IPM.
Furthermore, VDC is specified considering the margin of the surge voltage which is generated by the wiring
(or pattern) stray inductance between the P-N(*) terminal and the capacitor.

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Chapter 2

Description of Terminal Symbols and Terminology

Contents Page

1. Description of Terminal Symbols ....................................................... 2-2

2. Description of Terminology ................................................................ 2-3

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2-1

Chapter 2

Description of Terminal Symbols and Terminology

1. Description of Terminal Symbols

Table 2-1 and 2-2 show the description of terminal symbols and terminology respectively.

Table 2-1 Description of Terminal Symbols

Pin No. Pin Name Pin Description

3 VB(U) High side bias voltage for U-phase IGBT driving
5 VB(V) High side bias voltage for V-phase IGBT driving
7 VB(W) High side bias voltage for W-phase IGBT driving

9 IN(HU) Signal input for high side U-phase
10 IN(HV) Signal input for high side V-phase
11 IN(HW) Signal input for high side W-phase
12 V

CCH

High side control supply
13 COM Common supply ground
14 IN(LU) Signal input for low side U-phase
15 IN(LV) Signal input for low side V-phase
16 IN(LW) Signal input for low side W-phase
17 V

CCL

Low side control supply
18 VFO Fault output
19 IS Over current sensing voltage input
20 COM Common supply ground
21 TEMP Temperature sensor output
22 N(W) Negative bus voltage input for W-phase
23 N(V) Negative bus voltage input for V-phase
24 N(U) Negative bus voltage input for U-phase
26 W Motor W-phase output
28 V Motor V-phase output
30 U Motor U-phase output
32 P Positive bus voltage input
36 NC No Connection

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2-2

Chapter 2

Description of Terminal Symbols and Terminology

2. Description of Terminology

Table 2-2 Description of Terminology

(1) Inverter block

Item Symbol Description

Zero gate Voltage Collector
current

Collector-emitter saturation
voltage

FWD
forward voltage drop

Turn-on time t

Turn-on delay t

Turn-on rise time t

VCE-IC Cross time of turn-on t

Turn-off time t

Turn-off delay t

Turn-on fall time t

I

CES

V

CE(sat)

V

F

on

d(on)

r

c(on)

off

d(off)

f

Collector current when a specified voltage is applied between the collector and
emitter of an IGBT with all input signals L (=0V)

Collector-emitter voltage at a specified collector current when the input signal of
only the element to be measured is H (= 5V) and the inputs of all other elements
are L (=0V)

Forward voltage at a specified forward current with all input signals L (=0V)

The time from the input signal rising above the threshold value until the collector
current becomes 90% of the rating. See Fig. 2-1.

The time from the input signal rising above the threshold value until the collector
current decreases to 10% of the rating. See Fig. 2-1.

The time from the collector current becoming 10% at the time of IGBT turn-on
until the collector current becomes 90%. See Fig. 2-1.

The time from the collector current becoming 10% at the time of IGBT turn-on
until the VCE voltage of IGBT dropping below 10% of the rating. See Fig. 2-1.

The time from the input signal dropping below the threshold value until the VCE
voltage of IGBT becomes 90% of the rating. See Fig. 2-1.

The time from the input signal dropping below the threshold value until the
collector current decreases to 90%. See Fig. 2-1.

The time from the collector current becoming 90% at the time of IGBT turn-off
until the collector current decreases to 10%. See Fig. 2-1.

VCE-IC Cross time of turn-off t

FWD
Reverse recovery time

c(off)

t

rr

The time from the VCE voltage becoming 10% at the time of IGBT turn-off until
the collector current dropping below 10% of the rating. See Fig. 2-1.

The time required for the reverse recovery current of the built-in diode to
disappear. See Fig. 2-1.

(2) Control circuit block

Item Symbol Description

Circuit current of
Low-side drive IC

Circuit current of
High-side drive IC

Circuit current of Bootstrap
circuit

Input Signal threshold
voltage

Input Signal threshold
hysteresis voltage

Operational input pulse
width

I

CCL

I

CCH

I

CCHB

V

th(on)

V

th(off)

V

th(hys)

t

IN(on)

Current flowing between control power supply V

Current flowing between control power supply V

Current flowing between upper side IGBT bias voltage supply VB(U) and
U,VB(V) and V or VB(W) and W on the P-side (per one unit)

Control signal voltage when IGBT changes from OFF to ON

Control signal voltage when IGBT changes from ON to OFF

The hysteresis voltage between V

Control signal pulse width necessary to change IGBT from OFF to ON.
Refer Chapter 3 section 4.

th(on)

and V

th(off)

and COM

CCL

and COM

CCH

.

Operational input pulse
width

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t

IN(off)

Control signal pulse width necessary to change IGBT from ON to OFF.
Refer Chapter 3 section 4.

2-3

Chapter 2

Description of Terminal Symbols and Terminology

Table 2-2 Description of Terminology

(2) Control circuit block (Continued)

Item Symbol Description

Input current I

Input pull-down resistance R

Fault output voltage

Fault output pulse width t

Over current protection
voltage level

Over Current Protection
Trip delay time

Output Voltage of
temperature sensor

Overheating protection
temperature

Overheating protection
hysteresis

Vcc Under voltage trip level of
Low-side

Vcc Under voltage reset level
of Low-side

IN

IN

V

FO(H)

V

FO(L)

FO

V

IS(ref)

t

d(IS)

V

(temp)

T

OH

T

OH(hys)

V

CCL(OFF)

V

CCL(ON)

Current flowing between signal input IN(HU,HV,HW,LU,LV,LW) and COM.

Input resistance of resistor in input terminals IN(HU,HV,HW,LU,LV,LW).
They are inserted between each input terminal and COM.

Output voltage level of VFO terminal under the normal operation (The lower side arm
protection function is not actuated.) with pull-up resistor 10k

W.

Output voltage level of VFO terminal after the lower side arm protection function is
actuated.

Period in which an fault status continues to be output (VFO) from the VFO terminal
after the lower side arm protection function is actuated. Refer chapter 3 section 6.

Threshold voltage of IS terminal at the over current protection.
Refer chapter 3 section 5.

The time from the Over current protection triggered until the collector current
becomes 50% of the rating. Refer chapter 3 section 5.

The output voltage of temp. It is applied to the temperature sensor output model.
Refer chapter 3 section 7.

Tripping temperature of over heating. The temperature is observed by LVIC.
All low side IGBTs are shut down when the LVIC temperature exceeds overheating
threshold. See Fig.2-2 and refer chapter 3 section 8.

Hysteresis temperature required for output stop resetting after protection operation.
See Fig.2-2 and refer chapter 3 section 8.

TOH and T

are applied to the overheating protection model.

OH(hys)

Tripping voltage of the Low-side control IC power supply.
All low side IGBTs are shut down when the voltage of V

drops below this threshold.

CCL

Refer chapter 3 section 1.

Resetting threshold voltage from under voltage trip status of V

CCL

.

Refer chapter 3 section 1.

Vcc Under voltage hysteresis
of Low-side

Vcc Under voltage trip level of
High-side

Vcc Under voltage reset level
of High-side

Vcc Under voltage hysteresis
of High-side

VB Under voltage trip level V

VB Under voltage reset level V

VB Under voltage hysteresis V

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V

CCL(hys)

V

CCH(OFF)

V

CCH(ON)

V

CCH(hys)

B(OFF)

B(ON)

B(hys)

Hysteresis voltage between V

CCL(OFF)

and V

CCL(ON)

.

Tripping voltage of High-side control IC power supply.
The IGBTs of high-side are shut down when the voltage of V

drops below this

CCH

threshold. Refer chapter 3 section 1.

Resetting threshold voltage from under voltage trip status of V

.

See Fig.3-3

CCH

Resetting voltage at which the IGBT performs shut down when the High-side control
power supply voltage V

Hysteresis voltage between V

drops. Refer chapter 3 section 1.

CCH

CCH(OFF)

and V

CCH(ON)

.

Tripping voltage in under voltage of VB(*). The IGBTs of high-side are shut down
when the voltage of VB(*) drops below this threshold. Refer chapter 3 section 2.

Resetting voltage at which the IGBT performs shut down when the upper side arm
IGBT bias voltage VB(*) drops. Refer chapter 3 section 2.

Hysteresis voltage between V

B(OFF)

and V

B(ON)

.

2-4

Description of Terminal Symbols and Terminology

Table 2-2 Description of Terminology

(3) BSD block

Item Symbol Description

Chapter 2

Forward voltage of
Bootstrap diode

V

F(BSD)

BSD Forward voltage at a specified forward current.

(4) Thermal Characteristics

Item Symbol Description

Junction to Case Thermal
Resistance

R

th(j-c)_IGBT

Thermal resistance from the junction to the case of a single IGBT.

(per single IGBT)

Junction to Case Thermal
Resistance

R

th(j-c)_FWD

Thermal resistance from the junction to the case of a single FWD.

(per single FWD)

Case to Heat sink
Thermal Resistance

R

th(c-f)

Thermal resistance between the case and heat sink, when mounted on a heat
sink at the recommended torque using the thermal compound

(5) Mechanical Characteristics

Item Symbol Description

Tighten torque

-

Screwing torque when mounting the IPM to a heat sink with a specified screw.

Heat-sink side flatness

V

V

2.1V

IN

CE

I

C

10% 10%

t

d(on)

t

on

90%

-

t

rr

90%

t

r

t

c(on)

Flatness of a heat sink side. See Fig.2-3.

V

IN

I

rp

I

C

V

CE

0.8V

90%

10% 10%

t

d(off)

t

off

t

c(off)

t

f

Fig.2-1 Switching waveforms

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
Dec.-2016

2-5

Chapter 2

Approx.4.5

Approx.0.7

Approx. 7.0

TOP VIEWSIDE VIEW

Heat sink side

Tc measurement position

Temperature sensor position

Approx. 6.3

Description of Terminal Symbols and Terminology

Fig.2-2 The measurement position of temperature sensor and Tc.

Measurement position Measurement position

+ -

+

-

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
Dec.-2016

Fig.2-3 The measurement point of heat-sink side flatness.

2-6

Chapter 3

Detail of Signal Input/Output Terminals

Contents Page

1. Control Power Supply Terminals V

2. Power Supply Terminals of High Side VB(U,V,W) ................................... 3-6

3. Function of Internal BSDs (Boot Strap Diodes) ........................................ 3-9

4. Input Terminals IN(HU,HV,HW), IN(LU,LV,LW) ....................................... 3-13

5. Over Current Protection Input Terminal IS .............................................. 3-16

6. Fault Status Output Terminal VFO ........................................................... 3-17

7. Temperature Sensor Output Terminal TEMP ........................................... 3-18

8. Over Heating Protection ............................................................... ............. 3-20

CCH,VCCL

,COM ................................... 3-2

Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
Dec.-2016

3-1