Fuji Electric 6MBP200VEA-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBP200VEA060-50

IGBT Modules

IGBT MODULE (V series)
600V / 200A / IPM

Features

• Temperature protection provided by directly detecting

the junction temperature of the IGBTs

• Low power loss and soft switching

• High performance and high reliability IGBT with overheating

protection

• Higher reliability because of a big decrease in number of

parts in built-in control circuit

Maximum Ratings and Characteristics

Absolute Maximum Ratings (TC=25°C, VCC=15V unless otherwise specied)

Items Symbol Min. Max. Units

Collector-Emitter Voltage (*1) V

Short Circuit Voltage V

DC I

Collector Current

Inverter

Collector Power Dissipation 1 device (*3) P

Collector Current

Forward Current of Diode I

Brake

1ms I

Duty=88.6% (*2) -I

DC I

1ms I

Collector Power Dissipation 1 device (*3) P

Supply Voltage of Pre-Driver (*4) V

Input Signal Voltage (*5) V

Alarm Signal Voltage (*6) V

Alarm Signal Current (*7) I

Junction Temperature T

Operating Case Temperature T

Storage Temperature T

Solder Temperature (*8) T

Isolating Voltage (*9) V

Screw Torque

Note *1: VCES shall be applied to the input voltage between all Collector and Emitter.
[ P1-(U,V,W,B) , P2-(U,V,W,B) , (U,V,W,B)-N1 , (U,V,W,B)-N2 ]
Note *2: Duty=125°C/R
Note *3: P
Note *4: V
Note *5: V
Note *6: V
Note *7: I
Note *8: Immersion time 10±1sec. 1 time
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.

C=125°C/Rt h(j-c)Q (Inver ter & Brake)
CC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
in shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
ALM shall be applied to the voltage between ter minal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.

ALM shall be applied to the input current to terminal No.4, 8, 12 and 19.

th(j- c)D/(IF×VF Max.)×100

Terminal (M5)

Mounting (M5)

CES 0 600 V

SC 200 400 V

C - 200 A

CP - 400 A

C - 200 A

C - 714 W

C - - A

CP - - A

F - - A

C - - W

CC -0.5 20 V

in -0.5 VCC+0.5 V

ALM -0.5 VCC V

ALM - 20 mA

j - 150 °C

opr -20 110 °C

stg -40 125 °C

sol - 260 °C

iso - AC2500 Vrms

- - 3.5 Nm

1

1442a

MARCH 2014

6MBP200VEA060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical Characteristics (Tj=25°C, VCC=15V unless otherwise specied)

Items Symbol Conditions Min. Typ. Max. Units

Collector Current at off signal input I

Collector-Emitter saturation voltage (*10) V

Inverter

Forward voltage of FWD (*10) V

Collector Current at off signal input I

Collector-Emitter saturation voltage (*10) V

Brake

Forward voltage of FWD (*10) V

Switching time

CES VCE=600V - - 1.0 mA

CE(sat) IC=200A

F IF=200A

CES - - - - mA

CE(sat) -

F -

t

on

t

off - - 2.1 µs

t

rr VDC=300V, IF=200A - - 0.3 µs

VDC=300V, Tj=125°C, IC=200A

Terminal - - 1.80 V

Chip - 1.25 - V

Terminal - - 2.35 V

Chip - 1.80 - V

- - - V

- - - V

- - - V

- - - V

1.1 - - µs

Supply current of P-side pre-driver (per one unit) I

Supply current of N-side pre-driver I

Input signal threshold voltage

Over Current Protection
Level

Inverter

Brake - - - A

Over Current Protection Delay time t

Short Circuit Protection Delay time t

IGBT Chips Over Heating Protection Temperature Level T

Over Heating Protection Hysteresis T

Under Voltage Protection Level V

Under Voltage Protection Hysteresis V

Alarm Signal Hold Time

Resistance for current limit R

ccp

ccn - - 78 mA

V

inth(on)

V

inth(off ) OFF 1.5 1.7 1.9 V

I

OC Tj=125°C

dOC Tj=125°C - 5 - µs

SC Tj=125°C - 2 3 µs

jOH Surface of IGBT Chips 150 - - °C

jH - 20 - °C

UV 11.0 - 12.5 V

H 0.2 0.5 - V

t

ALM(OC)

t

ALM(UV ) VCC 10V 2.5 4.0 4.9 ms

t

ALM(Tj OH) 5.0 8.0 11.0 ms

ALM 960 1265 1570 Ω

Switching Frequency= 0-15kHz
TC=-20~110°C

Vin-GND

ON 1.2 1.4 1.6 V

ALM-GND
TC=-20~110°C

- - 26 mA

300 - - A

1.0 2.0 2.4 ms

Note *10: The Ma x value is a case where it measures from P2-(U,V,W,B) , (U,V,W,B)-N2.

Thermal Characteristics (TC = 25ºC)

Items Symbol Min. Typ. Max. Units

Inverter

Junction to Case Thermal Resistance (*11)

Brake

IGBT R

FWD R

IGBT R

FWD R

Case to Fin Thermal Resistance with Compound R

Note *11: For 1device, the measurement point of the case is just under the chip.

th(j- c)Q - - 0.175 °C/W

th(j- c)D - - 0.300 °C/W

th(j- c)Q - - - °C/W

th(j- c)D - - - °C/W

th(c-f) - 0.05 - °C/W

Noise Immunity (VDC=300V, VCC =15V)

Items Conditions Min. Typ. Max. Units

Common mode rectangular noise

Pulse width 1μs, polarity ±10 min.
Judge : no over-current, no miss operating

±2.0 - - kV

Recommended Operating Conditions

Items Symbol Min. Typ. Max. Units

DC Bus Voltage V

Power Supply Voltage of Pre-Driver V

Switching frequency of IPM f

Arm shoot through blocking time for IPM's input signal t

DC - - 400 V

CC 13.5 15.0 16.5 V

SW - - 20 kHz

dead 1.0 - - µs

Screw Torque (M5) - 2.5 - 3.5 Nm

Weight

Items Symbol Min. Typ. Max. Units

Weight W

t - 940 - g

2

6MBP200VEA060-50

r

A

A

A

Block Diagram

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

VCCU

VinU

LMU

GNDU

VCCV

VinV

LM V

GNDV

VCCW

VinW

LM W

GNDW

VCC

VinX

③

②
④

①

⑦

⑥
⑧

⑤

⑪

⑩
⑫

⑨

⑭

⑯

P1

Pre-Driver

R

ALM

P2

U

Pre-Driver

R

ALM

V

Pre-Driver

R

ALM

W

Pre-Driver

GND

VinY

VinZ

ALM

⑬

⑰

⑱

⑮

⑲

Pre-Driver

Pre-Driver

B

N1

N2

R

ALM

Pre-drivers include following functions

1. Amplifier for drive

2. Short circuit protection

3. Under voltage lockout circuit

4. Over current protection

5. IGBT chip over heating protection

3

6MBP200VEA060-50

5

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Power supply current vs. Switching frequency

j= 25°C(typ.)

T

200

Low-side
High-side

150

100

50

Power supply current : ICC [ mA ]

0

0 5 10 15 20 25

Switchig frequency : f

sw [ kHz ]

Under voltage vs. Junction temperature (typ.)

15

VCC=17V

CC=15V

V
V

CC=13V

VCC=17V

CC=15V

V
V

CC=13V

Input signal threshold voltage

vs. Power supply voltage (typ.)

3.0

TC=25~125°C

2.5

2.0

1.5

inth(on),Vinth(off) [ V ]

V

1.0

Input signal threshold voltage :

0.5

0.0

12 13 14 15 16 17 18

Power supply voltage : V

Under voltage hysterisis

vs. Junction temperature (typ.)

1

Vinth(off)

Vinth(on)

CC [ V ]

12

9

6

Under voltage : VUV [ V ]

3

0

0 20 40 60 80 100 120 140

Junction temperature : T

j [ °C ]

Alarm hold time vs. Power supply voltage (typ.)

10

tALM(TjOH)

8

6

4

Under voltage hysterisis : VH [ V ]

0.8

0.6

0.4

0.2

0

0 20 40 60 80 100 120 140

Junction temperature : T

j [ °C ]

Over heating characteristics

jOH,TjH vs. VCC (typ.)

T

200

TjOH

150

jH [°C]

100

Alarm hold time : tALM [ msec ]

2

tALM(OC)

0

12 13 14 15 16 17 18

Power supply voltage : V

CC [ V ]

4

OH hysterisis : T

50

Over heating protection : TjOH [°C]

0

12 13 14 15 16 17 18

Power supply voltage : V

TjH

CC [ V ]

6MBP200VEA060-50

Inverter

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage

j=25°C[Chip] (typ.)

T

400

VCC=15V

300

VCC=17V

VCC=13V

200

Collector current : IC [ A ]

100

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Collector-Emitter voltage : V

CE [ V ]

Collector current vs. Collector-Emitter voltage

j=125°C[Chip] (typ.)

T

400

VCC=15V

300

VCC=17V VCC=13V

Collector current vs. Collector-Emitter voltage

j=25°C[Terminal] (typ.)

T

400

VCC=15V

300

VCC=17V

VCC=13V

200

Collector current : IC [ A ]

100

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Collector-Emitter voltage : V

CE [ V ]

Collector current vs. Collector-Emitter voltage

j=125°C[Terminal] (typ.)

T

400

VCC=15V

300

VCC=17V

VCC=13V

200

Collector current : IC [ A ]

100

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Collector-Emitter voltage : V

CE [ V ]

Forward current vs. Forward voltage

[Chip] (typ.)

400

Tj=125

300

°C

Tj=25

°C

200

Forward current : IF [ A ]

100

200

Collector current : IC [ A ]

100

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Collector-Emitter voltage : V

CE [ V ]

Forward current vs. Forward voltage

[Terminal] (typ.)

400

Tj=125

°C

300

Tj=25

200

Forward current : IF [ A ]

100

°C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward voltage : V

F [ V ]

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Forward voltage : V

F [ V ]

5

6MBP200VEA060-50

7

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching Loss vs. Collector Current (typ.)

DC=300V,VCC=15V,Tj=25°C

V

20

15

10

5

Switching loss : Eon,Eoff,Err [mJ/cycle]

0

0 100 200 300 400

Collector current : IC [ A ]

Reversed biased safe operating area

CC=15V,Tj≦125°C[Main Terminal] (min.)

600

V

500

Eon

Eoff

Err

Switching Loss vs. Collector Current (typ.)

DC=300V,VCC=15V,Tj=125°C

V

20

15

10

5

Switching loss : Eon,Eoff,Err [mJ/cycle]

0

0 100 200 300 400

Collector current : IC [ A ]

Transient thermal resistance (max.)

10

Eon

Eoff

Err

400

C [ A ]

300

200

Collector current : I

RBSOA

(Repetitive pulse)

100

0

0 200 400 600 800

Collector-Emitter voltage : V

CE [ V ]

Power derating for IGBT (max.)

[per device]

800

600

C [ W ]

400

1

0.1

Thermal resistance : Rth(j-c) [ °C/W ]

0.01

0.001 0.01 0.1 1 10

Pulse width : P

W [ sec ]

Power derating for FWD (max.)

[per device]

600

400

FWD

IGBT

200

Collector Power Dissipation : P

0

0 50 100 150

Case Temperature : T

C [ °C ]

200

Collector Power Dissipation : PC [ W ]

0

0 50 100 150

Case Temperature : T

6

C [ °C ]

6MBP200VEA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

10000

1000

100

Switching time : ton,toff,tf [ nsec ]

1000

rr [ nsec ]

100

Switching time vs. Collector current (typ.)

DC=300V,VCC=15V,Tj=25°C

V

ton
toff

tf

10

0 100 200 300 400

Collector current : IC [ A ]

Reverse recovery characteristics (typ.)

rr,Irr vs. If

t

trr Tj=125°C

trr Tj=25°C
Irr Tj=125°C

Irr Tj=25°C

Switching time vs. Collector current (typ.)

DC=300V,VCC=15V,Tj=125°C

V

10000

1000

100

Switching time : ton,toff,tf [ nsec ]

10

0 100 200 300 400

Collector current : IC [ A ]

Over current protection vs. Junction temperature (typ.)

CC=15V

V

1000

800

600

ton

toff

tf

10

Reverse recovery current : Irr [ A ]

Reverse recovery time : t

1

0 100 200 300 400

Outline Drawings, mm

Forward current : IF [ A ]

400

200

Over current protection level : IOC [ A ]

0

0 20 40 60 80 100 120 140

Junction temperature : T

j [ °C ]

Weight: 940g(typ.)

7

6MBP200VEA060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. A ll applic ations described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric C o., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual propert y rights which may arise from the use of the applications described herein.

3. A lthough Fuji Electric Co., Ltd. is enhancing product qualit y and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is rec ommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduc ed in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliabilit y
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliabilit y than normal, such as for the equipment listed below,
it is imperative to cont act Fuji Electric Co., Ltd. to obtain prior approval. W hen using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detector s with an auto -shut- off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996 -2014 by Fuji Electr ic Co., Ltd. All r ights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

8

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

日本
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中国
Europe
North America

www.fujielectric.co.jp/products/semiconductor/

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Information

日本

1

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2

製品情報

3

アプリケーションマニュアル

4

技術資料

5

マウンティングインストラクション

6

IGBT 損失シミュレーションソフト

7

AT-NPC 3-Level 損失シュミレーションソフト

8

富士電機技報

9

製品のお問い合わせ

10

改廃のお知らせ

Global

1

Semiconductors General Catalog

2

Product Information

3

Application Manuals

4

Technical Documents

5

Mounting Instructions

6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
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www.fujielectric.co.jp/products/semiconductor/journal/
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中国

1

半导体综合目录

2

产品信息

3

应用手册

4

技术资料

5

安装说明书

6

IGBT 损耗模拟软件

7

AT-NPC 3-Level 损耗模拟软件

8

富士电机技报

9

产品咨询

10

产品更改和停产信息

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2015-10