Fuji Electric 6MBP200VEA-060-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBP200VEA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 200A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25°C, VCC=15V unless otherwise specied)
Items Symbol Min. Max. Units
Collector-Emitter Voltage (*1) V
Short Circuit Voltage V
DC I
Collector Current
Inverter
Collector Power Dissipation 1 device (*3) P
Collector Current
Forward Current of Diode I
Brake
1ms I
Duty=88.6% (*2) -I
DC I
1ms I
Collector Power Dissipation 1 device (*3) P
Supply Voltage of Pre-Driver (*4) V
Input Signal Voltage (*5) V
Alarm Signal Voltage (*6) V
Alarm Signal Current (*7) I
Junction Temperature T
Operating Case Temperature T
Storage Temperature T
Solder Temperature (*8) T
Isolating Voltage (*9) V
Screw Torque
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter.
[ P1-(U,V,W,B) , P2-(U,V,W,B) , (U,V,W,B)-N1 , (U,V,W,B)-N2 ]
Note *2: Duty=125°C/R
Note *3: P
Note *4: V
Note *5: V
Note *6: V
Note *7: I
Note *8: Immersion time 10±1sec. 1 time
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
C=125°C/Rt h(j-c)Q (Inver ter & Brake)
CC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
in shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
ALM shall be applied to the voltage between ter minal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
ALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
th(j- c)D/(IF×VF Max.)×100
Terminal (M5)
Mounting (M5)
CES 0 600 V
SC 200 400 V
C - 200 A
CP - 400 A
C - 200 A
C - 714 W
C - - A
CP - - A
F - - A
C - - W
CC -0.5 20 V
in -0.5 VCC+0.5 V
ALM -0.5 VCC V
ALM - 20 mA
j - 150 °C
opr -20 110 °C
stg -40 125 °C
sol - 260 °C
iso - AC2500 Vrms
- - 3.5 Nm
1
1442a
MARCH 2014
6MBP200VEA060-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25°C, VCC=15V unless otherwise specied)
Items Symbol Conditions Min. Typ. Max. Units
Collector Current at off signal input I
Collector-Emitter saturation voltage (*10) V
Inverter
Forward voltage of FWD (*10) V
Collector Current at off signal input I
Collector-Emitter saturation voltage (*10) V
Brake
Forward voltage of FWD (*10) V
Switching time
CES VCE=600V - - 1.0 mA
CE(sat) IC=200A
F IF=200A
CES - - - - mA
CE(sat) -
F -
t
on
t
off - - 2.1 µs
t
rr VDC=300V, IF=200A - - 0.3 µs
VDC=300V, Tj=125°C, IC=200A
Terminal - - 1.80 V
Chip - 1.25 - V
Terminal - - 2.35 V
Chip - 1.80 - V
- - - V
- - - V
- - - V
- - - V
1.1 - - µs
Supply current of P-side pre-driver (per one unit) I
Supply current of N-side pre-driver I
Input signal threshold voltage
Over Current Protection
Level
Inverter
Brake - - - A
Over Current Protection Delay time t
Short Circuit Protection Delay time t
IGBT Chips Over Heating Protection Temperature Level T
Over Heating Protection Hysteresis T
Under Voltage Protection Level V
Under Voltage Protection Hysteresis V
Alarm Signal Hold Time
Resistance for current limit R
ccp
ccn - - 78 mA
V
inth(on)
V
inth(off ) OFF 1.5 1.7 1.9 V
I
OC Tj=125°C
dOC Tj=125°C - 5 - µs
SC Tj=125°C - 2 3 µs
jOH Surface of IGBT Chips 150 - - °C
jH - 20 - °C
UV 11.0 - 12.5 V
H 0.2 0.5 - V
t
ALM(OC)
t
ALM(UV ) VCC 10V 2.5 4.0 4.9 ms
t
ALM(Tj OH) 5.0 8.0 11.0 ms
ALM 960 1265 1570 Ω
Switching Frequency= 0-15kHz
TC=-20~110°C
Vin-GND
ON 1.2 1.4 1.6 V
ALM-GND
TC=-20~110°C
- - 26 mA
300 - - A
1.0 2.0 2.4 ms
Note *10: The Ma x value is a case where it measures from P2-(U,V,W,B) , (U,V,W,B)-N2.
Thermal Characteristics (TC = 25ºC)
Items Symbol Min. Typ. Max. Units
Inverter
Junction to Case Thermal Resistance (*11)
Brake
IGBT R
FWD R
IGBT R
FWD R
Case to Fin Thermal Resistance with Compound R
Note *11: For 1device, the measurement point of the case is just under the chip.
th(j- c)Q - - 0.175 °C/W
th(j- c)D - - 0.300 °C/W
th(j- c)Q - - - °C/W
th(j- c)D - - - °C/W
th(c-f) - 0.05 - °C/W
Noise Immunity (VDC=300V, VCC =15V)
Items Conditions Min. Typ. Max. Units
Common mode rectangular noise
Pulse width 1μs, polarity ±10 min.
Judge : no over-current, no miss operating
±2.0 - - kV
Recommended Operating Conditions
Items Symbol Min. Typ. Max. Units
DC Bus Voltage V
Power Supply Voltage of Pre-Driver V
Switching frequency of IPM f
Arm shoot through blocking time for IPM's input signal t
DC - - 400 V
CC 13.5 15.0 16.5 V
SW - - 20 kHz
dead 1.0 - - µs
Screw Torque (M5) - 2.5 - 3.5 Nm
Weight
Items Symbol Min. Typ. Max. Units
Weight W
t - 940 - g
2
6MBP200VEA060-50
r
A
A
A
Block Diagram
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
VCCU
VinU
LMU
GNDU
VCCV
VinV
LM V
GNDV
VCCW
VinW
LM W
GNDW
VCC
VinX
③
②
④
①
⑦
⑥
⑧
⑤
⑪
⑩
⑫
⑨
⑭
⑯
P1
Pre-Driver
R
ALM
P2
U
Pre-Driver
R
ALM
V
Pre-Driver
R
ALM
W
Pre-Driver
GND
VinY
VinZ
ALM
⑬
⑰
⑱
⑮
⑲
Pre-Driver
Pre-Driver
B
N1
N2
R
ALM
Pre-drivers include following functions
1. Amplifier for drive
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
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