Fuji Electric 6MBP200RA-060 Data Sheet

6MBP200RA060

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
Duty=57.8%
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

450
500
400
600
200
400
200
735
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

600V / 200A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=600V input terminal open
Ic=200A

-Ic=200A

– – 1.0 mA
– – 2.8 V
– – 3.0 V

6MBP200RA060

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

6
18

1.00

1.70

­ 110

­ 150

­ 300

-

11.0

0.2

1.5

­1425

-

-

1.35

2.05

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

32
96

1.70

2.40

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=200A, VDC=300V
toff
trr IF=200A, VDC=300V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.17

- 0.36

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 400 V
VCC 13.5 15 16.5 V
fSW 1 - 20 V

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP200RA060

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

6MBP200RA060

Characteristics (Representative)

Control circuit

IGBT-IPM

Powe r supply curren t vs. Switching frequency

Tj=100°C

80
70
60
50
40
30
20

Power supply current : Icc (mA)

10

0

0 5 10 15 20 25

P-side
N-side

Switching frequency : f sw (kHz)

Under voltage vs. Junction tempe rature

14

12

10

Vcc=17V

Vcc=15V
Vcc=13V

Vcc=17V
Vcc=15V

Vcc=13V

Input signal threshold volt age

vs. Power supply voltage

3

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supp ly volt age : Vcc (V)

Under voltage hysterisis vs. Jnction temperature

1

0.8

Tj=25°C
Tj=125°C

} Vin(of f)

} Vin(on)

8

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Pow e r supply voltage

3

2.5
Tj=125°C

2

Tj=25°C

1.5

1

0.5

Alarm hold time : tALM (mSec)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

0.6

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

OH hysterisis : TcH,TjH (°C)

50

Over heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

TcH,TjH

6MBP200RA060

Inverter

IGBT-IPM

C o lle cto r c u rr ent v s . C o lle cto r- E mi tter v o lta ge

Tj=25°C

350

300

250

200

150

100

C ollec to r Cu rre nt : Ic (A)

50

0

0 0 .5 1 1 .5 2 2.5 3 3.5

C o ll e c tor -Em itter v ol tage : Vce (V)

Vcc=17V

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=25°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

tf

Collector current vs. Collector-Emitter voltage

Tj=125°C

350

300

250

200

150

100

Collector Current : Ic (A)

50

0

0 0.5 1 1.5 2 2.5 3 3.5

Collector-Emitter voltage : Vce (V)

Vcc=17V

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=125°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

tf

100

Switching time : ton,toff,tf (nSec)

10

0 50 100 150 200 250 300 350

Collector current : Ic (A)

Forward curren t vs. Forward voltage

350

300

250

200

150

100

Forward Current : If (A)

50

0

00.511.522.53
Forwar d voltage : Vf (V)

125°C

25°C

100

Switching time : ton,toff,tf (nSec)

10

0 50 100 150 200 250 300 350

Collecto r current : Ic (A)

Re verse rec ove ry cha racteristics

trr,Irr vs . IF

1000

100

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

10

0 50 100 150 200 250 300 350

Forward curr ent : IF(A)

trr125°C

trr25°C

Irr125°C

Irr25°C

6MBP200RA060

IGBT-IPM

Transient thermal resistance

1

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for IGBT

(per device)

800
700
600
500
400
300
200
100

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

15

Edc=300V,Vcc=15V,Tj=25°C

FWD

IGBT

Reversed biased safe operating area

Vcc=15V,Tj 125°C

2000
1800
1600
1400
1200
1000

800
600

Collecto r current : Ic (A)

400
200

0

0 100 200 300 400 500 600 700

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vce (V)

<

=

Power d eratin g fo r F W D

(per device)

350

300

250

200

150

100

50

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=300V,Vcc=15V,Tj=125°C

15

10

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200

Collector current : Ic (A)

Eon

Eoff

Err

Eon

10

Eoff

5

Err

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 50 100 150 200

Collector current : Ic (A)

6MBP200RA060

Over current protection vs. Junction temperature

800
700
600
500
400
300
200

Over current protection level : Ioc(A)

100

0

0 20406080100120140

IGBT-IPM

Vcc=15V

Junction temperature : Tj(°C)