Fuji Electric 6MBP100RA-120 Data Sheet

6MBP100RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900
1000
800
1200
100
200
100
735
150
20
Vz
1
Vcc
15
125
100
AC2.5

3.5 *6

3.5 *6

1200V / 100A 6 in one-package

V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condtion Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD

ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=100A

-Ic=100A

– – 1.0 mA
– – 2.6 V
– – 3.0 V

6MBP100RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IGBT

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature

surface of IGBT chips

Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.70

­ 110

­ 150

­ 150

-

11.0

0.2

1.5

­1425

-

-

1.35

2.05

8.0

­ 20

­ 20

­ 10

-

­ 2

­1500

18
65

1.70

2.40

­ 125

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C , Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=100A, VDC=600V
toff
trr IF=100A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD

Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.17

- 0.36

0.05 -

°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

6MBP100RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

6MBP100RA120

Characteristics (Representative)

Control Circuit

IGBT-IPM

Powe r supply current vs. Switching frequency

Tj=10 0°C

70

P-side

60

50

40

30

20

N-side

Power supply current : Icc (mA)

10

0

0 5 10 15 20 25

Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

14

12

10

Vcc=17V

Vcc=15V

Vcc=13V

Vcc=17V

Vcc=15V
Vcc=13V

Input signal threshold voltage

vs. P o we r su p p ly vo ltag e

2.5

2

1.5

1

: Vin (on ) ,V in( o ff) (V )

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Under voltage hysterisis vs. Jnction temp erature

1

0.8

Tj= 25°C
Tj=125°C

} Vin(off)

} Vin(on)

8

6

Unde r v oltage : VU VT (V)

4

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

Alar m h o ld tim e : tAL M (m Se c)

0.5

Tj=25°C

0.6

0.4

Under voltage hysterisis : VH (V)

0.2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

100

OH hys terisis : T cH ,TjH (°C)

50

O ve r h e a ting p ro te c tio n : T c OH,T jO H (°C)

TcH,TjH

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

6MBP100RA120

Inverter

IGBT-IPM

Co l lector C u rr e n t : Ic ( A )

1000 0

1000

C o lle c to r c u rre n t v s . Colle c to r -Emit te r vo ltage

Tj=25 °C

160

140

120

100

80

60

40

20

0

00.511.522.53

Co l le c tor-Emitter voltage : Vce (V)

Vcc=17V

Vcc=15V

Vcc=13V

Switching time v s. Co llec t or cur r ent

Edc=600V,Vcc=15V,Tj=25°C

toff

ton

Collector current vs. C ollector-Em itter voltage

Tj=125°C

160

140

120

100

80

60

C o llec tor Cu rre n t : Ic (A)

40

20

0

00.511.522.53
C oll ector-Em itt er volt age : Vce (V)

Vcc=17V

S w it c hing t ime v s . Collec t o r c ur r e n t

1000 0

1000

Edc=600V,Vcc=15V,Tj=125°C

to f f

ton

Vcc=15V

Vcc=13V

100

Switchin g tim e : ton ,to ff,tf (n S e c )

10

0 20406080100120140160

Collector current : Ic (A)

Forward current vs. Forward voltage

160

140

120

100

80

60

Fo rw ard C u rre n t : If (A)

40

20

125°C

tf

tf

100

Switch ing tim e : ton ,to ff,tf (nS ec )

10

0 20406080100120140160

Co lle cto r cu r ren t : Ic (A )

Reverse recovery characteristics

trr,Irr vs. IF

trr125°C

25°C

100

trr25°C

Irr125°C

Irr25°C

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

0

0 0.5 1 1 .5 2 2.5 3

Forward vo ltage : V f (V )

10

0 20406080100120140160

Forward curr ent : IF(A)

6MBP100RA120

IGBT-IPM

Trans ient the rma l resistan ce

1

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for IGBT

(per device)

800

700

FWD

IGBT

Reversed biased safe operating area

1400

1200

1000

800

600

400

Co llector cu rrent : Ic (A)

200

0

0 200 400 600 800 1000 1200 1400

Vcc=15V,Tj 125°C

SCSO A
(non-repetitive pulse)

RBSOA
(Repetitive pulse)

C o llec t or -E mitte r v o ltage : Vce (V)

<
=

P o w e r d e ra tin g fo r F WD

(per device)

350

300

600

500

400

300

200

100

Collecter Power Dissipation : Pc (W )

0

0 20406080100120140160

Case Temperature : Tc (°C)

S wit ching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=25°C

40

35

30

25

20

Eon

250

200

150

100

50

Collecter Power Dissipation : Pc (W)

0

0 20406080100120140160

Case Temperature : Tc (°C)

S wit c hing Loss vs. Co llector Cu rrent

Edc=600V,Vcc=15V,Tj=125°C

40

35

30

25

20

Eon

Eoff

15

10

5

S w itc h in g lo s s : E o n ,E o ff, E rr (mJ /c yc le )

0

0 20406080100120140160

Collector current : Ic (A)

Eoff

Err

15

10

5

S w itch in g loss : E o n,Eoff,E rr (m J /cyc le )

0

0 20406080100120140160

C o llec tor c u rren t : Ic (A )

Err

6MBP100RA120

Over current protection vs. Junction temperature

400

350

300

250

200

150

100

O ve r c u rre n t pro te ction lev e l : Ioc (A )

50

0

0 20 40 60 80 100 120 1 40

Junc tion temperatu re : Tj(°C)

Vcc=15V

IGBT-IPM