Fuji Electric 6MBI75VA-120-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBI75VA-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 75A / 6 in one package
Features
Compact Package
P.C.Board Mount
CE (sat)
Low V
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Maximum ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation Pc 1 device 385 W
Junction temperature Tj 175
Operating junciton temperature
(under switching conditions)
Case temperature Tc 125
Storage temperature Tstg -40 to +125
Isolation voltage
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5- 3.5 Nm (M5)
between terminal and copper base (*1)
between thermistor and others (*2)
CES 1200 V
GES ±20 V
Ic Continuous Tc=100°C 75
Icp 1ms Tc=80°C 150
-Ic 75
-Ic pulse 1ms 150
Tjop 150
Viso AC : 1min. 2500 VAC
Maximum
ratings
Units
°C
A
1
7173b
JULY 2015
6MBI75VA-120-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance Cies V
CES VGE = 0V, VCE = 1200V - - 1.0 mA
GES VGE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 75mA 6.0 6.5 7.0 V
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
g (int) - - 10 - Ω
VGE = 15V
IC = 75A
VGE = 15V
IC = 75A
CE
= 10V, VGE = 0V, f = 1MHz - 6.0 - nF
Tj=25°C - 2.25 2.70
Tj=125°C - 2.60 -
Tj=150°C - 2.65 -
Tj=25°C - 1.85 2.30
Tj=125°C - 2.20 -
Tj=150°C - 2.25 -
ton
V
Inverter
Turn-on time
tr - 0.09 0.60
tr (i) - 0.03 -
Turn-off time
toff - 0.53 1.00
tf - 0.06 0.30
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time trr I
Resistance R
Thermistor
B value B T = 25 / 50°C 3305 3375 3450 K
CC = 600V
IC = 75A
VGE = +15 / -15V
RG = 2.2Ω
Tj=25°C - 2.10 2.55
F = 75A
I
Tj=125°C - 2.25 -
Tj=150°C - 2.20 -
Tj=25°C - 1.70 2.15
F = 75A
I
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
F = 75A - - 0.35 µs
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.39 1.20
Units
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.39
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
Characteristics
min. typ. max.
Equivalent Circuit Schematic
[ Thermistor ][ Inverter ]
15,16
19,20
15,16
13,14
13,14
17 18
17 18
25,26
25,26
27,28
27,28
1
1
2
2
3
3
4
4
5
5
6
6
U V W
U V W
23,24
23,24 21,22
7
7
8
8
10
10
11
11
12
12
9
9
Units
°C/WInverter FWD - - 0.55
2
6MBI75VA-120-50
15V
10V
8V
15V
12V
10V
8V
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
o
C / chip
Tj= 25
150
V
=20V
GE
[ A ]
C
100
50
C o l l e c t o r c u r r e n t : I
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V
=15V / chip
GE
150
[ A ]
C
100
Tj=25°C
Tj=150°
125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
o
Tj= 150
150
[ A ]
C
100
50
C / chip
V
=20V
GE
C o l l e c t o r c u r r e n t : I
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
o
Tj= 25
C / chip
8
[ V ]
C E
6
50
C o l l e c t o r c u r r e n t : I
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
=0V, f= 1MHz, Tj= 25 o C
V
GE
100.0
10.0
1.0
Cies
Coes
4
2
Ic=150A
Ic=75A
Ic= 38A
C o l l e c t o r - E m i t t e r v o l t a g e : V
0
5 10 15 20 25
Gate - Emitter voltage: V
GE
[V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V ， Ic=75A ， Tj= 25°C
[ 5 V / d i v ]
[ 2 0 0 V / d i v ]
G E
C E
V
CE
0
V
GE
C a p a c i t a n c e : C i e s , C o e s , C r e s [ n F ]
0.1
0 10 20 30 40
Cres
Collector - Emitter voltage: V
CE
[V]
G a t e - E m i t t e r v o l t a g e : V
C o l l e c t o r - E m i t t e r v o l t a g e : V
0080008-
Gate charge: Qg [nC]
3
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