Fuji Electric 6MBI75VA-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI75VA-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 75A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 275 W

Junction temperature Tj 175

Operating junciton temperature
(under switching conditions)

Case temperature Tc 125

Storage temperature Tstg -40 to +125

Isolation voltage

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
between thermistor and others (*2)

CES 600 V

GES ±20 V

Ic Continuous Tc=80°C 75

Icp 1ms Tc=80°C 150

-Ic 75

-Ic pulse 1ms 150

Tjop 150

Viso AC : 1min. 2500 VAC

Maximum

ratings

Units

°C

A

1

7169b

JUNE 2015

6MBI75VA-060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

CES VGE = 0V, VCE = 600V - - 1.0 mA

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 75mA 6.2 6.7 7.2 V

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

VGE = 15V
IC = 75A

VGE = 15V
IC = 75A

Tj=25°C - 2.00 2.45

Tj=125°C - 2.30 -

Tj=150°C - 2.50 -

Tj=25°C - 1.60 2.05

Tj=125°C - 1.90 -

Tj=150°C - 2.10 -

Internal gate resistance Rg(int) - - 0 - Ω

Input capacitance Cies V

CE

= 10V, VGE = 0V, f = 1MHz - 4.9 - nF

ton

V

Inverter

Turn-on time

tr - 0.25 0.60

tr (i) - 0.07 -

Turn-off time

toff - 0.52 1.20

tf - 0.03 0.45

V

F

(terminal)

Forward on voltage

V

F

(chip)

Reverse recovery time trr I

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

CC = 300V

IC = 75A
VGE = +15 / -15V
RG = 30Ω

Tj=25°C - 2.00 2.45

F = 75A

I

Tj=125°C - 1.90 -

Tj=150°C - 1.85 -

Tj=25°C - 1.60 2.05

F = 75A

I

Tj=125°C - 1.50 -

Tj=150°C - 1.45 -

F = 75A - - 0.35 µs

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.36 1.20

Units

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.50

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

Characteristics

min. typ. max.

Units

°C/WInverter FWD - - 0.95

2

6MBI75VA-060-50

15V

10V

8V

15V

12V

10V

8V

Coes

Cres

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

C / chip

Tj= 25

Collector current: IC [A]

150

125

100

75

50

25

0

0 1 2 3 4 5

=20V

V

GE

Collector-Emitter voltage: VCE [V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

V

=15V / chip

GE

150

125

100

Tj=25°C

150°C

125°C

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

Collector current: IC [A]

Tj= 150

150

125

100

75

50

25

0

0 1 2 3 4 5

V

=20V

GE

Collector-Emitter voltage: V

C / chip

CE [V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

o

C / chip

Tj= 25

8

CE [V]

6

75

50

Collector current: IC [A]

25

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

=0V, f= 1MHz, Tj= 25 o C

GE

100.0

10.0
Cies

1.0

4

2

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=300V, Ic=75A, Tj= 25°C

GE [5V/div]

V

CE

Ic=150A
Ic=75A
Ic= 38A

V

GE

Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30 40

Collector - Emitter voltage: V

CE [V]

3

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

-600 0 600

Gate charge: Qg [nC]