Fuji Electric 6MBI75VA-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI75VA-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 75A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 275 W

Junction temperature Tj 175

Operating junciton temperature
(under switching conditions)

Case temperature Tc 125

Storage temperature Tstg -40 to +125

Isolation voltage

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
between thermistor and others (*2)

CES 600 V

GES ±20 V

Ic Continuous Tc=80°C 75

Icp 1ms Tc=80°C 150

-Ic 75

-Ic pulse 1ms 150

Tjop 150

Viso AC : 1min. 2500 VAC

Maximum

ratings

Units

°C

A

1

7169b

JUNE 2015

6MBI75VA-060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

CES VGE = 0V, VCE = 600V - - 1.0 mA

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 75mA 6.2 6.7 7.2 V

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

VGE = 15V
IC = 75A

VGE = 15V
IC = 75A

Tj=25°C - 2.00 2.45

Tj=125°C - 2.30 -

Tj=150°C - 2.50 -

Tj=25°C - 1.60 2.05

Tj=125°C - 1.90 -

Tj=150°C - 2.10 -

Internal gate resistance Rg(int) - - 0 - Ω

Input capacitance Cies V

CE

= 10V, VGE = 0V, f = 1MHz - 4.9 - nF

ton

V

Inverter

Turn-on time

tr - 0.25 0.60

tr (i) - 0.07 -

Turn-off time

toff - 0.52 1.20

tf - 0.03 0.45

V

F

(terminal)

Forward on voltage

V

F

(chip)

Reverse recovery time trr I

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

CC = 300V

IC = 75A
VGE = +15 / -15V
RG = 30Ω

Tj=25°C - 2.00 2.45

F = 75A

I

Tj=125°C - 1.90 -

Tj=150°C - 1.85 -

Tj=25°C - 1.60 2.05

F = 75A

I

Tj=125°C - 1.50 -

Tj=150°C - 1.45 -

F = 75A - - 0.35 µs

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.36 1.20

Units

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.50

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

Characteristics

min. typ. max.

Units

°C/WInverter FWD - - 0.95

2

6MBI75VA-060-50

15V

10V

8V

15V

12V

10V

8V

Coes

Cres

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

C / chip

Tj= 25

Collector current: IC [A]

150

125

100

75

50

25

0

0 1 2 3 4 5

=20V

V

GE

Collector-Emitter voltage: VCE [V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

V

=15V / chip

GE

150

125

100

Tj=25°C

150°C

125°C

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

Collector current: IC [A]

Tj= 150

150

125

100

75

50

25

0

0 1 2 3 4 5

V

=20V

GE

Collector-Emitter voltage: V

C / chip

CE [V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

o

C / chip

Tj= 25

8

CE [V]

6

75

50

Collector current: IC [A]

25

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

=0V, f= 1MHz, Tj= 25 o C

GE

100.0

10.0
Cies

1.0

4

2

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=300V, Ic=75A, Tj= 25°C

GE [5V/div]

V

CE

Ic=150A
Ic=75A
Ic= 38A

V

GE

Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30 40

Collector - Emitter voltage: V

CE [V]

3

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

-600 0 600

Gate charge: Qg [nC]

6MBI75VA-060-50

5

toff

tr

tf

toff

ton

ton

tr

tf

ton

tr

tf

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 50 100 150 200

=±15V, Rg=30Ω, Tj= 125°C

GE

Collector current: IC [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

Vcc=300V, Ic=75A, V

10000

=±15V, Tj= 125°C

GE

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 50 100 150 200

=±15V, Rg=30Ω, Tj= 150°C

GE

Collector current: I

[ Inverter ]

Switching loss vs. Collector current (typ.)

Vcc=300V, V

6

5

=±15V, Rg=30Ω

GE

C [A]

Eon(150°C)

Eon(125°C)

1000

100

10

Switching time : ton, tr, toff, tf [ nsec ]

10.0 100.0 1000.0

Gate resistance : Rg [Ω]

[ Inverter ]

Switching loss vs. gate resistance (typ.)

Vcc=300V, Ic=75A, V

20

15

10

5

=±15V

GE

Eon(150°C)

Eon(125°C)

Eoff(150°C)
Eoff(125°C)

4

3

2

1

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0 25 50 75 100 125 150

Collector current: IC [A]

[ Inverter ]

Reverse bias safe operating area (max.)

=15V,-VGE <= 15V, RG >= 30Ω ,Tj = 150°C

+V

GE

200

150

100

RBSOA

50

Collector current: IC [A]

(Repetitive pulse)

Eoff(150°C)
Eoff(125°C)

Err(150°C)

Err(125°C)

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

10 100 1000

Gate resistance : Rg [Ω]

Err(150°C)
Err(125°C)

0

0 100 200 300 400 500 600 700 800

Collector-Emitter voltage : VCE [V]

(Main terminals)

4

6MBI75VA-060-50

150

125

100

75

Tj=150°C

50

Forward current : IF [A]

25

0

0 1 2 3 4 5

Forward on voltage : V

http://www.fujielectric.com/products/semiconductor/

[ Inverter ] [ Inverter ]

Reverse recovery characteristics (typ.) Forward current vs. forward on voltage (typ.)

Tj=25°C

Tj=125°C

chip

1000

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

F [V] Forward current : IF [A]

Vcc=300V, V

GE

100

10

0 50 100 150 200

IGBT Modules

=±15V, Rg=30Ω

Irr(150°C)

Irr(125°C)

trr(150°C)

trr(125°C)

Transient thermal resistance (max.)

10.00

1.00

0.10

Thermal resistanse : Rth(j-c) [ °C/W ]

0.01

n 1 2 3 4

_

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.05363 0.13597 0.19209 0.11831

n

[°C/W] FWD 0.10190 0.25835 0.36497 0.22478

4

=

=

n

1

0.001 0.010 0.100 1.000

t

n

1

erZth

n

Pulse width : Pw [sec]

Outline Drawings(Unit:mm)

FWD[Inverter]

IGBT[Inverter]

[ Thermistor ]

Temperature characteristic (typ.)

100

10

1

Resistance : R [kΩ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Weight: 180g(typ.)

5

6MBI75VA-060-50

Equivalent Circuit

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Thermistor ] [ Inverter ]

25,26

27,28

1
2

3
4

5
6

U V W

U V W

23,24

7
8

9

10

21,22 19,20

11
12

15,16

13,14

17 18

17 18

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.

2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either

express or implied, under any patent, c opyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warrant y, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.

3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product qualit y and reliability, a small percentage of semiconductor

products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, re, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has

normal reliabilit y requirements.

• Computers • OA equipment • Communications equipment (terminal devic es) • Measurement equipment

• Machine tools • Audiovisual equipment • Electric al home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed

below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto -shut- off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safet y devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic

equipment (without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before

using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set for th herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

日本
Global
中国
Europe
North America

www.fujielectric.co.jp/products/semiconductor/

www.fujielectric.com/products/semiconductor/

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www.americas.fujielectric.com/components/semiconductors/

Information

日本

1

半導体総合カタログ

2

製品情報

3

アプリケーションマニュアル

4

技術資料

5

マウンティングインストラクション

6

IGBT 損失シミュレーションソフト

7

AT-NPC 3-Level 損失シュミレーションソフト

8

富士電機技報

9

製品のお問い合わせ

10

改廃のお知らせ

Global

1

Semiconductors General Catalog

2

Product Information

3

Application Manuals

4

Technical Documents

5

Mounting Instructions

6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/
www.fujielectric.co.jp/products/semiconductor/journal/
www.fujielectric.co.jp/products/semiconductor/contact/
www.fujielectric.co.jp/products/semiconductor/discontinued/

www.fujielectric.com/products/semiconductor/catalog/
www.fujielectric.com/products/semiconductor/model/
www.fujielectric.com/products/semiconductor/model/igbt/application/
www.fujielectric.com/products/semiconductor/model/igbt/technical/
www.fujielectric.com/products/semiconductor/model/igbt/mounting/
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www.fujielectric.com/products/semiconductor/journal/
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中国

1

半导体综合目录

2

产品信息

3

应用手册

4

技术资料

5

安装说明书

6

IGBT 损耗模拟软件

7

AT-NPC 3-Level 损耗模拟软件

8

富士电机技报

9

产品咨询

10

产品更改和停产信息

www.fujielectric.com.cn/products/semiconductor/catalog/
www.fujielectric.com.cn/products/semiconductor/model/
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www.fujielectric.com.cn/products/semiconductor/journal/
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www.fujielectric.com.cn/products/semiconductor/discontinued/

2015-10