Fuji Electric 6MBI50VA-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI50VA-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 50A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 280 W

Maximum junction temperature Tjmax 175

Temperature under switching conditions Tjop 150

Case temperature Tc 125

Storage temperature Tstg -40~+125

Isolation voltage

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shor ted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
between thermistor and others (*2)

CES 1200 V

GES ±20 V

Ic Continuous Tc=100°C 50

Icp 1ms Tc=80°C 100

-Ic 50

-Ic pulse 1ms 100

Viso AC : 1min. 2500 VAC

Maximum

ratings

Units

°C

A

1

7172b

JULY 2015

6MBI50VA-120-50

3

13,14

27,28

13,14

27,28

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R

Input capacitance Cies V

CES VGE = 0V, VCE = 1200V - - 1.0 mA

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 50mA 6.0 6.5 7.0 V

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

g (int) - - 4 - Ω

VGE = 15V
IC = 50A

VGE = 15V
IC = 50A

CE

= 10V, VGE = 0V, f = 1MHz - 4.2 - nF

Tj=25°C - 2.15 2.60

Tj=125°C - 2.50 -

Tj=150°C - 2.55 -

Tj=25°C - 1.85 2.30

Tj=125°C - 2.20 -

Tj=150°C - 2.25 -

ton

V

Inverter

Turn-on time

tr - 0.09 0.60

tr (i) - 0.03 -

Turn-off time

toff - 0.53 1.00

tf - 0.06 0.30

V

F

(terminal)

Forward on voltage

V

F

(chip)

Reverse recovery time trr I

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

CC = 600V

IC = 50A
VGE = +15 / -15V
RG = 15Ω

Tj=25°C - 2.00 2.45

F = 50A

I

Tj=125°C - 2.15 -

Tj=150°C - 2.10 -

Tj=25°C - 1.70 2.15

F = 50A

I

Tj=125°C - 1.85 -

Tj=150°C - 1.80 -

F = 50A - - 0.35 µs

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.39 1.20

Units

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.54

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal c ompound.

Characteristics

min. typ. max.

Equivalent Circuit Schematic

[ Thermistor ][ Inverter ]

15,16

19,20

15,16

17 18

17 18

25,26

25,26

1

1
2

2

3

3

4

4

5

5
6

6

U V W

U V W

23,24

23,24 21,22

7

7
8

8

10

10

11

11
12

12

9

9

Units

°C/WInverter FWD - - 0.73

2

6MBI50VA-120-50

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

C / chip

Tj= 25

100

=20V 15V

V

GE

80

[ A ]

C

60

40

C o l l e c t o r c u r r e n t : I

20

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE

12V

[V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

=15V / chip

V

GE

100

80

[ A ]

C

60

40

Tj=25

o

C

125

150

o

C

o

C

10V

8V

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

Tj= 150

100

80

[ A ]

C

60

40

C o l l e c t o r c u r r e n t : I

20

0

0 1 2 3 4 5

Collector-Emitter voltage: V

V

GE

C / chip

=20V

15V

CE

12V

10V

8V

[V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

8

[ V ]

C E

6

4

Tj= 25

o

C / chip

C o l l e c t o r c u r r e n t : I

20

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

=0V, f= 1MHz, Tj= 25 o C

V

GE

10.0

Cies

1.0

Coes

C a p a c i t a n c e : C i e s , C o e s , C r e s [ n F ]

0.1
0 10 20 30 40

Collector - Emitter voltage: V

Cres

CE

[V]

2

C o l l e c t o r - E m i t t e r v o l t a g e : V

0

5 10 15 20 25

Gate - Emitter voltage: V

GE

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=600V ， Ic=50A ， Tj= 25°C

[ 2 0 0 V / d i v ]

C o l l e c t o r - E m i t t e r v o l t a g e : V

[ 5 V / d i v ]

G E

C E

G a t e - E m i t t e r v o l t a g e : V

V

CE

0

-500 0 500

Gate charge: Qg [nC]

Ic=100A
Ic=50A
Ic= 25A

[V]

V

GE

3

6MBI50VA-120-50

5

toff

tr

tf

toff

ton

ton

tr

tf

ton

tr

tf

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 125°C

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 20 40 60 80 100 120

Collector current: IC [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

Vcc=600V，Ic=50A，VGE=±15V，Tj= 125°C

10000

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V，VGE=±15V，Rg=15Ω，Tj= 150°C

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 20 40 60 80 100 120

Collector current: I

C

[A]

[ Inverter ]

Switching loss vs. Collector current (typ.)

Vcc=600V，VGE=±15V，Rg=15Ω

12

10

Eon(150oC)

Eon(125

o

C)

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

10 100

Gate resistance : Rg [Ω]

[ Inverter ]

Switching loss vs. gate resistance (typ.)

Vcc=600V，Ic=50A，VGE=±15V

10

8

6

4

2

Eon(150oC)

o

Eon(125

Eoff(150
Eoff(125

Err(150
Err(125

C)

o

C)

o

C)

o

C)

o

C)

8

6

4

2

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0 25 50 75 100 125

Collector current: IC [A]

[ Inverter ]

Reverse bias safe operating area (max.)

+VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj = 150°C

125

100

75

RBSOA

50

Collector current: IC [A]

25

(Repetitive pulse)

Eoff(150
Eoff(125

Err(150
Err(125

o

C)

o

C)

o

C)

o

C)

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

10 100

Gate resistance : Rg [Ω]

0

0 200 400 600 800 1000 1200 1400 1600

Collector-Emitter voltage : V

[V]

CE

(Main terminals)

4

6MBI50VA-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Forward current vs. forward on voltage (typ.)

100

80

60

40

F o r w a r d c u r r e n t : I F [ A ]

20

0

0 1 2 3 4

Tj=25°C

Tj=150°C

chip

Tj=125°C

Forward on voltage : V Forward current : I

Transient thermal resistance (max.)

10.00

[V]

F

[ Inverter ]

Reverse recovery characteristics (typ.)

Vcc=600V

1000

100

10

R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]

R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]

1

0 50 100 150

， VGE=±15V ， Rg=15Ω

trr(150°C)
trr(125°C)
Irr(150°C)

Irr(125°C)

[A]

F

[ Thermistor ]

Temperature characteristic (typ.)

100

1.00

0.10

n 1 2 3 4

n

τ

r

n

T h e r m a l r e s i s t a n s e : R t h ( j - c ) [ ° C / W ]

0.01

0.001 0.010 0.100 1.000

[°C/W] FWD 0.07830 0.19852 0.28045 0.17273

Pulse width : Pw [sec]

Outline Drawings, mm

FWD[Inverter]

IGBT[Inverter]

[sec] 0.0023 0.0301 0.0598 0.0708

IGBT 0.05792 0.14685 0.20746 0.12777

10

1

R e s i s t a n c e : R [ k Ω ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Weight:180g(typ.)

5

6MBI50VA-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product spec ications, characteristics, data, materials, and structures as of July 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade sec ret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric C o., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property r ights which may arise from the use of the applications descr ibed herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliabilit y, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safet y measures to prevent
the equipment from causing a physic al injury, re, or other problem if any of the products become fault y. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliabilit y
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obt ain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incor porated in the equipment
becomes faulty.

• Transportation equipment (mounted on c ars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-of f feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

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• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reser ved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injur y caused by any use of the products not in accordance with instructions
set forth herein.

6

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IGBT Modules

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Information

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2

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3

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2

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3

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4

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7

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8

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9

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10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

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2015-10