Fuji Electric 6MBI450V-170-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI450V-170-50

IGBT Modules

IGBT MODULE (V series)
1700V / 450A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage VCES 1700 V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation P

Junction temperature T

Operating junction temperature
(under switching conditions)

Case temperature T

Storage temperature T

Isolation voltage

Screw torque

Note *1: All terminals should be connec ted together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be c onnected together and shorted to base plate during the test.
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Note *4: Recommendable Value : 3.5-4.5 Nm (M6)

Between terminal and copper base (*1)

Between thermistor and others (*2)

Mounting (*3) - 3.5

Terminals (*4) - 4.5

GES ±20 V

C=25°C 600

C Continuous

I

I

C pulse 1ms 900

-I

C 450

-I

C pulse 1ms 900

C 1 device 2500 W

j 175

T

jop 150

C 125

stg -40 ~ 125

Viso AC : 1min. 3400 VAC

T

T

C=100°C 450

Maximum

ratings

Units

A

°C

N m

1

7865a

MARCH 2015

6MBI450V-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 3.0 mA

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R

Input capacitance C

Inverter

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

GES VCE = 0V, VGE = ±20V - - 600 nA

GE (t h) VCE = 20V, IC = 450mA 6.0 6.5 7.0 V

T

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 1.67 - Ω

ies VCE

t

on

r - 400 -

t

t

r (i) - 100 -

t

off - 1300 -

t

f - 100 -

F

V
(terminal)

F

V
(chip)

rr IF = 450A - 250 - nsec

VGE = 15V
IC = 450A

VGE = 15V
IC = 450A

= 10V, VGE = 0V, f = 1MHz - 40 - nF

VCC = 900V
IC = 450A
VGE = ±15V
RG = 3.3Ω
LS = 80nH

GE = 0V, IF = 450A

V

GE = 0V, IF = 450A

V

j=25°C - 2.65 3.10

T

j=125°C - 3.10 -

T

j=150°C - 3.15 -

T

j=25°C - 2.00 2.45

T

j=125°C - 2.45 -

T

j=150°C - 2.50 -

j=25°C - 2.45 2.90

T

T

j=125°C - 2.75 -

T

j=150°C - 2.70 -

j=25°C - 1.80 2.25

T

T

j=125°C - 2.10 -

T

j=150°C - 2.05 -

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 900 -

Units

V

nsec

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*5) R

th( j-c)

th(c- f) with Thermal Compound - 0.0167 -

Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.

Inverter IGBT - - 0.06

Characteristics

min. typ. max.

Units

°C/WInverter FWD - - 0 .10

2

6MBI450V-170-50

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

1000

V

GE=20V 15V 12V

800

600

400

Collector current : IC [A]

200

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

GE=15V / chip

V

1000

T

j=125℃

800

10V

8V

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 150°C / chip

T

1000

15V

12V

800

GE= 20V

V

600

10V

400

Collector current : IC [A]

200

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

T

j= 25°C / chip

10

CE [V]

8

600

Tj=25℃

Tj=150℃

400

Collector current : IC [A]

200

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Inverter ]

Gate Capacitance vs. Collector-Emitter voltage (typ.)

V

GE=0V, f= 1MHz, Tj= 25°C

1000

100

C

ies

10

Cres

Gate Capacitance: Cies, Coes, Cres [nF]

1

Coes

0 10 20 30

Collector - Emitter voltage: V

CE [V]

6

4

2

Collector - Emitter voltage : V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Inverter ]

Dynamic gate charge (typ.)

CC=900V, IC=450A,Tj= 25°C

V

20

15

GE [V]

10

VCE

5

0

-5

-10

Gate - Emitter voltage: V

-15

VGE

-20

-5000 -2500 0 2500 5000

Gate charge: Q

G [nC]

C=900A

I

C=450A

I

C=225A

I

1000

800

600

400

200

0

-200

-400

-600

-800

-1000

Collector - Emitter voltage: VCE [V]

3

6MBI450V-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

10000

1000

100

10

Switching time : ton, tr, toff, tf [ nsec ]

10000

1000

on, tr, toff, tf [ nsec ]

100

[ Inverter ]

Switching time vs. Collector current (typ.)

VCC=900V, VGE=±15V, RG=3.3Ω, Tj= 25°C

toff

ton

tr

f

t

0 200 400 600 800 1000

Collector current: IC [A]

[ Inverter ]

Switching time vs. Gate resistance (typ.)

V

CC=900V, IC=450A, VGE=±15V, Tj= 125°C, 150°C

Tj=125oC
T

j=150

o

C

toff

ton

tr

f

t

V

CC=900V, VGE=±15V, RG=3.3Ω, Tj= 125°C, 150°C

10000

1000

100

10

Switching time : ton, tr, toff, tf [ nsec ]

0 200 400 600 800 1000

CC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C

V

400

300

200

on, Eoff, Err [mJ/pulse ]

100

[ Inverter ]

Switching time vs. Collector current (typ.)

Tj=125oC

o

C

j=150

T

toff

ton

f

t

tr

Collector current: IC [A]

[ Inverter ]

Switching loss vs. Collector current (typ.)

E

Tj=125oC

o

T

j=150

C

on

Eoff

Err

10

Switching time : t

1 10 100

Switching loss vs. Gate resistance (typ.)

CC=900V, IC=450A, VGE=±15V, Tj=125°C, 150°C

V

600

500

400

300

200

100

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0

1 10 100

Gate resistance : R

[ Inverter ]

Tj=125oC

o

C

T

j=150

Gate resistance : R

0

Switching loss : E

G [Ω] Collector current: IC [A]

0 200 400 600 800 1000

[ Inverter ]

Reverse bias safe operating area (max.)

GE=15V,-VGE ≤ 15V, RG ≥ 3.3Ω ,Tj = 150°C

+V

1200

Eon

1000

800

Collector current: IC [A]

600

400

Notice)
Please refer to page 7.
There is

definition of VCE.

off

E

200

Err

0

0 500 1000 1500 2000

Collector-Emitter voltage : V

G [Ω] (sense terminals)

CE [V]

4

6MBI450V-170-50

[INVERTER][INVERTER]

Forward current: I

[A]

Resistance : R [kΩ]

Reverse recovery current: I

[A]

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

1000

Tj=25℃

1000

Reverse Recovery Characteristics (typ.)

V

CC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C

rr

I

800

F

600

rr [nsec]

trr

100

400

T

j=125℃

200

j=150℃

T

0

0 1 2 3 4

Forward on voltage: VF [V]

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 200 400 600 800 1000

Forward current: IF [A]

[INVERTER]

Reverse Recovery Characteristics (typ.)

CC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C

V

1000

rr

I

Transient Thermal Resistance (max.)

1

rr

rr [nsec]

trr

0.1

100

Tj=125oC

j=150

Reverse recovery time: t

T

10

0 200 400 600 800 1000

Forward current: IF [A]

[THERMISTOR]

Temperature characteristic (typ.) T

100

o

C

0.01

Thermal resistanse: Rth(j-c) [°C/W]

τ [sec] 0.0023 0.0301 0.0598 0.0708

Rth IGBT 0.00644 0.01632 0.02305 0.01420

[°C/W] FW D 0.01073 0.02719 0.03842 0.02366

0.001

0.001 0.01 0.1 1

Pulse Width : PW [sec]

FWD safe operating area (max.)

j=150°C

1000

FWD

IGBT

900

800

10

700

Pmax=562kW

600

500

400

1

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

300

Reverse recovery current: Irr [A]

200

100

Notice)
Please refer to page 7.
There is definition of V

CE.

0

0 500 1000 1500 2000

Temperature [°C]

Collector-Emitter voltage: VCE [V]

5

6MBI450V-170-50

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

Weight: 950g (typ.)

]Thermistor [] Inverter [

6

6MBI450V-170-50

2,4,6

Denition of switching characteristics

Sence C1,3,5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching characteristics of VCE is defined

between Sense C1,3,5 and Sense E1,3,5

for Upper arm(U,V,W) and Sense E1,3,5

G1,3,5

VCE (terminal)
of Upper arm
(U,V,W)

and Sense E2,4,6 for Lower arm(X,Y,Z) .

7,8,9,10
11,12

Sence E1,3,5

Sence E2,4,6

1,3,5

G2,4,6

CE

(terminal)

V
of Lower arm
(X,Y,Z)

Please use these terminals whenever

measure spike voltage.

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be sure to

obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment

from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, ame

retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) •

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.

Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set

forth herein.

Measurement equipment

7

Technical Information

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2

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8

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2015-10