Fuji Electric 6MBI450V-170-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBI450V-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 450A / 6 in one package
Features
Compact Package
P.C.Board Mount
CE (sat)
Low V
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage VCES 1700 V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation P
Junction temperature T
Operating junction temperature
(under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
Screw torque
Note *1: All terminals should be connec ted together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be c onnected together and shorted to base plate during the test.
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Note *4: Recommendable Value : 3.5-4.5 Nm (M6)
Between terminal and copper base (*1)
Between thermistor and others (*2)
Mounting (*3) - 3.5
Terminals (*4) - 4.5
GES ±20 V
C=25°C 600
C Continuous
I
I
C pulse 1ms 900
-I
C 450
-I
C pulse 1ms 900
C 1 device 2500 W
j 175
T
jop 150
C 125
stg -40 ~ 125
Viso AC : 1min. 3400 VAC
T
T
C=100°C 450
Maximum
ratings
Units
A
°C
N m
1
7865a
MARCH 2015
6MBI450V-170-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 3.0 mA
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance C
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Resistance R
Thermistor
B value B T = 25 / 50°C 3305 3375 3450 K
GES VCE = 0V, VGE = ±20V - - 600 nA
GE (t h) VCE = 20V, IC = 450mA 6.0 6.5 7.0 V
T
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
G (int) - - 1.67 - Ω
ies VCE
t
on
r - 400 -
t
t
r (i) - 100 -
t
off - 1300 -
t
f - 100 -
F
V
(terminal)
F
V
(chip)
rr IF = 450A - 250 - nsec
VGE = 15V
IC = 450A
VGE = 15V
IC = 450A
= 10V, VGE = 0V, f = 1MHz - 40 - nF
VCC = 900V
IC = 450A
VGE = ±15V
RG = 3.3Ω
LS = 80nH
GE = 0V, IF = 450A
V
GE = 0V, IF = 450A
V
j=25°C - 2.65 3.10
T
j=125°C - 3.10 -
T
j=150°C - 3.15 -
T
j=25°C - 2.00 2.45
T
j=125°C - 2.45 -
T
j=150°C - 2.50 -
j=25°C - 2.45 2.90
T
T
j=125°C - 2.75 -
T
j=150°C - 2.70 -
j=25°C - 1.80 2.25
T
T
j=125°C - 2.10 -
T
j=150°C - 2.05 -
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 900 -
Units
V
nsec
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance (1device) R
Contact thermal resistance (1device) (*5) R
th( j-c)
th(c- f) with Thermal Compound - 0.0167 -
Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.
Inverter IGBT - - 0.06
Characteristics
min. typ. max.
Units
°C/WInverter FWD - - 0 .10
2
6MBI450V-170-50
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 25°C / chip
1000
V
GE=20V 15V 12V
800
600
400
Collector current : IC [A]
200
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
GE=15V / chip
V
1000
T
j=125℃
800
10V
8V
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
j= 150°C / chip
T
1000
15V
12V
800
GE= 20V
V
600
10V
400
Collector current : IC [A]
200
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
T
j= 25°C / chip
10
CE [V]
8
600
Tj=25℃
Tj=150℃
400
Collector current : IC [A]
200
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
[ Inverter ]
Gate Capacitance vs. Collector-Emitter voltage (typ.)
V
GE=0V, f= 1MHz, Tj= 25°C
1000
100
C
ies
10
Cres
Gate Capacitance: Cies, Coes, Cres [nF]
1
Coes
0 10 20 30
Collector - Emitter voltage: V
CE [V]
6
4
2
Collector - Emitter voltage : V
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
CC=900V, IC=450A,Tj= 25°C
V
20
15
GE [V]
10
VCE
5
0
-5
-10
Gate - Emitter voltage: V
-15
VGE
-20
-5000 -2500 0 2500 5000
Gate charge: Q
G [nC]
C=900A
I
C=450A
I
C=225A
I
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
Collector - Emitter voltage: VCE [V]
3
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