Fuji Electric 6MBI450U-170 Data Sheet
6MBI450U-170
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
1700V / 450A 6 in one-package
· Uninterruptible power supply
· Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector current IC
ICp
-IC
-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
between thermistor and others *2
Screw Torque Mounting *3 Terminals *4
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Rating
1700
±20
600
450
1200
900
450
900
2080
+150
-40 to +125
3400
3.5
4.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Inverter
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*5
Resistance
Thermistor
B value
*5:Biggest internal terminal resistance among arm.
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
VGE=0V, VCE=1700V
VCE=0V, VGE=±20V
VCE=20V, IC=450mA
VGE=15V, IC=450A
VCE=10V, VGE=0V, f=1MHz
VCC=900V
IC=450A
VGE=±15V
RG=1.1 Ω
VGE=0V
IF=450A
IF=450A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
– – 3.0
– – 600
4.5 6.5 8.5
– 2.50 3.00
– 2.85 –
– 2.05 2.55
– 2.40 –
–45 –
– 0.58 1.20
– 0.32 0.60
– 0.10 –
– 0.80 1.50
– 0.15 0.30
– 2.25 3.00
– 2.45 –
– 1.80 2.55
– 2.00 –
– 0.3 0.6
– 1.0 –
– 5000 –
465 495 520
3305 3375 3450
Thermal resistance characteristics
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Thermal resistance
Contact Thermal resistance
*6 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Rth(j-c)
Rth(j-c)
Rth(c-f)*6
IGBT
FWD
With thermal compound
– – 0.06
– – 0.10
– 0.0167 –
Unit
V
V
A
W
°C
VAC
N·m
°C/W
°C/W
°C/W
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
Κ
6MBI450U-170
Characteristics (Representative)
Collect or current vs. Collecto r-Emit ter voltage (ty p.)
Tj= 25°C / chip
1200
IGBT Module
Collect or current vs. Collecto r-Emit ter voltage (ty p.)
Tj= 125°C / chip
1200
1000
800
600
400
Collector current : Ic [A]
200
0
012345
Collect or current vs. Collecto r-Emit ter voltage (ty p.)
1200
1000
800
600
400
Collector current : Ic [A]
200
0
012345
VGE=20V 15V
Collector-Emit t er voltage : VCE [V]
VGE=15V / chip Tj=25°C / chip
Tj=25°C
12V
10V
9V
Tj=125°C
1000
800
600
400
Collector current : Ic [A]
200
0
012345
Collector-Emit t er voltage : VCE [V]
VGE =2 0 V
15V
10V
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Ic=900A
Ic=450A
Ic=225A
12V
9V
Collector-Emit t er voltage : VCE [V]
Cap acit ance vs. Collect or-Emitter voltage (t y p .) Dy namic Gat e charge (ty p.)
VGE=0V, f= 1M Hz, Tj= 25°C Vcc=900V, Ic=450A, Tj= 25°C
1000.0
100.0
10.0
1.0
Capacitance : Cies, Coes, Cres [ nF ]
0.1
0102030
Collector-Emit t er voltage : VCE [V]
Cies
Cres
Coe s
Gat e - E m it t er vo lt age : VGE [ V ]
Gate - Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
0 500 1000 1500 2000 2500
Gat e charge : Qg [ nC ]
VGE
VCE
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