R e v i s e d R e c o r d s
Date
July.-15 -’05 K. Yamada
Classi-
fication
Enactment
Ind. Content
Applied
date
Issued
Drawn Checked Checked Approved
T.Miyasaka
date
Revised characteristic s
Oct.-25-’05
Revision
a
VCE(sat) (P4/14)
O.Ikawa
K.YamadaS.Miyashita
Y.S eki
T.Miyasaka
MS5F6307
2
a
14
H04-004-06b
1. Outline Drawing ( Unit : mm )
6MBI300U4-170
2. Equivalent circuit
⑪ ⑨ ⑦
⑫ ⑩ ⑧
② ④ ⑥
① ③ ⑤
[Inverter]
MS5F6307
[Thermister]
[Thermistor]
3
a
14
H04-004-03a
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items Symbols Conditi ons
VCESCollector-Emitter voltage V
Gate-Emitter voltage
Ic
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6)
(*4) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting (*3)
Terminals (*4)
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Viso
-
Continuous
1ms
1ms
1 device
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maxim um
Rati ngs
1700
±20 VVGES
450
300
900
600
300
600
1385
150
-40 ~ +125
3400 VAC
3.5
4.5
Units
A
W
°C
N m
4. Electrical characterist ics ( at Tj= 25°C unless ot her wi se specifi ed)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip(*5)
Resistance R
Thermistor
B value B
(*5) Biggest internal terminal resistance among arm.
Symbo ls
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies VCE=10V,VGE=0V,f=1MHz
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Con ditions
VGE = 0V
VCE = 1700V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 300mA
VGE=15V
Ic = 300A
Vcc = 900V
Ic = 300A
VGE=±15V
Rg = 1.5 Ω
VGE=0V
IF = 300A
T=25oC
T=100oC
T=25/50oC
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C -
Tj=125°C
MS5F6307
Characteristics
min.
-
- -
4.5
- 2.70 2.85
- 3.10
- 2.25 2.40
-
-
-
- 0.05
- 0.55
-
-
-
-
-
- 1.00
- 5000 -
465 495 520
3305 3375 3450 K
-
6.5
a
2.65 --
0.62
0.39
0.09 0.30
2.10 2.45
1.80 2.15
2.00
0.18 0.6
max.typ.
3.0 mA
600
8.5 V
aa
1.20
0.60
1.50
Uni ts
-
- nF28
-
-2.30
-
-
mΩR lead
4
14
nA
V
μs
V
μsIF = 300A
Ω
a
H04-004-03a
5. Thermal resi stance characteristics
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
Items Symbo ls Con ditions
Thermal resistance(1device) Rth(j-c)
Contact Thermal resistance
(1device) (*6)
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6.Recommend way of m odule m ount ing to Heat sink Clam ping
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)→(5)→(6)→(7)→(8)
(2) Final :Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)→(8)→(7)→(6)→(5)
Rth(c-f) with Thermal Compound
IGBT
FWD
Characteristics
min. typ. max.
-
- - 0.15
-
- 0.09
0.0167 -
Uni ts
°C/W
(7) (3) (1) (5)
7. Indi cation on module
Lo go of product ion
Lo t.No. Place of manufacturing (code)
Mounting holes
Heat sink
(8)(4)(2)(6)
Module
6MBI300U4-170
300A 1700V
8.Appl icable category
This specification is applied to IGBT Module named 6MBI300U4-170 .
9.Sto rage and t ransportation notes
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
・
MS5F6307
5
14
H04-004-03a
a