Fuji Electric 6MBI225U4-120 SPECIFICATION
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT MODULE
6MBI225U4-120
MS5F 6021
Jan. 20 ’05
Jan. 20 ’05
S.Miyashita
T.Miyasaka
K.Yamada
Y.Seki
MS5F6021
1
14
H04-004-07b
R e v i s e d R e c o r d s
Date
Jan.-20 -’05
Classi-
fication
Enactment
Ind. Content
Applied
date
Issued
date
Drawn Checked Checked Approved
T.Miyasaka
K. Yamada
Y.Seki
MS5F6021
2
14
H04-004-06b
1. Outline Drawing ( Unit : mm )
6MBI225U4-120
2. Equivalent circuit
⑪ ⑨ ⑦
⑫ ⑩ ⑧
② ④ ⑥
① ③ ⑤
[Inverter]
MS5F6021
[Thermister]
[Thermistor]
3
14
H04-004-03a
Storage temperature
Screw
Tj=125
o
C
VCE(sat)
3. Absolute Maximu m Rating s ( at Tc= 25
o
C un less otherwi se specifi ed )
Maxim um
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Tj=125
o
C
VCE(sat)
Tj=25
o
C
4. Electrical characteristics ( at Tj = 25
o
C un less otherwi se specifi ed )
Tj=25
o
C
Tc=25
o
C
Isolation
typ.
max.
Characteri st ics
min.
VF
Tj=25
o
C
Tj=125
o
C
VF
Tj=125
o
C
Tj=25
o
C
Items
T=25/50
o
C
T=100
o
C
T=25
o
C
Zero gate voltage
Gate-Emitter
Gate-Emitter
Lead resistance,
Collector-Emitter voltage
Gate-Emitter voltage
Symbol s Conditi ons
VCES 1200
VGES
Ic Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation 1 device
Junction temperature
Pc
Tj
Tstg
voltage
Torque
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting (*3)
Terminals (*4)
Viso AC : 1min. 2500 VAC
-
Rati ngs
±20
300
225
600
450
225
450
1040
+150
-40 to +125
3.5
4.5
Units
V
V
A
W
o
C
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
(*4) Recommendable Value : 3.5 to 4.5 Nm (M6)
Items Condit ionsSymbols
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=225mA
collector current
leakage current
threshold voltage
ICES - - 3.0
IGES
VGE(th)
Ic=225A
Collector-Emitter
(terminal)
VGE=15V
saturation voltage
(chip)
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
ton Vcc=600V - 0.32 1.20
Turn-on time
Inverter
tr Ic=225A - 0.10
tr(i) VGE=±15V - 0.03 -
Turn-off time
toff RG=3.0Ω tf - 0.07 0.30
IF=225A
Forward on voltage
(terminal)
VGE=0V
(chip)
Reverse recovery time
terminal-chip (*5)
Resistance
B value B
Thermistor
trr
R lead 1.00
R
IF=225A -
(*5) Biggest internal terminal resistance among arm.
- - 600
4.5
6.5 8.5
- 2.15 2.30
-
2.35
- 1.90 2.05
-
2.10 25 - nF
0.60
0.41 1.00
- 1.90 2.05
- 2.00 -
- 1.65 1.80
-
1.75 -
- 0.35
-
-
5000
465 495 520
3305
3375 3450 K
Units
mA
nA
V
V
us
V
us
- mΩ
-
Ω
MS5F6021
4
14
H04-004-03a
6.Recommend way of m odule m ount ing to Heat sink Clamping
(1) Initial : 1/3 specified torque, sequence (1)
(2)→(3)→(4)→(5)→(6)→(7)→(8)
(2) Final
Full specified torque (3.5 Nm),sequence(4)
(3)→(2)→(1)→(8)→(7)→(6)→(5)
Lo go of product ion
Lo t.No.
Place of manufacturing (code)
9. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
8. Appl icable category
225A 1200V
Contact Thermal resistance
5. Thermal resi stance characteristics
Items Symbols Condi tions Units
min.
typ.
max.
Characteri st ics
7. Indi cation on module
Thermal resistance(1device)
(1 device) (*6)
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
：
Rth(j-c)
Rth(c-f) with Thermal Compound
IGBT -
→
→
- 0.12
- -
-
0.0167
0.20FWD
o
C/W
-
(7) (3) (1) (5)
Mounting ho les
Heat sink
(8)(4)(2)(6)
Module
6MBI225U4-120
This specification is applied to IGBT-Module named 6MBI225U4-120.
•
Store modules in a place with few temperature changes in order to avoid condensation on the
•
module surface.
Avoid exposure to corrosive gases and dust.
•
Avoid excessive external force on the module.
•
Store modules with unprocessed terminals.
•
Do not drop or otherwise shock the modules when transporting.
•
MS5F6021
5
14
H04-004-03a
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