Fuji Electric 6MBI10GS-060 Data Sheet
6MBI10GS-060
600V / 10A 6 in one-package
Features
· Compact Single in -line package
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector Continuous IC
current 1ms IC pulse
-IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage Vis
Screw torque Mounting *1
*1 : Recommendable value : 1.3 to 1.7 N·m (M4)
Rating
600
±20
10
20
10
20
45
+150
-40 to +125
AC 2000 (1min.)
1.7
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
IGBT Modules
Equivalent Circuit Schematic
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
保守廃止予定機種
Not recommend for new design.
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
– – 1.0
– – 0.1
5.5 – 8.5
– – 2.8
– 650 –
– 150 –
– 36 –
– – 1.2
– – 1.0
– – 1.0
– – 0.35
– – 3.0
– – 0.3
VGE=0V , VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=10A
VGE=±15V
RG=220ohm
IF=10A, VGE=0V
IF=10A, -di/dt=30A/µs, VGE=-10V
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*2
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
– – 2.78
– – 4.5
– 0.06 –
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
6MBI10GS-060
Characteristics (Representative)
IGBT Module
Collector current vs. Collector-Emitter voltage
Tj=25°C
20
18
16
14
12
10
8
6
Collector current : Ic [A]
4
2
0
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
Collector current vs. Collector-Emitter voltage
Tj=125°C
20
18
16
14
12
10
8
6
Collector current : Ic [A]
4
2
0
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
Collector-Emitter voltage : VCE [V]
2
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
保守廃止予定機種
Switching time vs. Collector current
Vcc=300V, RG=220 ohm, VGE=±15V, Tj=25°C
1000
100
Not recommend for new design.
8
6
4
Collector-Emitter voltage : VCE [V]
2
0
0 5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=220 ohm, VGE=±15V, Tj=125°C
1000
100
Switching time : ton, tr, toff, tf [n sec.]
10
0 2 4 6 8 10 12 14 16
Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
10
0 2 4 6 8 10 12 14 16
Collector current : Ic [A]
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