Fuji Electric 6MBI100VB-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI100VB-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 100A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless other wise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 520 W

Junction temperature Tj 175

Operating junciton temperature
(under switching conditions)

Case temperature Tc 125

Storage temperature Tstg -40 ~ +125

Isolation voltage

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)

Between terminal and copper base (*1)
Between thermistor and others (*2)

CES 1200 V

GES ±20 V

Ic Continuous Tc=100°C 100

Ic pulse 1ms Tc=80°C 200

-Ic 100

-Ic pulse 1ms 200

Tjop 150

Viso AC : 1min. 2500 VAC

Maximum

ratings

Units

°C

A

1

7175b

JULY 2015

6MBI100VB-120-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R

Input capacitance Cies V

CES VGE = 0V, VCE = 1200V - - 1.0 mA

GES VCE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

g (int) - - 7.5 - Ω

VGE = 15V
IC = 100A

VGE = 15V
IC = 100A

CE

= 10V, VGE = 0V, f = 1MHz - 9.1 - nF

Tj=25°C - 2.30 2.75

Tj=125°C - 2.60 -

Tj=150°C - 2.65 -

Tj=25°C - 1.75 2.20

Tj=125°C - 2.05 -

Tj=150°C - 2.10 -

ton

V

Inverter

Turn-on time

tr - 0.09 0.60

tr (i) - 0.03 -

Turn-off time

toff - 0.53 1.00

tf - 0.06 0.30

V

F

(terminal)

Forward on voltage

V

F

(chip)

Reverse recovery time trr I

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

CC = 600V

IC = 100A
VGE = +15 / -15V
RG = 1.6Ω

Tj=25°C - 2.25 2.70

F = 100A

I

Tj=125°C - 2.40 -

Tj=150°C - 2.35 -

Tj=25°C - 1.70 2.15

F = 100A

I

Tj=125°C - 1.85 -

Tj=150°C - 1.80 -

F = 100A - - 0.35 µs

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.39 1.20

Units

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.29

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

Characteristics

min. typ. max.

Equivalent Circuit Schematic

[ Thermistor ] [ Inverter ]

30,31,32

33,34,35

1
2

3

4

5
6

U V W

27,28,29

7
8

9

10

11
12

16,17,18

21,22,23 24,25,26

13,14,15

19 20

Units

°C/WInverter FWD - - 0.44

2

6MBI100VB-120-50

Collector current vs. Collector-Emitter voltage (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

10V

8V

12V

10V

8V

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Tj= 25 o C / chip

200

150

100

50

Collector current : IC [A]

0

0 1 2 3 4 5

V

GE=20V 15V

Collector-Emitter voltage: VCE [V]

[ Inverter ]

VGE=15V / chip

200

Tj=25°C 150°C

150

125°C

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

Tj= 150

200

15V

150

100

50

Collector current : IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: V

C / chip

VGE=20V

CE [V]

[ Inverter ]

o

C / chip

Tj= 25

8

CE [V]

6

100

50

Collector current : IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

=0V, f= 1MHz, Tj= 25 o C

GE

100.0

10.0

1.0

Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30 40

Cies

Coes

Cres

4

2

Collector - Emitter voltage : V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=600V , Ic=100A , Tj= 25°C

V

CE

GE [5V/div]

0

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

-1000 0 1000

Ic=200A
Ic=100A

Ic= 50A

V

GE

Collector - Emitter voltage: VCE [V]

Gate charge: Qg [nC]

3

6MBI100VB-120-50

5

S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J / p u l s e ]

S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J / p u l s e ]

(Repetitive pulse)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

10

0 50 100 150 200 250

GE=±15V, RG=1.6Ω, Tj= 125°C

Collector current: I C [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

Vcc=600V, Ic=100A, V

10000

GE=±15V, Tj= 125°C

toff

ton

tr

tf

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

10

0 50 100 150 200 250

GE=±15V, RG=1.6Ω, Tj= 150°C

Collector current: I

C

[A]

[ Inverter ]

Switching loss vs. Collector current (typ.)

Vcc=600V, V

30

GE=±15V, RG=1.6Ω

toff

ton

tr

tf

Eon(150°C)

Eon(125°C)

1000

100

S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]

10

0.1 1.0 10.0 100.0

Gate resistance : R

[ Inverter ]

Switching loss vs. gate resistance (typ.)

Vcc=600V, Ic=100A, V

30

20

10

0

0 1 10 100

Gate resistance : RG [Ω]

toff

ton

tr

tf

G [Ω]

GE=±15V

Eon(150°C)

Eon(125°C)

Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)

20

Eoff(150°C)
Eoff(125°C)
Err(150°C)

10

0

0 50 100 150 200 250

Err(125°C)

Collector current: I C [A]

[ Inverter ]

Reverse bias safe operating area (max.)

GE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj = 150°C

+V

250

200

150

RBSOA

100

50

C o l l e c t o r c u r r e n t : I C [A]

0

0 200 400 600 800 1000 1200 1400 1600

Collector-Emitter voltage : V

CE

[V]

(Main terminals)

4

6MBI100VB-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Forward current vs. forward on voltage (typ.)

chip

200

150

100

50

F o r w a r d c u r r e n t : I F [ A ]

0

0 1 2 3 4

Tj=25°C

Tj=150°C

Tj=125°C

Forward on voltage : V

Transient thermal resistance (max.)

10.00

n 1 2 3 4

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.03111 0.07886 0.11141 0.06862

n

[°C/W] FWD 0.04719 0.11966 0.16904 0.10411

F

[V]

[ Inverter ]

Reverse recovery characteristics (typ.)

Vcc=600V, V

1000

100

R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]

R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]

10

0 50 100 150 200 250 300

GE=±15V, RG=1.6Ω

Forward current : I

Irr(150°C)
Irr(125°C)
trr(150°C)
trr(125°C)

[A]

F

[ Thermistor ]

Temperature characteristic (typ.)

100

1.00

0.10

T h e r m a l r e s i s t a n s e : R t h ( j - c ) [ ° C / W ]

0.01

0.001 0.010 0.100 1.000

Pulse width : Pw [sec]

Outline Drawings, mm

FWD[Inverter]

IGBT[Inverter]

10

1

R e s i s t a n c e : R [ k Ω ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Weight:300g(typ.)

5

6MBI100VB-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog c ontains the product specications, characteristics, data, materials, and str uctures as of July 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric C o., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual propert y rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is rec ommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • C ommunications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Elec trical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to cont act Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

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• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

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• Submarine repeater equipment

7. Copyright ©1996 -2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Elec tric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

6

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2015-10