Fuji Electric 6MBI100VB-120-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBI100VB-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 100A / 6 in one package
Features
Compact Package
P.C.Board Mount
CE (sat)
Low V
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless other wise specied)
Items Symbols Conditions
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation Pc 1 device 520 W
Junction temperature Tj 175
Operating junciton temperature
(under switching conditions)
Case temperature Tc 125
Storage temperature Tstg -40 ~ +125
Isolation voltage
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)
Between terminal and copper base (*1)
Between thermistor and others (*2)
CES 1200 V
GES ±20 V
Ic Continuous Tc=100°C 100
Ic pulse 1ms Tc=80°C 200
-Ic 100
-Ic pulse 1ms 200
Tjop 150
Viso AC : 1min. 2500 VAC
Maximum
ratings
Units
°C
A
1
7175b
JULY 2015
6MBI100VB-120-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance Cies V
CES VGE = 0V, VCE = 1200V - - 1.0 mA
GES VCE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
g (int) - - 7.5 - Ω
VGE = 15V
IC = 100A
VGE = 15V
IC = 100A
CE
= 10V, VGE = 0V, f = 1MHz - 9.1 - nF
Tj=25°C - 2.30 2.75
Tj=125°C - 2.60 -
Tj=150°C - 2.65 -
Tj=25°C - 1.75 2.20
Tj=125°C - 2.05 -
Tj=150°C - 2.10 -
ton
V
Inverter
Turn-on time
tr - 0.09 0.60
tr (i) - 0.03 -
Turn-off time
toff - 0.53 1.00
tf - 0.06 0.30
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time trr I
Resistance R
Thermistor
B value B T = 25 / 50°C 3305 3375 3450 K
CC = 600V
IC = 100A
VGE = +15 / -15V
RG = 1.6Ω
Tj=25°C - 2.25 2.70
F = 100A
I
Tj=125°C - 2.40 -
Tj=150°C - 2.35 -
Tj=25°C - 1.70 2.15
F = 100A
I
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
F = 100A - - 0.35 µs
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.39 1.20
Units
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.29
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
Characteristics
min. typ. max.
Equivalent Circuit Schematic
[ Thermistor ] [ Inverter ]
30,31,32
33,34,35
1
2
3
4
5
6
U V W
27,28,29
7
8
9
10
11
12
16,17,18
21,22,23 24,25,26
13,14,15
19 20
Units
°C/WInverter FWD - - 0.44
2
6MBI100VB-120-50
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10V
8V
12V
10V
8V
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Tj= 25 o C / chip
200
150
100
50
Collector current : IC [A]
0
0 1 2 3 4 5
V
GE=20V 15V
Collector-Emitter voltage: VCE [V]
[ Inverter ]
VGE=15V / chip
200
Tj=25°C 150°C
150
125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
o
Tj= 150
200
15V
150
100
50
Collector current : IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: V
C / chip
VGE=20V
CE [V]
[ Inverter ]
o
C / chip
Tj= 25
8
CE [V]
6
100
50
Collector current : IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
=0V, f= 1MHz, Tj= 25 o C
GE
100.0
10.0
1.0
Capacitance: Cies, Coes, Cres [nF]
0.1
0 10 20 30 40
Cies
Coes
Cres
4
2
Collector - Emitter voltage : V
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V , Ic=100A , Tj= 25°C
V
CE
GE [5V/div]
0
Gate - Emitter voltage: V
Collector - Emitter voltage: VCE [200V/div]
-1000 0 1000
Ic=200A
Ic=100A
Ic= 50A
V
GE
Collector - Emitter voltage: VCE [V]
Gate charge: Qg [nC]
3
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