Fuji Electric 6MBI100VA-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

6MBI100VA-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 100A / 6 in one package

Features

Compact Package

P.C.Board Mount

CE (sat)

Low V

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplier

Uninterruptible Power Supply

Industrial machines, such as welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 335 W

Junction temperature Tj 175

Operating junciton temperature
(under switching conditions)

Case temperature Tc 125

Storage temperature Tstg -40 to +125

Isolation voltage

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
between thermistor and others (*2)

CES 600 V

GES ±20 V

Ic Continuous Tc=80°C 100

Icp 1ms Tc=80°C 200

-Ic 100

-Ic pulse 1ms 200

Tjop 150

Viso AC : 1min. 2500 VAC

Maximum

ratings

Units

°C

A

1

7170b

MARCH 2014

6MBI100VA-060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

CES VGE = 0V, VCE = 600V - - 1.0 mA

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 100mA 6.2 6.7 7.2 V

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

VGE = 15V
IC = 100A

VGE = 15V
IC = 100A

Tj=25°C - 2.05 2.50

Tj=125°C - 2.35 -

Tj=150°C - 2.55 -

Tj=25°C - 1.60 2.05

Tj=125°C - 1.90 -

Tj=150°C - 2.10 -

Internal gate resistance Rg(int) - - 9 - Ω

Input capacitance Cies V

CE

= 10V, VGE = 0V, f = 1MHz - 6.4 - nF

ton

V

Inverter

Turn-on time

tr - 0.25 0.60

tr (i) - 0.07 -

Turn-off time

toff - 0.52 1.20

tf - 0.03 0.45

V

F

(terminal)

Forward on voltage

V

F

(chip)

Reverse recovery time trr I

Resistance R

Thermistor

B value B T = 25 / 50°C 3305 3375 3450 K

CC = 300V

IC = 100A
VGE = +15 / -15V
RG = 13Ω

Tj=25°C - 2.05 2.50

F = 100A

I

Tj=125°C - 1.95 -

Tj=150°C - 1.90 -

Tj=25°C - 1.60 2.05

F = 100A

I

Tj=125°C - 1.50 -

Tj=150°C - 1.45 -

F = 100A - - 0.35 µs

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.36 1.20

Units

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Inverter IGBT - - 0.45

Contact thermal resistance (1device) (*4) Rth(c-f ) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

Characteristics

min. typ. max.

Units

°C/WInverter FWD - - 0.80

2

6MBI100VA-060-50

15V

10V

8V

15V

12V

10V

8V

Coes

Cres

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage

o

C / chip

Tj= 25

200

150

100

50

Collector current: IC [A]

0

0 1 2 3 4 5

V

=20V

GE

Collector-Emitter voltage: VCE [V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

=15V / chip

V

GE

200

150

Tj=25°C

150°C

125°C

(typ.)

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

o

Collector current: IC [A]

Tj= 150

200

150

100

50

0

0 1 2 3 4 5

V

=20V

GE

Collector-Emitter voltage: V

C / chip

CE[V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

o

C / chip

Tj= 25

8

[ V ]

C E

6

100

50

Collector current: IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

=0V, f= 1MHz, Tj= 25 o C

GE

100.0

10.0

1.0

Cies

4

2

C o l l e c t o r - E m i t t e r v o l t a g e : V

0

5 10 15 20 25

Gate - Emitter voltage: V

[ Inverter ]

Dynamic gate charge (typ.)

Vcc=300V, Ic=100A, Tj= 25°C

[ 5 V / d i v ]

[ 2 0 0 V / d i v ]

G E

C E

V

V

CE

0

Ic=200A
Ic=100A
Ic= 50A

GE [V]

V

GE

Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30 40

Collector - Emitter voltage: VCE [V]

G a t e - E m i t t e r v o l t a g e :

C o l l e c t o r - E m i t t e r v o l t a g e : V

0080008-

Gate charge: Qg [nC]

3

6MBI100VA-060-50

5

toff

tr

tf

toff

ton

ton

tr

tf

ton

tr

tf

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=300V, VGE=±15V, Rg=13Ω, Tj= 125°C

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 50 100 150 200 250 300

Collector current: IC [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C

10000

1000

[ Inverter ]

Switching time vs. Collector current (typ.)

Vcc=300V, VGE=±15V, Rg=13Ω, Tj= 150°C

10000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

10

0 50 100 150 200 250 300

Collector current: I

[ Inverter ]

Switching loss vs. Collector curr

Vcc=300V ， VGE=±15V ， Rg=13Ω

8

7

6

5

C [A]

ent (typ.)

Eon(150°C)

Eon(125°C)

Eoff(150°C)
Eoff(125°C)

100

Switching time : ton, tr, toff, tf [ nsec ]

10

1.0 10.0 100.0 1000.0

Gate resistance : Rg [Ω]

[ Inverter ]

Switching loss vs. gate resistance (typ.)

Vcc=300V, Ic=100A, VGE=±15V

30

20

10

Eon(150°C)
Eon(125°C)

Eoff(150°C)

Eoff(125°C)

4

3

2

1

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

0 50 100 150 200

Collector current: IC [A]

[ Inverter ]

Reverse bias safe operating area (max.)

+VGE=15V,-VGE <= 15V, RG >= 13Ω ,Tj = 150°C

300

200

100

RBSOA
(Repetitive pulse)

Collector current: IC [A]

Err(150°C)

Err(125°C)

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

1 10 100 1000

Gate resistance : Rg [Ω]

Err(150°C)
Err(125°C)

0

0 100 200 300 400 500 600 700 800

Collector-Emitter voltage : VCE [V]

(Main terminals)

4

6MBI100VA-060-50

200

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ] [ Inverter ]

Reverse recovery characteristics (typ.) Forward current vs. forward on voltage (typ.)

chip Vcc=300V, VGE=±15V, Rg=13Ω

1000

150

100

Tj=150°C

50

Forward current : IF [A]

0

0 1 2 3 4 5

Forward on voltage : V

Transient thermal resistance (max.)

10.00

1.00

0.10

n 1 2 3 4

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.04827 0.12238 0.17288 0.10648

n

[°C/W] FW D 0.08581 0.21756 0.30734 0.18929

Tj=25°C

Tj=125°C

F [V]

FWD[Inverter]

IGBT[Inverter]

100

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

10

0 50 100 150 200 250 300

Forward current : I

[ Thermistor ]

Temperature characteristic (typ.)

100

10

1

Resistance : R [kΩ]

Irr(150°C)

Irr(125°C)

trr(150°C)

trr(125°C)

F [A]

Thermal resistanse : Rth(j-c) [ °C/W ]

0.01

0.001 0.010 0.100 1.000

Pulse width : Pw [sec]

Outline Drawings(Unit:mm)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Weight: 180g(typ.)

5

6MBI100VA-060-50

Equivalent Circuit

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Thermistor ] [ Inverter ]

19,20

15,16

13,14

17 18

25,26

27,28

1
2

3
4

5
6

U V W

23,24 21,22

7
8

9

10

11
12

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and str uctures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either

express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warrant y, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications descr ibed herein.

3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliabilit y, a small percentage of semic onductor

products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, re, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has

normal reliabilit y requirements.

• Computers • OA equipment • Communications equipment (ter minal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed

below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. W hen using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto -shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

• Medical equipment

6. Do not use products in this Cat alog for the equipment requiring str ict reliability such as the following and equivalents to strategic

equipment (without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reser ved.
No part of this Catalog may be reproduced in any for m or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.

8. If you have any question about any por tion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before

using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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www.fujielectric.co.jp/products/semiconductor/

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Information

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1

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2

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3

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4

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8

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1

Semiconductors General Catalog

2

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3

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4

Technical Documents

5

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6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

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9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
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半导体综合目录

2

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4

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5

安装说明书

6

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7

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2015-10