Fuji Electric 6MBI100VA-060-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
6MBI100VA-060-50
IGBT Modules
IGBT MODULE (V series)
600V / 100A / 6 in one package
Features
Compact Package
P.C.Board Mount
CE (sat)
Low V
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation Pc 1 device 335 W
Junction temperature Tj 175
Operating junciton temperature
(under switching conditions)
Case temperature Tc 125
Storage temperature Tstg -40 to +125
Isolation voltage
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5 -3.5 Nm (M5)
between terminal and copper base (*1)
between thermistor and others (*2)
CES 600 V
GES ±20 V
Ic Continuous Tc=80°C 100
Icp 1ms Tc=80°C 200
-Ic 100
-Ic pulse 1ms 200
Tjop 150
Viso AC : 1min. 2500 VAC
Maximum
ratings
Units
°C
A
1
7170b
MARCH 2014
6MBI100VA-060-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
CES VGE = 0V, VCE = 600V - - 1.0 mA
GES VGE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 100mA 6.2 6.7 7.2 V
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
VGE = 15V
IC = 100A
VGE = 15V
IC = 100A
Tj=25°C - 2.05 2.50
Tj=125°C - 2.35 -
Tj=150°C - 2.55 -
Tj=25°C - 1.60 2.05
Tj=125°C - 1.90 -
Tj=150°C - 2.10 -
Internal gate resistance Rg(int) - - 9 - Ω
Input capacitance Cies V
CE
= 10V, VGE = 0V, f = 1MHz - 6.4 - nF
ton
V
Inverter
Turn-on time
tr - 0.25 0.60
tr (i) - 0.07 -
Turn-off time
toff - 0.52 1.20
tf - 0.03 0.45
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time trr I
Resistance R
Thermistor
B value B T = 25 / 50°C 3305 3375 3450 K
CC = 300V
IC = 100A
VGE = +15 / -15V
RG = 13Ω
Tj=25°C - 2.05 2.50
F = 100A
I
Tj=125°C - 1.95 -
Tj=150°C - 1.90 -
Tj=25°C - 1.60 2.05
F = 100A
I
Tj=125°C - 1.50 -
Tj=150°C - 1.45 -
F = 100A - - 0.35 µs
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.36 1.20
Units
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.45
Contact thermal resistance (1device) (*4) Rth(c-f ) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
Characteristics
min. typ. max.
Units
°C/WInverter FWD - - 0.80
2
6MBI100VA-060-50
15V
10V
8V
15V
12V
10V
8V
Coes
Cres
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage
o
C / chip
Tj= 25
200
150
100
50
Collector current: IC [A]
0
0 1 2 3 4 5
V
=20V
GE
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
=15V / chip
V
GE
200
150
Tj=25°C
150°C
125°C
(typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
o
Collector current: IC [A]
Tj= 150
200
150
100
50
0
0 1 2 3 4 5
V
=20V
GE
Collector-Emitter voltage: V
C / chip
CE[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
o
C / chip
Tj= 25
8
[ V ]
C E
6
100
50
Collector current: IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
=0V, f= 1MHz, Tj= 25 o C
GE
100.0
10.0
1.0
Cies
4
2
C o l l e c t o r - E m i t t e r v o l t a g e : V
0
5 10 15 20 25
Gate - Emitter voltage: V
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
[ 5 V / d i v ]
[ 2 0 0 V / d i v ]
G E
C E
V
V
CE
0
Ic=200A
Ic=100A
Ic= 50A
GE [V]
V
GE
Capacitance: Cies, Coes, Cres [nF]
0.1
0 10 20 30 40
Collector - Emitter voltage: VCE [V]
G a t e - E m i t t e r v o l t a g e :
C o l l e c t o r - E m i t t e r v o l t a g e : V
0080008-
Gate charge: Qg [nC]
3
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