Fuji Electric 2SK3927-01L, 2SK3927-01S, 2SK3927-01SJ Service Manual
2SK3927-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super F AP-G Series
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 250
VDSX 220
Continuous Drain Current ID 34
Pulsed Drain Current ID(puls] ±136
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 34
Non-Repetitive EAS 665.7
Maximum Avalanche Energy
Repetitive EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS /dt 20
Peak Diode Recovery dV/dt dV/dt 5
Peak Diode Recovery -di/dt -di/dt 100
Max. Power Dissipation PD 270
2.02
Operating and Storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current IDSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal characteristics
Item Symbol Test Conditions
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
-55 to +150
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
VDS=250V VGS=0V
Tch=125°C
VDS=200V VGS=0V
VGS=±30V
VDS=0V
ID=17A VGS=10V
ID=17A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=48V ID=17A
VGS=10V
RGS=10 Ω
VCC=125V
ID=34A
VGS=10V
IF=34A VGS=0V Tch=25°C
IF=34A VGS=0V
-di/dt=100A/µs
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
A/µs
W
°C
°C
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
T c=25°C
T a=25°C
Tch=25°C
Outline Drawings (mm)
200406
See to P4
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=14A,L=5.71mH,
VCC=48V,RG=50Ω
<
=
E
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:I
Note *5:I
<
=
AS limited by maximum channel temperature
<
F -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
=
<
F -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
=
<
=
<
=
<
=
<
=
Min. Typ. Max. Units
250
3.0 5.0
25
2.0
100
85 110
13 26
1850 2800
220 330
21 32
20 30
19 29
56 85
19 29
56 85
20 30
19 29
1.00 1.50
140 250
0.5 1.25
V
V
µA
mA
nA
mΩ
S
pF
ns
nC
V
ns
µC
Min. Typ. Max. Units
0.463
75
°C/W
°C/W
1
2SK3927-01L,S,SJ
Characteristics
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
PD [W]
100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
Typical Output Characteristics
ID=f(VDS):80
100
90
80
70
60
50
ID [A]
40
30
20
10
0
0246810121416
µs pulse test,Tch=25°C
VGS=6V
VDS [V]
20V
10V
7.5V
7V
6.5V
Typical Transconductance
gfs=f(ID):80
100
µs pulse test,VDS=25V,Tch=25°C
10
ID[A]
1
0.1
0.01
012345678910
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
0.20
0.18
0.16
0.14
0.12
RDS(on) [ Ω ]
0.10
µs pulse test,Tch=25°C
VGS=6.5V
7.0V
7.5V
8V
10V
20V
10
gfs [S]
1
0.1
0.1 1 10 100
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=17A,VGS=10V
0.30
0.25
0.20
0.15
RDS(on) [ Ω ]
0.10
max.
typ.
0.08
0.06
0 102030405060708090
ID [A]
0.05
0.00
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2
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