FUJI ELECTRIC 2SK1280 Service Manual

查询2SK1280供应商
2SK1280
F-V Series
N-channel MOS-FET
500V 0,5Ω 18A 150W
>Features > Outline Drawing
-Include Fast Recovery Diode
-High Voltage
-Low Driving Power
-Motor Control
-Inverters
-Choppers
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit Drain-Source-Voltage V Continous Drain Current I Pulsed Drain Current I Continous Reverse Drain Current I Gate-Source-Voltage V Max. Power Dissipation P Operating and Storage Temperature Range T
T
DS D D(puls) DR GS D ch stg
-55 ~ +150 °C
500 V
18 A 72 A
18 A ±20 V 150 W 150 °C
Electrical Characteristics (T
-
=25°C), unless otherwise specified
C
Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V Gate Threshhold Voltage V Zero Gate Voltage Drain Current I
Gate Source Leakage Current I Drain Source On-State Resistance R Forward Transconductance g Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-On-Time t
Turn-Off-Time t
(ton=t
on
d(on)+tr
off (ton=td(off)+tf
)
)
Diode Forward On-Voltage V Reverse Recovery Time t
(BR)DSS ID GS(th) ID DSS VDS
GSS VGS DS(on) ID fs ID iss VDS oss VGS rss
t
d(on)
t
r ID
t
d(off)
t
f SD IF=IDR rr IF=IDR
=1mA VGS=0V =10mA V
=500V Tch=25°C
V
=0V
GS
=±20V VDS=0V =9A VGS=10V =9A VDS=25V
VGS=0V Tch=25°C
-dI
/dt=100A/µs Tch=25°C
F
DS=VGS
=25V
=0V
f=1MHz 150 220 pF
VCC=300V
=18A
VGS=10V
RGS=25
VGS=0V
500 V
2,1 3,0 4,0 V
10 500 µA
10 100 nA
0,35 0,5
8 15 S
2400 3600 pF
300 450 pF
35 50 ns 150 220 ns 450 650 ns 180 270 ns
0,85 1,6 V
150 200 ns
- Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R
R
th(ch-a) th(ch-c)
channel to air 35 °C/W channel to case 0,83 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
2SK1280
F-V Series
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
Typical Transfer Characteristics
Typical Drain-Source-On-State-Resistance vs. I
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
4
Typical Capacitance vs. V
Typical Input Charge
Forward Characteristics of Reverse Diode
Allowable Power Dissipation vs. T
Safe operation area
This specification is subject to change without notice!
500V 0,5Ω 18A 150W
> Characteristics
ch
1 2 3
[A]
D
I
VDS [V]
]
[
DS(ON)
R
4 5 6
ID [A]
DS
]
[
DS(ON)
R
Tch [°C]
D
[S]
fs
g
ID [A]
D
[A]
D
I
[V]
GS(th)
V
VGS [V]
Tch [°C]
ch
7 8 9
C [nF]
VDS [V]
[V]
DS
V
Qg [nC]
C
[V]
GS
V
[A]
F
I
VSD [V]
[K/W]
th(ch-c)
Z
Transient Thermal impedance
10 12 11
[W]
D
P
Tc [°C]
[A]
D
I
VDS [V]
t [s]
Loading...