FUJI ELECTRIC 2SK1278 F-V Service Manual
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2SK1278
F-V Series
N-channel MOS-FET
500V 1,1Ω 10A 100W
>Features > Outline Drawing
-Include Fast Recovery Diode
-High Voltage
-Low Driving Power
>Applications
-Motor Control
-Inverters
-Choppers
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
Continous Drain Current I
Pulsed Drain Current I
Continous Reverse Drain Current I
Gate-Source-Voltage V
Max. Power Dissipation P
Operating and Storage Temperature Range T
T
DS
D
D(puls)
DR
GS
D
ch
stg
-55 ~ +150 °C
500 V
10 A
40 A
10 A
±20 V
100 W
150 °C
Electrical Characteristics (T
-
=25°C), unless otherwise specified
C
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
Gate Threshhold Voltage V
Zero Gate Voltage Drain Current I
Gate Source Leakage Current I
Drain Source On-State Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On-Time t
Turn-Off-Time t
(ton=t
on
d(on)+tr
off (ton=td(off)+tf
)
)
Diode Forward On-Voltage V
Reverse Recovery Time t
(BR)DSS ID
GS(th) ID
DSS VDS
GSS VGS
DS(on) ID
fs ID
iss VDS
oss VGS
rss
t
d(on)
t
r ID
t
d(off)
t
f
SD IF=IDR
rr IF=IDR
=1mA VGS=0V
=10mA V
=500V Tch=25°C
V
=0V
GS
=±20V VDS=0V
=5A VGS=10V
=5A VDS=25V
VGS=0V Tch=25°C
-dI
/dt=100A/µs Tch=25°C
F
DS=VGS
=25V
=0V
f=1MHz 75 110 pF
VCC=300V
=10A
VGS=10V
RGS=25 Ω
VGS=0V
500 V
2,1 3,0 4,0 V
10 500 µA
10 100 nA
0,8 1,1
4 8 S
1100 1600 pF
140 210 pF
25 40 ns
60 90 ns
200 300 ns
90 140 ns
0,95 1,8 V
150 200 ns
Ω
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
R
th(ch-a)
th(ch-c)
channel to air 35 °C/W
channel to case 1,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
2SK1278
F-V Series
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
Typical Transfer Characteristics
→
→
→
Typical Drain-Source-On-State-Resistance vs. I
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
4
→
→
→
Typical Capacitance vs. V
Typical Input Charge
Forward Characteristics of Reverse Diode
→
→
→
Safe operation area
→
→
This specification is subject to change without notice!
500V 1,1Ω 10A 100W
> Characteristics
ch
↑ 1 ↑ 2 ↑ 3
[A]
D
I
VDS [V]
↑
]
Ω
[
DS(ON)
R
4 ↑ 5 ↑ 6
ID [A]
DS
]
Ω
[
DS(ON)
R
Tch [°C]
D
[S]
fs
g
ID [A]
D
[A]
D
I
[V]
GS(th)
V
VGS [V]
Tch [°C]
ch
↑ 7 ↑ 8 ↑ ↑ 9
C [nF]
VDS [V]
[V]
DS
V
Qg [nC]
[V]
GS
V
[A]
F
I
VSD [V]
↑
[K/W]
th(ch-c)
Z
Transient Thermal impedance
↑ 10 11
[A]
D
I
VDS [V]
t [s]
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