FUJI ELECTRIC 2SK1083-MR F-III Service Manual
2SK1083-MR
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
查询2SK1083供应商
N-channel MOS-FET
F-III Series
60V 0,22Ω 8A 20W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
Continous Drain Current I
Pulsed Drain Current I
Continous Reverse Drain Current I
Gate-Source-Voltage V
Max. Power Dissipation P
Operating and Storage Temperature Range T
T
DS
D
D(puls)
DR
GS
D
ch
stg
-55 ~ +150 °C
60 V
8 A
32 A
8 A
±20 V
20 W
150 °C
Electrical Characteristics (T
-
=25°C), unless otherwise specified
C
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
Gate Threshhold Voltage V
Zero Gate Voltage Drain Current I
(BR)DSSID
GS(th)
DSS
=1mA VGS=0V 60 V
ID=1mA V
DS=VGS
1,0 1,5 2,5 V
VDS=60V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current I
Drain Source On-State Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On-Time ton (ton=t
Turn-Off-Time t
off (ton=td(off)+tf
) t
d(on)+tr
) t
Diode Forward On-Voltage V
Reverse Recovery Time t
t
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
VGS=±20V VDS=0V 10 100 nA
ID=4A VGS=4V 0,22 0,35
ID=4A VGS=10V 0,15 0,22
Ω
Ω
ID=4A VDS=25V 3 6 S
VDS=25V 300 450 pF
VGS=0V 110 170 pF
f=1MHz 40 60 pF
VCC=30V 7 10 ns
ID=8A 30 45 ns
VGS=10V 50 75 ns
RGS=25Ω
20 30 ns
IF=2xIDR VGS=0V Tch=25°C 1,2 1,8 V
IF=IDR VGS=0V 50 ns
/dt=100A/µs Tch=25°C
-dI
F
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
R
th(ch-a)
th(ch-c)
channel to air 62,5 °C/W
channel to case 6,25 °C/W
N-channel MOS-FET
F-III Series
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
Typical Transfer Characteristics
→
→
→
Typical Drain-Source-On-State-Resistance vs. I
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
→
→
→
Typical Capacitance vs. V
Typical Input Charge
Forward Characteristics of Reverse Diode
→
→
→
Allowable Power Dissipation vs. T
Safe operation area
→
→
→
This specification is subject to change without notice!
60V 0,22Ω 8A 20W
> Characteristics
ch
↑ 1 ↑ 2 ↑ 3
[A]
D
I
VDS [V]
↑ 4 ↑ 5 ↑ 6
]
Ω
[
DS(ON)
R
ID [A]
DS
]
Ω
[
DS(ON)
R
Tch [°C]
D
[S]
fs
g
ID [A]
D
[A]
D
I
[V]
GS(th)
V
VGS [V]
Tch [°C]
ch
↑ 7 ↑ 8 ↑ ↑ 9
C [nF]
VDS [V]
[V]
DS
V
Qg [nC]
C
[V]
GS
V
[A]
F
I
VSD [V]
↑
[K/W]
th(ch-c)
Z
Transient Thermal impedance
↑ 10 ↑ 12 11
[W]
D
P
Tc [°C]
[A]
D
I
VDS [V]
t [s]
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