Fuji Electric 2MBI900VXA-120E-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI900VXA-120E-50

IGBT Modules

IGBT MODULE (V series)
1200V / 900A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation P

Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T

Isolation voltage

between terminal and copper base (*1)
between thermistor and others (*2)
Mounting - M5 6.0

Screw torque (*3)

Main Terminals - M8 10.0
Sense Terminals - M4 2.1

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be c onnected together, other terminals should be connected together and shorted to base plate dur ing the test.
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5)
Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Inverter

Turn-off time

Forward on voltage

Reverse recovery time t

Resistance R

Thermistor

B value B T = 25/50°C 3305 3375 3450 K

Note *4: Fuji dened VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm.

CES 1200 V
GES ±20 V

C Continuous

I

C pulse 1ms 1800

I

C 900

-I

C pulse 1ms 1800

-I

C 1 device 5100 W
j 175

Tjop 150

C 150
stg -40 ~ +150

C=25°C 1200

T

C=100°C 900

T

A

°C

Viso AC : 1min. 4000 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 8.0 mA
GES VCE = 0V, VGE = ±20V - - 1600 nA

GE (th) VCE = 20V, IC = 900mA 6.0 6.5 7.0 V

V

CE (sat)

(terminal)
(*4)

V

CE (sat)

GE = 15V

V

C = 900A

I

(chip)

G (int) - - 1.19 - Ω
ies VCE = 10V, VGE = 0V, f = 1MHz - 83 - nF

on

t
t

r - 400 -
r (i) - 150 -

t

off - 1200 -

t

f - 150 -

t
V

F

VCC = 600V

C = 900A

I

GE = ±15V

V

G = 1.6Ω

R

S = 70nH

L

(terminal)
(*4)

V

F

GE = 0V

V

F = 900A

I

(chip)

rr IF = 900A - 200 - nsec

j=25°C - 1.85 2.30

T

j=125°C - 2.15 -

T

j=150°C - 2.20 -

T
T

j=25°C - 1.75 2.20
j=125°C - 2.05 -

T

j=150°C - 2.10 -

T

j=25°C - 1.90 2.35

T

j=125°C - 2.05 -

T

j=150°C - 2.00 -

T
T

j=25°C - 1.80 2.25
j=125°C - 1.95 -

T

j=150°C - 1.90 -

T

Characteristics

min. typ. max.

- 1000 -

T = 25°C - 5000 ­T = 100°C 465 495 520

Units

V

nsec

V

Ω

1

7731c

APRIL 2014

2MBI900VXA-120E-50

3

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance(1device) R

Contact thermal resistance (1device) (*5) R

Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.

th(j- c)

th(c-f) with Thermal Compound -

Inverter IGBT - - 0.030
Inverter F WD - - 0.054

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Characteristics

min. typ. max.

0.00625

Units

°C/W

-

2

2MBI900VXA-120E-50

Characteristics (Representative)

[INVERTER] [INVERTER]

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

2000

1500

V

GE=20V

15V

12V

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

2000

1500

GE= 20V

V

15V

12V

Collector current: IC [A]

1000

500

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

[INVERTER] [INVERTER]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

2000

125°C

j=25°C

T

1500

1000

500

Collector Current: IC [A]

0

0 1 2 3 4

150°C

1000

10V

500

Collector current: IC [A]

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

j= 25°C / chip

T

10

8

6

4

C=1800A

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

I

C=900A

I
I

C=450A

Collector-Emitter Voltage: VCE [V]

[INVERTER] [INVERTER]

Gate Capacitance vs. Collector-Emitter Voltage (typ.)

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

1000

100

***

10

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 10 20 30

Collector-Emitter voltage: VCE [V]

Cies

Cres

Coes

Gate-Emitter Voltage: VGE [V]

Dynamic Gate Charge (typ.)

CC=600V, IC=900A, Tj= 25°C

V

20.00

15.00

10.00

5.00

0.00

-5.00

-10.00

Gate-Emitter voltage: VGE [V]

-15.00

-20.00

VCE

V

GE

800

600

400

200

0

-200

-400

-600

-800

CE [V]

Collector-Emitter voltage: V

-10000 -5000 0 5000 10000

Gate charge: Qg [μC]

3

2MBI900VXA-120E-50

5

[INVERTER] [INVERTER]

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=1.6Ω, Tj=25°C

V

10000

toff

1000

ton

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C

10000

Tj=125oC

o

Tj=150

toff

1000

tr

ton

C

tr

100

Switching time: ton, tr, toff, tf [nsec]

10

0 500 1000 1500 2000

Collector current: IC [A]

[INVERTER] [INVERTER]

CC=600V, IC=900A, VGE=±15V, Tj=125°C, 150°C

V

10000.0

toff

1000.0

Switching time: ton, tr, toff, tf [nsec]

100.0

10.0

0.1 1 10

ton

tr

tf

Tj=125oC

o

j=150

T

t

f

Switching time: ton, tr, toff, tf [nsec]

100

Switching time: ton, tr, toff, tf [nsec]

10

tf

0 500 1000 1500 2000

Collector current: IC [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

V

CC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C

600

Tj=125oC

500

400

300

200

100

C

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 500 1000 1500 2000

Tj=150

o

C

Eoff

Eon

Err

Gate resistance: RG [Ω]

[INVERTER] [INVERTER]

Switching loss vs. Gate resistance (typ.)

CC=600V, IC=900A, VGE=±15V, Tj=125°C, 150°C

V

500

450

400

350

300

250

200

150

100

50

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

Tj=125oC

o

j=150

T

C

Eoff

Gate resistance: RG [Ω]

Collector current: IC [A]

Reverse bias safe operating area (max.)

+V

GE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C

2000

1800

1600

Eon

Err

0110

4

1400

1200

1000

Collector current: IC [A]

Notice)

800

Switching characteristics of V
is defined between Sense C1

600

and Sense C2E1 for Upper arm

400

and Sense C2E1 and Sense

200

E2 for Lower arm .

CE

0

0 500 1000 1500

Collector-Emitter voltage: VCE [V]

2MBI900VXA-120E-50

[INVERTER] [INVERTER]

Forward Current vs. Forward Voltage (typ.)

chip

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Reverse Recovery Characteristics (typ.)

CC=600V, VGE=±15V, RG=1.6Ω, Tj=25°C

V

2000

j=25°C

1500

T

1000

125°C

500

Forward current: IF [A]

150°C

0

0 1 2 3

Forward on voltage: VF [V]

[INVERTER]

Reverse Recovery Characteristics (typ.)

VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C

10000

Tj=125oC

o

Tj=150

C

rr [nsec]

Reverse recovery current: Irr [A]

1000

100

Reverse recovery time: t

10

0 500 1000 1500 2000

rr

I

trr

10000

rr [nsec]

1000

Irr

t

rr

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 500 1000 1500 2000

Forward current: IF [A]

Transient Thermal Resistance (max.)

1

0.1

0.01

0.001

T

sec〕0.0023 0.0301 0.0598 0.0708

〔

Rth IGBT 0.00322 0.00816 0.01153 0.00710

Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A]

0.0001

〔°C/W〕 FWD 0.00579 0.01469 0.02075 0.01278

0.001 0.01 0.1 1

FWD

IGBT

Forward current: IF [A]

[THERMISTOR]

Temperature characteristic (typ.)

100

10

1

Resistance : R [kΩ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Temperature [°C]

Pulse Width : Pw [sec]

FWD safe operating area (max.)

j=150°C

T

2000

1500

Pmax=900kW

1000

Notice)
Switching characteristics of V
is defined between Sense C1

500

CE

and Sense C2E1 for Upper arm
and Sense C2E1 and Sense
E2 for Lower arm .

0

0 500 1000 1500

Collector-Emitter voltage: VCE [V]

5

2MBI900VXA-120E-50

7

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

LABEL1

Equivalent Circuit Schematic

Main C2E1(8)

[ Inverter ] [ Thermistor ]

Main C1(9)

Main E2(10)

Sense C1(5)

G1(4)

Sense C2E1(3)

G2(1)

Sense E2(2)

Weight:850g(typ.)

TH1(7)

TH2(6)

6

2MBI900VXA-120E-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristic s, data, materials, and structures as of April 2011.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or

implied, under any patent, copyright, trade secret or other intellectual proper ty right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become

faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from c ausing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability

requirements.

• Computers • OA equipment • Communic ations equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,

it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut- off feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment

(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express per mission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.

Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

7

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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www.fujielectric.co.jp/products/semiconductor/

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Information

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1

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2

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3

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4

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6

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7

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8

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9

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10

改廃のお知らせ

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1

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2

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3

Application Manuals

4

Technical Documents

5

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6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

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9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
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1

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2

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3

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4

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5

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6

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7

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8

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2015-10