Fuji Electric 2MBI900VXA-120E-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
2MBI900VXA-120E-50
IGBT Modules
IGBT MODULE (V series)
1200V / 900A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting - M5 6.0
Screw torque (*3)
Main Terminals - M8 10.0
Sense Terminals - M4 2.1
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be c onnected together, other terminals should be connected together and shorted to base plate dur ing the test.
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5)
Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance C
Turn-on time
Inverter
Turn-off time
Forward on voltage
Reverse recovery time t
Resistance R
Thermistor
B value B T = 25/50°C 3305 3375 3450 K
Note *4: Fuji dened VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm.
CES 1200 V
GES ±20 V
C Continuous
I
C pulse 1ms 1800
I
C 900
-I
C pulse 1ms 1800
-I
C 1 device 5100 W
j 175
Tjop 150
C 150
stg -40 ~ +150
C=25°C 1200
T
C=100°C 900
T
A
°C
Viso AC : 1min. 4000 VAC
N m
Symbols Conditions
CES VGE = 0V, VCE = 1200V - - 8.0 mA
GES VCE = 0V, VGE = ±20V - - 1600 nA
GE (th) VCE = 20V, IC = 900mA 6.0 6.5 7.0 V
V
CE (sat)
(terminal)
(*4)
V
CE (sat)
GE = 15V
V
C = 900A
I
(chip)
G (int) - - 1.19 - Ω
ies VCE = 10V, VGE = 0V, f = 1MHz - 83 - nF
on
t
t
r - 400 -
r (i) - 150 -
t
off - 1200 -
t
f - 150 -
t
V
F
VCC = 600V
C = 900A
I
GE = ±15V
V
G = 1.6Ω
R
S = 70nH
L
(terminal)
(*4)
V
F
GE = 0V
V
F = 900A
I
(chip)
rr IF = 900A - 200 - nsec
j=25°C - 1.85 2.30
T
j=125°C - 2.15 -
T
j=150°C - 2.20 -
T
T
j=25°C - 1.75 2.20
j=125°C - 2.05 -
T
j=150°C - 2.10 -
T
j=25°C - 1.90 2.35
T
j=125°C - 2.05 -
T
j=150°C - 2.00 -
T
T
j=25°C - 1.80 2.25
j=125°C - 1.95 -
T
j=150°C - 1.90 -
T
Characteristics
min. typ. max.
- 1000 -
T = 25°C - 5000 T = 100°C 465 495 520
Units
V
nsec
V
Ω
1
7731c
APRIL 2014
2MBI900VXA-120E-50
3
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance(1device) R
Contact thermal resistance (1device) (*5) R
Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.
th(j- c)
th(c-f) with Thermal Compound -
Inverter IGBT - - 0.030
Inverter F WD - - 0.054
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics
min. typ. max.
0.00625
Units
°C/W
-
2
2MBI900VXA-120E-50
Characteristics (Representative)
[INVERTER] [INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 25°C / chip
2000
1500
V
GE=20V
15V
12V
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 150°C / chip
2000
1500
GE= 20V
V
15V
12V
Collector current: IC [A]
1000
500
10V
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
[INVERTER] [INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
GE= 15V / chip
V
2000
125°C
j=25°C
T
1500
1000
500
Collector Current: IC [A]
0
0 1 2 3 4
150°C
1000
10V
500
Collector current: IC [A]
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
j= 25°C / chip
T
10
8
6
4
C=1800A
2
Collector-Emitter Voltage: VCE [V]
0
5 10 15 20 25
I
C=900A
I
I
C=450A
Collector-Emitter Voltage: VCE [V]
[INVERTER] [INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
GE= 0V, ƒ= 1MHz, Tj= 25°C
V
1000
100
***
10
Gate Capacitance: Cies, Coes, Cres [nF]
1
0 10 20 30
Collector-Emitter voltage: VCE [V]
Cies
Cres
Coes
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
CC=600V, IC=900A, Tj= 25°C
V
20.00
15.00
10.00
5.00
0.00
-5.00
-10.00
Gate-Emitter voltage: VGE [V]
-15.00
-20.00
VCE
V
GE
800
600
400
200
0
-200
-400
-600
-800
CE [V]
Collector-Emitter voltage: V
-10000 -5000 0 5000 10000
Gate charge: Qg [μC]
3
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