Fuji Electric 2MBI75VA-170-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI75VA-170-50

IGBT Modules

IGBT MODULE (V series)
1700V / 75A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together when isolation test will be done.
Note *2 : Recommendable Value : 3.0~ 5.0 N·m (M5 or M 6)
Note *3 : Recommendable Value : 2.5~ 5.0 N·m (M5)

between terminal and copper base (*1)
Mounting (*2) - 5.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance(1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1700 V
GES ±20 V

C Continuous

I

C pulse 1ms 150

I

C 75

-I

C pulse 1ms 150

-I

C 1 device 555 W
j 175

C=100°C 75

T

C=25°C 110

T

Tjop 150

C 125
stg -40 ~ 125

Viso AC : 1min. 4000 VAC

Symbols Conditions

CES VGE = 0V, VCE = 1700V - - 1.0 mA
GES VCE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 75mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V

GE = 15V

V

C = 75A

I

(chip)

G (int) - - 10 - Ω
ies VCE = 10V, VGE = 0V, f = 1MHz - 8.2 - nF

on

t
t

r - 550 -
r (i) - 70 -

t

off - 1300 -

t

f - 150 -

t

F

V
(terminal)

F

V

VCC = 900V, IC = 75A

GE = ±15V, Rg_on=Rg_off= 22Ω

V

j=150°C, LS = 30nH

T

GE = 0V

V

F = 75A

I

(chip)

rr IF = 75A - 140 - nsec

th(j- c)

th(c-f) with Thermal Compound - 0.050 -

IGBT - - 0.27
FWD - - 0.50

T
T
T
T
T
T

T
T
T
T
T
T

Package No. : M263

A

°C

N m

Characteristics

min. typ. max.

j=25°C - 2.10 2.55
j=125°C - 2.55 -
j=150°C - 2.60 -
j=25°C - 2.00 2.45
j=125°C - 2.40 -
j=150°C - 2.45 -

- 1250 -

j=25°C - 1.85 2.30
j=125°C - 2.10 -
j=150°C - 2.10 -
j=25°C - 1.80 2.25
j=125°C - 2.05 -
j=150°C - 2.05 -

Characteristics

min. typ. max.

Units

V

nsec

V

Units

°C/W

1

7932c

MARCH 2016

2MBI75VA-170-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

180

160

140

120

100

80

60

Collector current: Ic [A]

40

20

0

0 1 2 3 4 5

Collector-Emitter voltage: V

VGE=20V 15V 12V

10V

8V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

180

160

125°CTj=25°C

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

180

160

140

120

100

80

60

Collector current: Ic [A]

40

20

0

0 1 2 3 4 5

Collector-Emitter voltage: V

VGE= 20V

15V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

8

140

120

100

80

60

Collector Current: Ic [A]

40

20

0

0 1 2 3 4

Collector-Emitter Voltage: V

150°C

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cies

Cres

Coes

CE [V]

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=900V, Ic=75A, T

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-1.0 -0.5 0.0 0.5 1.0

VCE

VGE

Gate charge: Qg [μC]

j= 25°C

Ic=150A
Ic=75A
Ic=37.5A

1200

900

600

300

0

-300

-600

-900

-1200

Collector-Emitter voltage: VCE [V]

2

2MBI75VA-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=22Ω, Tj=125°C

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

Vcc=900V, Ic=75A, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

toff

ton

0 50 100 150 200

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff

1 10 100 1000

tr

tf

ton
tr

tf

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=22Ω, Tj=150°C

10000

toff

ton

0 50 100 150 200

Collector current: Ic [A]

tr

tf

Switching time: ton, tr, toff, tf [nsec]

1000

100

10

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=22Ω

90

80

70

60

50

40

30

20

10

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 50 100 150 200

Tj=125oC

o

T

j=150

C

Eon

Eoff

Err

Gate resistance: Rg_on, Rg_off [Ω]

Switching loss vs. Gate resistance (typ.)

Vcc=900V, Ic=75A, VGE=±15V, Tj=125, 150°C

120

Tj=125oC

o

C

j=150

100

80

60

40

20

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100 1000

T

Eon

Eoff

Err

Gate resistance: Rg_on, Rg_off [Ω]

Collector current: Ic [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, Rg_off=22Ω, Tj=150°C

200

150

100

50

Collector current: Ic [A]

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

3

CE [V]

2MBI75VA-170-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

160

T

140

120

100

80

60

40

Forward current: IF [A]

20

0

0 1 2 3

150°C

Forward on voltage: V

j=25°C

125°C

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

GE=±15V, Rg_on=22Ω, Tj=150°C

1000

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

1000

rr [nsec]

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

GE=±15V, Rg_on=22Ω, Tj=125°C

10

0 50 100 150 200

Forward current: I

Transient Thermal Resistance (max.)

1

FWD

trr
Irr

F [A]

rr [nsec]

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 50 100 150 200

Forward current: I

FWD safe operating area (max.)

Tj=150°C

200

150

100

Pmax=135kW

F [A]

trr

Irr

0.1

4

Zth

=

0.01

n

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.02896 0.07343 0.10373 0.06389

Thermal resistanse: Rth(j-c) [°C/W] ***

0.001

n

[°C/W] FWD 0.05149 0.13053 0.18441 0.11358

0.001 0.01 0.1 1

Pulse Width : Pw [sec]

Σ

n

=1

1 2 3 4

IGBT




•

r 1– e

n




t



-

–

τ



n




50

Reverse recovery current: Irr [A]

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

CE [V]

4

2MBI75VA-170-50

1. Outline Drawing ( Unit : mm

)

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

2. Equivalent Circuit

Weight: 180g (typ.)

C1

G1

E1

C2E1

G2

E2

E2

5

2MBI75VA-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to change without notice for specic ation changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or war ranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications descr ibed herein.

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faulty. When using Fuji Electric semiconduc tor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment whic h has normal reliability
requirements.

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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

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6