Fuji Electric 2MBI75U4A-120 Data Sheet

2MBI75UA-120

IGBT Module U-Series

Features

· High speed switching

· Voltage drive

· Low inductance module structure

Maximum ratings and characteristics

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

1200V / 75A 2 in one-package

Equivalent Circuit Schematic

C1

C2E1

G1 E1

G2 E2

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item Symbol

Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector current IC

ICp

-IC

-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
Screw Torque Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)

Conditions

Continuous

1ms

1 device

AC:1min.

Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C

Rating

1200

±20
100

75
200
150

75
150
400

+150

-40 to +125
2500

3.5

3.5

Unit

V
V
A

W
°C

VAC
N·m

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols Conditions Characteristics Unit

Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

Input capacitance
Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time
Lead resistance, terminal-chip*3

*3:Biggest internal terminal resistance among arm.

ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead

VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A

VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=9.1 Ω

VGE=0V
IF=75A

IF=75A

Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C

Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C

Min. Typ. Max.

– – 1.0
– – 200

4.5 6.5 8.5
– 1.9 2.25
– 2.15 –
– 1.75 2.10
– 2.00 –
–8 –
– 0.36 1.20
– 0.21 0.60
– 0.03 –
– 0.37 1.00
– 0.07 0.30
– 1.75 2.05
– 1.85 –
– 1.60 1.90
– 1.70 –
– – 0.35
– 1.39 –

mA
nA
V
V

nF
µs

V

µs
mΩ

Thermal resistance characteristics

Items Symbols Conditions Characteristics Unit

Min. Typ. Max.

Thermal resistance

Contact Thermal resistance
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

Rth(j-c)
Rth(j-c)
Rth(c-f)*4

IGBT
FWD
With thermal compound

– – 0.31
– – 0.48
– 0.05 –

°C/W
°C/W
°C/W

E2

2MBI75UA-120

Characteristics (Representative)

Collect or current vs. Collect or-Emitter volt age (typ .)

Tj= 25°C / chip

200

IGBT Module

Collect or current vs. Collect or-Emitter volt age (typ .)

Tj= 125°C / chip

200

150

100

Collector current : Ic [A]

50

0

012345

Collect or current vs. Collect or-Emitter volt age (typ .)

200

150

100

VGE =2 0 V

Collect o r-E mit t er voltage : VCE [V]

15V 12V

VGE=15V / chip Tj=25°C / chip

Tj=125°CTj=25°C

10V

8V

VGE=20V 15V 12V

150

100

Collector current : Ic [A]

50

0

012345

Collector-Emit t er voltage : VCE [V]

Collect or-Emit ter vo ltage vs. G at e-Emit t er voltage (ty p.)

10

8

6

4

10V

8V

Collector current : Ic [A]

50

0

012345

Collect o r-E mit t er voltage : VCE [V]

Cap acit ance v s. Collect or-Emitter voltage (t y p .) Dy namic Gat e charge (ty p.)

VGE=0V, f= 1MHz, Tj= 25°C

100.0

10.0

1.0

Capacitance : Cies, Coes, Cres [ nF ]

0.1

0102030

Cies

Cres

Coe s

2

Collector - Emitter voltage : VCE [ V ]

0

5 10152025

Gat e - E mi t t er vo lt age : VGE [ V ]

Ic=150A
Ic=75A
Ic= 37.5A

Vcc=600V, Ic=75A , Tj= 25°C

VGE

Gate - Emitter voltage : VGE [ 5V/div ]

Collector-Emitter voltage : VCE [ 200V/div ]

0

0 100 200 300 400

VCE

Collect o r-E mit t er voltage : VCE [V]

Gate charge : Qg [ nC ]