Fuji Electric 2MBI600VD-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI600VD-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 600A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless other wise specied)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 2940 W

Junction temperature Tj 175
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature Tstg -40 ~ +125
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0- 6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5- 5.0 Nm (M6)

between terminal and copper base (*1)
Mounting (*2)
Terminals (*3) 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance Cies V

Turn-on time

Inverter

Turn-off time

Forward on voltage

Reverse recovery time trr I

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 600 V
GES ±20 V

Ic Continuous Tc=80°C 600
Ic pulse 1ms Tc=80°C 1200

-Ic 600

-Ic pulse 1ms 1200

Tjop 150

C 125

°C

Viso AC : 1min. 2500 VAC

-

Symbols Conditions

CES VGE = 0V, VCE = 600V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 600mA 6.2 6.7 7.2 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

g(int) - - 1.5 - Ω

ton
tr - 0.40 ­tr (i) - 0.15 ­toff - 0.75 -

VCE = 0V, VGE = ±20V

Tj=25°C - 1.85 2.30
Tj=125°C - 2.15 -

GE = 15V

V

C = 600A

I

Tj=150°C - 2.35 ­Tj=25°C - 1.60 2.05
Tj=125°C - 1.90 ­Tj=150°C - 2.00 -

CE

= 10V, VGE = 0V, f = 1MHz - 38.9 - nF

V

CC = 300V, IC = 600A
GE = ±15V, RG = 2.2Ω

V
Tj = 150°C, Ls =30nH

min. typ. max.

6.0

Characteristics

N m

Units

- - 800 nA

- 0.75 -

tf - 0.07 -

F

V
(terminal)

F

V
(chip)

Tj=25°C
Tj=125°C

GE = 0V

V

F = 600A

I

Tj=150°C - 1.57 -

Tj=25°C
Tj=125°C

Tj=150°C - 1.47 -

F = 600A - 0.25 - µsec

- 1.70 2.25

- 1.60 -

- 1.60 1.85

- 1.50 -

Characteristics

min. typ. max.

Units

IGBT - - 0.051
FWD - - 0.088

°C/W

V

µsec

V

1

7728b

DECEMBER 2014

2MBI600VD-060-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

1400

VGE=20V 15V

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

Collector-Emitter voltage: V

12V

10V

8V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

1400

125°CTj=25°C 150°C

1200

1000

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

1400

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

VGE= 20V 15V

Collector-Emitter voltage: V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C / chip

10

8

800

600

400

Collector Current: Ic [A]

200

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

Cies

10

***

Coes

Cres

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 5 10 15 20 25 30

Collector-Emitter voltage: V

CE [V]

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=300V, Ic=600A, Tj= 25°C

20

15

10

GE [V]

5

0

-5

-10

-15

Gate-Emitter voltage: V

-20

-4 -3 -2 -1 0 1 2 3 4 5

VCE

VGE

Gate charge: Qg [µC]

Ic=1200A
Ic=600A
Ic=300A

400

300

200

100

0

-100

-200

-300

-400

Collector-Emitter voltage: VCE [V]

2

2MBI600VD-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000 1200 1400

Vcc=300V, Ic=600A, V

10000

1000

GE=±15V, RG=2.2Ω, Tj=125°C

toff ton

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff
ton

tr

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

tr

tf

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000 1200 1400

GE=±15V, RG=2.2Ω, Tj=150°C

toff ton

tr

tf

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=300V, V

80

60

GE=±15V, RG=2.2Ω, Tj=125°C, 150°C

Tj=125oC
Tj=150

o

C

Eoff

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: RG [Ω]

Switching loss vs. Gate resistance (typ.)

Vcc=300V, Ic=600A, V

180

160

140

120

100

80

60

40

20

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

GE=±15V, Tj=125°C, 150°C

Tj=125oC

o

Tj=150

C

Gate resistance: RG [Ω]

Eon

Eoff

Err

tf

40

Eon

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 200 400 600 800 1000 1200 1400

Collector current: Ic [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=2.2Ω, Tj=150°C

1400

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 200 400 600 800

Collector-Emitter voltage: VCE [V]

(Main terminals)

3