Fuji Electric 2MBI600VD-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI600VD-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 600A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless other wise specied)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 2940 W

Junction temperature Tj 175
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature Tstg -40 ~ +125
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0- 6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5- 5.0 Nm (M6)

between terminal and copper base (*1)
Mounting (*2)
Terminals (*3) 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance Cies V

Turn-on time

Inverter

Turn-off time

Forward on voltage

Reverse recovery time trr I

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 600 V
GES ±20 V

Ic Continuous Tc=80°C 600
Ic pulse 1ms Tc=80°C 1200

-Ic 600

-Ic pulse 1ms 1200

Tjop 150

C 125

°C

Viso AC : 1min. 2500 VAC

-

Symbols Conditions

CES VGE = 0V, VCE = 600V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 600mA 6.2 6.7 7.2 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

g(int) - - 1.5 - Ω

ton
tr - 0.40 ­tr (i) - 0.15 ­toff - 0.75 -

VCE = 0V, VGE = ±20V

Tj=25°C - 1.85 2.30
Tj=125°C - 2.15 -

GE = 15V

V

C = 600A

I

Tj=150°C - 2.35 ­Tj=25°C - 1.60 2.05
Tj=125°C - 1.90 ­Tj=150°C - 2.00 -

CE

= 10V, VGE = 0V, f = 1MHz - 38.9 - nF

V

CC = 300V, IC = 600A
GE = ±15V, RG = 2.2Ω

V
Tj = 150°C, Ls =30nH

min. typ. max.

6.0

Characteristics

N m

Units

- - 800 nA

- 0.75 -

tf - 0.07 -

F

V
(terminal)

F

V
(chip)

Tj=25°C
Tj=125°C

GE = 0V

V

F = 600A

I

Tj=150°C - 1.57 -

Tj=25°C
Tj=125°C

Tj=150°C - 1.47 -

F = 600A - 0.25 - µsec

- 1.70 2.25

- 1.60 -

- 1.60 1.85

- 1.50 -

Characteristics

min. typ. max.

Units

IGBT - - 0.051
FWD - - 0.088

°C/W

V

µsec

V

1

7728b

DECEMBER 2014

2MBI600VD-060-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

1400

VGE=20V 15V

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

Collector-Emitter voltage: V

12V

10V

8V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

1400

125°CTj=25°C 150°C

1200

1000

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

1400

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

VGE= 20V 15V

Collector-Emitter voltage: V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C / chip

10

8

800

600

400

Collector Current: Ic [A]

200

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

Cies

10

***

Coes

Cres

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 5 10 15 20 25 30

Collector-Emitter voltage: V

CE [V]

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=300V, Ic=600A, Tj= 25°C

20

15

10

GE [V]

5

0

-5

-10

-15

Gate-Emitter voltage: V

-20

-4 -3 -2 -1 0 1 2 3 4 5

VCE

VGE

Gate charge: Qg [µC]

Ic=1200A
Ic=600A
Ic=300A

400

300

200

100

0

-100

-200

-300

-400

Collector-Emitter voltage: VCE [V]

2

2MBI600VD-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000 1200 1400

Vcc=300V, Ic=600A, V

10000

1000

GE=±15V, RG=2.2Ω, Tj=125°C

toff ton

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff
ton

tr

Switching time vs. Collector current (typ.)

Vcc=300V, V

10000

1000

tr

tf

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000 1200 1400

GE=±15V, RG=2.2Ω, Tj=150°C

toff ton

tr

tf

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=300V, V

80

60

GE=±15V, RG=2.2Ω, Tj=125°C, 150°C

Tj=125oC
Tj=150

o

C

Eoff

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: RG [Ω]

Switching loss vs. Gate resistance (typ.)

Vcc=300V, Ic=600A, V

180

160

140

120

100

80

60

40

20

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

GE=±15V, Tj=125°C, 150°C

Tj=125oC

o

Tj=150

C

Gate resistance: RG [Ω]

Eon

Eoff

Err

tf

40

Eon

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 200 400 600 800 1000 1200 1400

Collector current: Ic [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=2.2Ω, Tj=150°C

1400

1200

1000

800

600

400

Collector current: Ic [A]

200

0

0 200 400 600 800

Collector-Emitter voltage: VCE [V]

(Main terminals)

3

2MBI600VD-060-50

5

τ

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

1400

1200

1000

800

600

400

Forward current: IF [A]

200

150°C

125°C

Tj=25°C

0

0 1 2 3

Forward on voltage: V

Reverse Recovery Characteristics (typ.)

Vcc=300V, V

1000

GE=±15V, RG=2.2Ω, Tj=150°C

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=300V, V

1000

100

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

10

GE=±15V, RG=2.2Ω, Tj=125°C

0 200 400 600 800 1000 1200 1400

Forward current: IF [A]

Transient Thermal Resistance (max.)

1

***

trr

Irr

trr

0.1

FWD

Irr

100

0.01

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

10

0 200 400 600 800 1000 1200 1400

Forward current: I

Thermal resistanse: Rth(j-c) [°C/W]

0.001

0.001 0.01 0.1 1

F [A]

[sec] 0.0009 0.0178 0.0541 0.0557

Rth IGBT 0.00467 0.01081 0.02349 0.01203

[°C/W] FWD 0.00808 0.01870 0.04063 0.02082

Pulse Width : Pw [sec]

IGBT

4

2MBI600VD-060-50

E2

E1

E2

E1

Outline Drawings (Unit: mm)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

G1

G1

G2

G2
E2

E2

C1

C1

C2E1

C2E1

Weight: 370g (typ.)

5

2MBI600VD-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of December 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property r ight owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual proper ty rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product qualit y and reliabilit y, a small perc entage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electr ical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communic ations equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut- off feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliabilit y such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear c ontrol equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. A ll rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electr ic Co., Ltd. nor its agents shall be liable for any injury c aused by any use of the products not in accordance with instructions
set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Information

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2

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3

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4

Technical Documents

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IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

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9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
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半导体综合目录

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4

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5

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6

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7

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2015 -10