FUJI ELECTRIC 2MBI400U2B-060-50 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT module

(RoHS compliant product)

2MBI400U2B-060-50

MS5F6562

Apr. 21 ’06

K.Muramatsu

M.Watanabe

K.Yamada

T.Miyasaka

MS5F6562

1

a

14

H04-004-07b

R e v i s e d R e c o r d s

Date

Apr.-21 -’06

Aug.-09 -’06 Revision

Classi-

fication

Enactment

Ind. Content

Revised Reliability test

a

results (P9/14)

Applied

date

Issued

date

Drawn Checked Checked Approved

K. Yamada T.MiyasakaM.W atanabe

K.Muramatsu

S. Ogawa

K. Yamada

T.Miyasaka

MS5F6562

2

a

14

H04-004-06b

1. Outline Drawing ( Unit : mm )

2MBI400U2B-060-50

(RoHS compliant product)

2. Equivalent circuit

MS5F6562

3

a

14

H04-004-03a

3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）

It ems Symbols Conditions

VCESCollector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage

Screw Torque

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)

Terminals 2.5~3.5 Nm (M5)

VGES

Ic

Icp

-Ic 400

-Ic pluse

Pc

Tj

Tstg

Viso

Mounting *2

Terminals *2

Continuous

1ms

AC : 1min.

Ma ximum

Ratings

650

±20 V

400

800

1250

150

-40～ +125

2500between terminal and copper base *1

3.5

Unit s

V

A

W1 device

℃

VAC

N・m

4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)

Items Symbols

Zero gate voltage Collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance -

Turn-off time

Forward on voltage

Reverse recovery time Lead resistance, terminal-chip *3 mΩR lead -

(*3)Biggest internal terminal resistance among arm.

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies VCE=10V,VGE=0V,f=1MHz

ton

trTurn-on time

tr (i)

toff

tf

VF

(terminal)

VF

(chip)

ｔｒｒ

VGE = 0V

VCE = 600V

VCE = 0V

VGE=±20V

VCE = 20V

Ic = 400mA

VGE=15V

Ic = 400A

Vcc = 300V

Ic = 400A

VGE=±15V

Rg = 6.8 Ω

VGE=0V

IF = 400A

Conditions

6.2

Tj= 25℃ Tj=125℃ Tj= 25℃ Tj=125℃

Char a cter istics

max.typ.min.

-

- 2.25 2.55

- 2.50

- 1.85 -

-

- 0.40

- 0.22

- 0.16

- 0.48

-

- 2.00

-

6.7

2.10 -

29.0 - nF

0.07

2.05 -

1.60 -

1.65

0.97 -

2.0 mA

400

7.7 V

-

1.20

0.60

- μs

1.20

0.45

2.35

-

Units

nA

V

μsIF = 400A - 0.35

MS5F6562

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H04-004-03a

5. Thermal resistance characteristics

Place of manufactur ing (code)

Items Symbols Conditions

Thermal resistance(1device) Rth(j-c)

Contact Thermal resistance (1device) *4

Rth(c-f) with Thermal Compound -

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT

FWD

Char a cter istics

min. t yp. ma x.

-

- - 0.16

- 0.10

0.025 -

6. Indication on module

Logo of pr oduction

2MBI400U2B-060-50

400A 600V

Lot.No.

7.Applicable category

This specification is applied to IGBT Module named 2MBI400U2B-060-50 .

Units

℃/W

8.Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% .

・

Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

・

Avoid exposure to corrosive gases and dust.

・

Avoid excessive external force on the module.

・

Store modules with unprocessed terminals.

・

Do not drop or otherwise shock the modules when transporting.

・

9. Definitions of switching time

90%

～

0V

V

L

RG

VGE

VCE

Ic

GE

V

CE

Vcc

Ic

0V 0A

t

rr

I

rr

Ic

～

90%

10%

10% 10%

t

r(i)

t

r

t

on

～

V

CE

～

t

off

0V

90%

t

f

10. Packing and Labeling Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

MS5F6562

5

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14

H04-004-03a