Fuji Electric 2MBI400U2B-060-50 Data Sheet

1. Outline Drawing ( Unit : mm )

2MBI400U2B-060-50

(RoHS compliant product)

2. Equivalent circuit

MS5F6562

3

a

14

H04-004-03a

3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）

It ems Symbols Cond it ions

VCESCollector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation
voltage

Screw Torque

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)

Terminals 2.5~3.5 Nm (M5)

VGES

Ic

Icp

-Ic 400

-Ic pluse

Pc

Tj

Tstg

Viso

Mounting *2

Terminals *2

Continuous

1ms

AC : 1min.

Ma ximum

Ratings

650

±20 V

400

800

800

1250

150

-40～ +125

2500between terminal and copper base *1

3.5

3.5

Unit s

V

A

W1 device

℃

VAC

N・m

4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)

Items Symbols

Zero gate voltage
Collector current

Gate-Emitter
leakage current

Gate-Emitter
threshold voltage

Collector-Emitter
saturation voltage

Input capacitance -

Turn-off time

Forward on voltage

Reverse recovery time
Lead resistance, terminal-chip *3 mΩR lead -

(*3)Biggest internal terminal resistance among arm.

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies VCE=10V,VGE=0V,f=1MHz

ton

trTurn-on time

tr (i)

toff

tf

VF

(terminal)

VF

(chip)

ｔｒｒ

VGE = 0V

VCE = 600V

VCE = 0V

VGE=±20V

VCE = 20V

Ic = 400mA

VGE=15V

Ic = 400A

Vcc = 300V

Ic = 400A

VGE=±15V

Rg = 6.8 Ω

VGE=0V

IF = 400A

Conditions

6.2

Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃

Tj= 25℃
Tj=125℃
Tj= 25℃ ­Tj=125℃

Char a cter istics

max.typ.min.

-

-

- 2.25 2.55

- 2.50

- 1.85 -

-

- 0.40

- 0.22

- 0.16

- 0.48

-

- 2.00

-

-

-

-

-

6.7

2.10 -

29.0 - nF

0.07

2.05 -

1.60 -

1.65

0.97 -

2.0 mA

400

7.7 V

-

1.20

0.60

- μs

1.20

0.45

2.35

-

Units

nA

V

V

μsIF = 400A - 0.35

MS5F6562

4

a

14

H04-004-03a

5. Thermal resistance characteristics

Place of manufactur ing (code)

Items Symbols Conditions

Thermal resistance(1device) Rth(j-c)

Contact Thermal resistance
(1device) *4

Rth(c-f) with Thermal Compound -

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT

FWD

Char a cter istics

min. t yp. ma x.

-

- - 0.16

- 0.10

0.025 -

6. Indication on module

Logo of pr oduction

2MBI400U2B-060-50

400A 600V

Lot.No.

7.Applicable category

This specification is applied to IGBT Module named 2MBI400U2B-060-50 .

Units

℃/W

8.Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% .

・

Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

・

Avoid exposure to corrosive gases and dust.

・

Avoid excessive external force on the module.

・

Store modules with unprocessed terminals.

・

Do not drop or otherwise shock the modules when transporting.

・

9. Definitions of switching time

90%

～

～

0V

V

L

RG

VGE

VCE

Ic

GE

V

CE

Vcc

Ic

0V
0A

t

rr

I

rr

Ic

～

90%

10%

10% 10%

t

r(i)

t

r

t

on

～

V

CE

～

～

t

off

0V

90%

t

f

10. Packing and Labeling
Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

MS5F6562

5

a

14

H04-004-03a

11. Li s t of material (材料リスト)

Solder

14

Sn/Ag base

(Not drawn in above)

No. Parts Material (main) Ref.

1 Base Plate Cu Ni plating

2 Main terminal Cu Ni plating

3 Sub terminal Cu or Brass Ni plating

4 Cover PPS resin UL 94V-0

(Total weight of soldering material(typ) : 6.4 g)

5 Case PPS resin UL 94V-0

6 Isolation substrate

7 IGBT chip Silicon (Not drawn in above)

8 FWD chip Silicon (Not drawn in above)

9 Wiring Aluminum

10 Silicone Gel Silicone resin

11 Adhesive Silicone resin

12 Solder (Under chip) Sn/Ag base (Not drawn in above)

Solder

13 Sn/Ag base (Not drawn in above)

(Under Isolation substrate )

(Between terminal

and Isolation substrate)

15 Label Paper (Not drawn in above)

16 Nut Fe Trivalent Chromate treatment

17 Ring Brass

Al2O3 + Cu

12. Ro HS Directi v e Compl i anc e(RoHS 指令適用について）

本IGBTモジュールは富士電機デバイステクノロジーが発行しているRoHSに関する資料MS5F6209を適用する。
　日本語版(MS5F6212)は参考資料とする。

The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT
Module. The Japanese Edition(MS5F6212) is made into a reference grade.

MS5F6562

6

14

H04-004-03a

a