Dipping time: 5 min. par each temp.
Transfer time: 10 sec.
Number of cycles: 10 cycles
High temp. 100 -5
Low temp. 0 -0 ℃
a
+0B - 1415( 1 : 0 )
+5
℃
MS5F 5293
a
14
b
c
7
H04-004-03
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
Reliab ility Tes t Items
Test
categories
Endurance Tests
Reference
Test itemsTest methods and conditions
1 High temperature
Reverse BiasTest temp.:
Bias Voltage: VC = 0.8×VCES
Bias Method: Applied DC voltage to C-E
Test duration: 1000hr.
2 High temperature
BiasTest temp.:
Bias Voltage: VC = VGE = +20V or -20V
Bias Method: Applied DC voltage to G-E
Test duration: 1000hr.
3 TemperatureB - 1215( 1 : 0 )
Humidity BiasTest temp.:
Relative humidity :
Bias Voltage: VC = 0.8×VCES
Bias Method: Applied DC voltage to C-E
Test duration: 1000hr.
4 IntermittedON time: 2 sec.D - 3225( 1 : 0 )
Operating LifeOFF time: 18 sec.
(Power cycle)Test temp.:
( for IGBT )
Number of cycles : 15000 cycles
Ta = 125 -5 ℃
(Tj ≦ 150 ℃)
VGE = 0V
Ta = 125 -5
(Tj ≦ 150 ℃)
VCE = 0V
85 +-3oC
85 +-5%
VGE = 0V
Tj=100±5 deg
Tj ≦ 150 ℃, Ta=25±5 ℃
+0
+0
℃
norms
EIAJ
ED-4701
D - 3135( 1 : 0 )
D - 3235( 1 : 0 )
Number
of sample
Acceptance
number
Failure Criteria
ItemCharacteristicSymbolFailure criteriaUnitNote
Lower limit Upper limit
ElectricalLeakage currentICES-USL×2mA
characteristic±IGES-USL×2
Gate threshold voltageVGE(th)LSL×0.8USL×1.2mA
Saturation voltageVCE(sat)-USL×1.2V
Forward voltage VF-USL×1.2V
ThermalIGBT
VGE-USL×1.2mV
resistanceor VCE
FWD
VF-USL×1.2mV
Isolation voltageVisoBroken insulation-
VisualVisual inspection
inspection Peeling-The visual sample-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
A
completely before the measurement.
MS5F 5293
a
14
b
c
8
H04-004-03
Reliability Test Results
Test
cate-
gories
Reference
Test items
1 Terminal StrengthA - 11150
(Pull test)Method 1
2 Mounting StrengthA - 11250
3 VibrationA - 12150
norms
EIAJ ED-4701
Method 2
Number
of test
sample
Number
of failure
sample
Mechanical Tests
4 ShockA - 12250
1 High Temperature StorageB - 11150
2 Low Temperature StorageB - 112 50
3 Temperature HumidityB - 121 50
Storage
4 UnsaturatedB - 12350
Pressure Cooker
Environment Tests
5 Temperature CycleB - 13150
6 Thermal ShockB - 14150
1 High temperature Reverse BiasD - 31350
2 High temperature BiasD - 32350
( for gate )
3 Temperature Humidity BiasB - 12150
Endurance Tests
4 Intermitted Operating LifeD - 32250
(Power cycling)
( for IGBT )
MS5F 5293
14
a
b9
c
H04-004-03
Collector current vs. Collector-Emitter voltage
[ Inverter ]
1000
Tj= 25C (typ.)
Collector current vs. Collector-Emitter voltage
[ Inverter ]
1000
Tj= 125C (typ.)
15V
800
600
400
VGE= 20V
12V
Collector current : Ic [ A ]
200
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
1000
800
600
VGE=15V (typ.)
Tj= 25C
10V
8V
Tj= 125C
800
600
400
VGE= 20V
Collector current : Ic [ A ]
200
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
12
10
8
Tj= 25C (typ.)
15V
12V
10V
8V
400
Collector current : Ic [ A ]
200
0
01234
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capaci tance : Cies, Coes, Cres [ pF ]
50000
10000
5000
1000
Cies
Coes
Cres
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
510152025
Ic=800A
Ic=400A
Ic=200A
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
500
400
300
200
100
Collector - Emitter voltage : VCE [ V ]
Vcc=300V, Ic=400A, Tj= 25C
25
20
15
10
5
Gate - Emitter voltage : VGE [ V ]
500
05101520253035
Collector - Emitter voltage : VCE [ V ]
0
02004006008001000 1200 1400 1600
Gate charge : Qg [ nC ]
10
MS5F 5293
H04-004-03
0
14
a
b
c
bb
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=6.8ohm, Tj= 25C
1000
[ Inverter ]
toff
ton
Switching time vs. Collector current (typ.)
[ Inverter ]
Vcc=300V, VGE=+-15V, Rg= 6.8ohm, Tj= 125C
1000
ton
toff
100
Switching time : ton, tr, toff, tf [ nsec ]
10
02004006008001000
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
5000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Vcc=300V, Ic=400A, VGE=+-15V, Tj= 25C
ton
toff
tr
100
10
11050
Gate resistance : Rg [ ohm ]
tf
tr
tf
100
tr
tf
Switching time : ton, tr, toff, tf [ nsec ]
10
02004006008001000
Collector current : Ic [ A ]
b
Switching loss vs. Collector current (typ.)
[ Inverter ]
Vcc=300V, VGE=+-15V, Rg=6.8ohm
30
20
10
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
02004006008001000
Collector current : Ic [ A ]
Eoff(125C)
Eoff(25C)
Eon(125C)
Eon(25C)
Err(125C)
Err(25C)
Switching loss vs. Gate resistance (typ.)
[ Inverter ]
Vcc=300V, Ic=400A, VGE=+-15V, Tj= 125C
70
60
50
40
30
20
10
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
510100
Gate resistance : Rg [ ohm ]
Eon
Eoff
Err
Reverse bias safe operating area
[ Inverter ]
+VGE=15V, -VGE<=15V, Rg>=6.8ohm, Tj<=125C
1000
900
800
700
600
500
400
300
Collector current : Ic [ A ]
200
100
0
0200400600800
Collector - Emitter voltage : VCE [ V ]
MS5F 5293
11
14
a
b
c
H04-004-03
bb
Forward current vs. Forward on voltage (typ.)
900
800
700
600
500
400
300
Forward current : IF [ A ]
200
100
[ Inverter ]
Tj=125C
Tj=25C
Reverse recovery characteristics (typ.)
[ Inverter ]
300
100
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Vcc=300V, VGE=+-15V, Rg=6.8ohm
trr(125C)
Irr(125C)
trr(25C)
Irr(25C)
0
0123
Forward on voltage : VF [ V ]
c
1
0.1
0.01
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
1E-3
0.0010.010.11
Pulse width : Pw [ sec ]
FWD
IGBT
30
02004006008001000
Forward current : IF [ A ]
MS5F 5293
12
14
b
c
H04-004-03
a
Warni ngs
100um
10um
- This product shall be used within its abusolute maximun rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
Use this product with keeping the cooling fin's flatness between screw holes within 100um and the
rouphness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a cirtical accident.
- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However,
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or
death, damage to property like by fire, and other social damage resulted from a failure or malfunc tion of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
- The application examples described in this specification only explain typical ones that used the Fuji Electric
products. This s pecification never ensure to enforce the industrial property and other rights, nor license the
- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this s pecification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine ralaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.