Fuji Electric 2MBI400TB-060 SPECIFICATION
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
2MBI400TB-060
MS5F 5293
Oct. 22 '02
Y.Kobayashi
T.Miyasaka
K.Yamada
Fuji Electric Co.,Ltd.
Matsumoto Factory
a
T.FujihiraOct. 23 '02
MS5F 5293
1
14
b
c
H04-004-07
R e v i s e d R e c o r d s
Class i-
Date
Oct.-23-'02 T.Fujihira
Nov.-29-'02
Jan.-31-'03
Apr.-07-'04
fication Ind. Content
enactment
Revised Reliab ility
Revision
Revision
Revision
a
test condition (P7/14)
Revised characteristics
b
curve up to 800A
(P11/14, 12/14)
Revised ton,tr,toff,tf
(P4/14)
c
Revised Rth curve
(P12/14)
Applied
date Drawn Checked Approved
Issued
date
Y.Kobayashi
Y.Kobayashi
T.Miyasaka
K.Yamada
T.Miyasaka
K.Yamada
T.Miyasaka
K.Yamada
T.Miyasaka
K.Yamada
T.Fujihira
T.Fujihira
Y.SekiY.Kobayashi
MS5F 5293
a
2
14
b
c
H04-004-06
1. Outline Drawing ( Unit : mm )
2MBI400TB-060
2. Equivalent circuit
MS5F 5293
14
a
b
c
3
H04-004-03
3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified
Zero gate voltage
Collector current
Items Symbols Conditions
）
Maximum
Ratings
Collector-Emitter voltage VCES Ic=1mA 600 V
Gate-Emitter voltage VGES ±20 V
Ic Duty=100 %
Collector current Ic pulse 1ms
IF
Duty=56 %
400
800
400
IF pulse 1ms 800
Collector Power Dissipation Pc 1270 W
1 device
Junction temperature Tj 150
Storage temperature Tstg -40~ +125
Isolation voltage
Screw Torque
(*1)
Viso AC : 1min. 2500 V
Mounting
Terminals
(*2)
(*2)
3.5
3.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminal 2.5~3.5Nm (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
Items Symbols Conditions
min. typ. Max.
Units
A
℃
℃
Nm
Units
Gate-Emitter leakage current I
Gate-Emitter
threshold voltage
Collector-Emitter
VCE(sat)
I
CESVGE
GESVCE
V
GE(th)VCE
= 0 V, V
= 0 V, V
= 600 V - - 2.0 mA
CE
= ±20 V - - 400
GE
= 20 V, Ic = 400 mA 6.2 6.7 7.7 V
V
= 15 V Chip - 1.9 -
GE
saturation voltage Ic = 400 A Terminal - 2.2 2.5
Input capacitance Cies
Output capacitance Coes V
VGE =
CE
0 V - 30000 -
= 10 V - 5200 - pF
Reverse transfer capacitance Cres f = 1 MHz - 4500 -
ton Vcc = 300 V -
Turn-on time tr Ic = 400 A -
tr
V
= ±15 V - 0.1 -
GE
(i)
Turn-off time
toff RG = 6.8
tf -
Forward on voltage V
FIF
= 400 A
Chip - 1.75 -
c
c
0.2
c
-
0.55
c
0.05
0.4
1.2
0.6
1.2
0.45
Terminal - 1.9 2.5
Reverse recovery time trr IF = 400 A - - 0.3
Allowabe avalanche energy
during short circuit cutting off P
AV
Ic > 800A, Tj = 125
℃
200 - - mJ
(Non-repetitive)
μ
μ
A
n
V
s
V
s
5. Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance
R
th(j-c)
IGBT - - 0.098
(1 device) FWD - - 0.19℃/
Contact Thermal resistance R
th(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
※
MS5F 5293
Characteristics
min. typ. Max.
0.025
-
-
H04-004-03
Units
Ｗ
a
4
14
b
c
6. Indication on module
2MBI400TB-060
400A 600V
Lot No.
7. Applicable category
This specification is applied to IGBT Module named 2MBI400TB-060
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35Ｃ and
・
humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid
・
condensation on the module surface.
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Place of manufucturing
Do not drop or otherwise shock the modules when tranporting.
・
9. Definitions of switching time
R
G
V
GE
V
CE
～
～
～
90%
0V
Ic
90%
V
CE
t
f
t
off
～
0V
V
L
Vcc
Ic
GE
V
CE
Ic
0V
0A
10%
90%
t
rr
I
rr
～
10% 10%
～
t
r(i)
t
r
t
on
MS5F 5293
a
14
b
c
5
H04-004-03
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