Fuji Electric 2MBI300VE-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI300VE-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 300A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 2200 W

Junction temperature Tj 175
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature Tstg -40 ~ +125
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 -5.0 Nm (M6)

between terminal and copper base (*1)
Mounting (*2)
Terminals (*3) 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance Cies V

Turn-on time

Inverter

Turn-off time

Forward on voltage

Reverse recovery time trr I

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1200 V
GES ±20 V

Ic Continuous

Tc=100°C 300
Tc=25°C 360

Ic pulse 1ms 600

-Ic 300

-Ic pulse 1ms 600

Tjop 150

C 125

°C

Viso AC : 1min. 2500 VAC

-

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

g(int) - - 2.5 - Ω

ton
tr - 0.20 ­tr (i) - 0.05 ­toff - 0.80 ­tf - 0.08 -

F

V
(terminal)

F

V
(chip)

VCE = 0V, VGE = ±20V

Tj=25°C - 2.05 2.60
Tj=125°C - 2.40 -

GE = 15V

V

C = 300A

I

Tj=150°C - 2.45 ­Tj=25°C - 1.85 2.15
Tj=125°C - 2.20 ­Tj=150°C - 2.25 -

CE

= 10V, VGE = 0V, f = 1MHz - 24.1 - nF

V

CC = 600V LS = 30nH

C = 300A

I

GE = ±15V

V

G = 1.8Ω

R
Tj = 150°C

Tj=25°C
Tj=125°C

GE = 0V

V

F = 300A

I

Tj=150°C - 1.95 -

Tj=25°C
Tj=125°C

Tj=150°C - 1.80 -

F = 300A - 0.15 - µsec

min. typ. max.

min. typ. max.

6.0

Characteristics

N m

Units

- - 800 nA

- 0.60 -

- 1.85 2.40

- 2.00 -

- 1.70 2.15

- 1.85 -

Characteristics

Units

IGBT - - 0.068
FWD - - 0.110

°C/W

V

µsec

V

1

7770c

MARCH 2014

2MBI300VE-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

700

600

500

400

300

200

Collector current: Ic [A]

100

0

0 1 2 3 4 5

VGE=20V 15V

Collector-Emitter voltage: VCE [V]

12V

10V

8V

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

700

600

500

125°C Tj=25°C 150°C

400

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

700

600

500

400

300

200

Collector current: Ic [A]

100

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

VGE= 20V 15V

12V

10V

8V

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C / chip

10

8

6

300

200

Collector Current: Ic [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: VCE [V]

Gate Capacitance vs. Collector-Emitter Voltage

VGE= 0V, ƒ= 1MHz, Tj= 25°C

100

10

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1

0 5 10 15 20 25 30

Collector-Emitter voltage: V

Cies

Cres

Coes

CE [V]

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=600V, Ic=300A, Tj= 25°C

20

15

10

GE [V]

5

0

-5

-10

Gate-Emitter voltage: V

-15

-20

-3000 -2000 -1000 0 1000 2000 3000

VCE

VGE

Gate charge: Qg [nC]

Ic=600A
Ic=300A
Ic=150A

800

600

400

200

0

-200

-400

-600

-800

Collector-Emitter voltage: VCE [V]

2

2MBI300VE-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

Vcc=600V, Ic=300A, V

10000

1000

GE=±15V, RG=1.8Ω, Tj=125°C

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff
ton
tr

toff
ton

tr

tf

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

GE=±15V, RG=1.8Ω, Tj=150°C

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=600V, V

60

40

GE=±15V, RG=1.8Ω, Tj=125°C, 150°C

Tj=125oC

o

C

Tj=150

toff
ton

tr

tf

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=300A, V

150

100

50

GE=±15V, Tj=125°C, 150°C

o

Tj=125

C

o

C

Tj=150

tf

G [Ω]

Eon

Eoff

Err

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 200 400 600 800

Collector current: Ic [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=1.8Ω, Tj=150°C

800

600

400

200

Collector current: Ic [A]

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: R

G [Ω]

0

0 200 400 600 800 1000 1200 1400

Collector-Emitter voltage: V

CE [V]

(Main terminals)

3

Err

2MBI300VE-120-50

5

n

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

800

600

Tj=25°C

400

125°C

200

Forward current: IF [A]

150°C

0

0 1 2 3

Forward on voltage: V

Reverse Recovery Characteristics (typ.)

Vcc=600V, V

1000

100

GE=±15V, RG=1.8Ω, Tj=150°C

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=600V, V

1000

100

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

10

GE=±15V, RG=1.8Ω, Tj=125°C

Irr

trr

0 200 400 600 800

Forward current: IF [A]

Transient Thermal Resistance (max.)

1

4

∑

n

1

=

Irr

trr

0.1

n

t

−









τ

n



1

eZth r

−⋅=



FWD

IGBT

0.01

n 1 2 3 4

[sec] 0.0009 0.0178 0.0541 0.0557

τ

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

10

Thermal resistanse: Rth(j-c) [°C/W]

0.001

0 200 400 600 800

Forward current: I

F [A]

n

IGBT 0.00623 0.01441 0.03132 0.01604

r

[°C/W] FWD 0.01007 0.02331 0.05066 0.02595

0.001 0.01 0.1 1

Pulse Width : Pw [sec]

FWD safe operating area (max.)

Tj=150°C

700

600

500

400

300

200

100

Reverse recovery current: Irr [A]

0

0 400 800 1200 1600

Collector-Emitter voltage: VCE [V]

(Main terminals)

Pmax=450kW

4

2MBI300VE-120-50

C2E1

E2

G2

G1

C2E1

E2

G2

G1

Outline Drawings (Unit: mm)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

Weight: 470g (typ.)

E1

E1

C1

C1

E2

E2

5

2MBI300VE-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristic s, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or

implied, under any patent, copyright, trade secret or other intellectual proper ty right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other 's intellectual proper ty rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become

faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become fault y. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability

requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,

it is imperative to contact Fuji Electric Co., Ltd. to obtain pr ior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incor porated in the equipment
becomes faulty.

• Transportation equipment (mounted on car s and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto -shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment

(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduc ed in any form or by any means without the express per mission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.

Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

日本
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Europe
North America

www.fujielectric.co.jp/products/semiconductor/

www.fujielectric.com/products/semiconductor/

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Information

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1

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2

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3

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4

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5

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6

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7

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8

富士電機技報

9

製品のお問い合わせ

10

改廃のお知らせ

Global

1

Semiconductors General Catalog

2

Product Information

3

Application Manuals

4

Technical Documents

5

Mounting Instructions

6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
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中国

1

半导体综合目录

2

产品信息

3

应用手册

4

技术资料

5

安装说明书

6

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7

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8

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2015-10