Fuji Electric 2MBI300VE-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI300VE-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 300A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units

Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation Pc 1 device 2200 W

Junction temperature Tj 175
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature Tstg -40 ~ +125
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 -5.0 Nm (M6)

between terminal and copper base (*1)
Mounting (*2)
Terminals (*3) 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance Cies V

Turn-on time

Inverter

Turn-off time

Forward on voltage

Reverse recovery time trr I

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1200 V
GES ±20 V

Ic Continuous

Tc=100°C 300
Tc=25°C 360

Ic pulse 1ms 600

-Ic 300

-Ic pulse 1ms 600

Tjop 150

C 125

°C

Viso AC : 1min. 2500 VAC

-

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

g(int) - - 2.5 - Ω

ton
tr - 0.20 ­tr (i) - 0.05 ­toff - 0.80 ­tf - 0.08 -

F

V
(terminal)

F

V
(chip)

VCE = 0V, VGE = ±20V

Tj=25°C - 2.05 2.60
Tj=125°C - 2.40 -

GE = 15V

V

C = 300A

I

Tj=150°C - 2.45 ­Tj=25°C - 1.85 2.15
Tj=125°C - 2.20 ­Tj=150°C - 2.25 -

CE

= 10V, VGE = 0V, f = 1MHz - 24.1 - nF

V

CC = 600V LS = 30nH

C = 300A

I

GE = ±15V

V

G = 1.8Ω

R
Tj = 150°C

Tj=25°C
Tj=125°C

GE = 0V

V

F = 300A

I

Tj=150°C - 1.95 -

Tj=25°C
Tj=125°C

Tj=150°C - 1.80 -

F = 300A - 0.15 - µsec

min. typ. max.

min. typ. max.

6.0

Characteristics

N m

Units

- - 800 nA

- 0.60 -

- 1.85 2.40

- 2.00 -

- 1.70 2.15

- 1.85 -

Characteristics

Units

IGBT - - 0.068
FWD - - 0.110

°C/W

V

µsec

V

1

7770c

MARCH 2014

2MBI300VE-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

700

600

500

400

300

200

Collector current: Ic [A]

100

0

0 1 2 3 4 5

VGE=20V 15V

Collector-Emitter voltage: VCE [V]

12V

10V

8V

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

700

600

500

125°C Tj=25°C 150°C

400

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

700

600

500

400

300

200

Collector current: Ic [A]

100

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

VGE= 20V 15V

12V

10V

8V

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C / chip

10

8

6

300

200

Collector Current: Ic [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: VCE [V]

Gate Capacitance vs. Collector-Emitter Voltage

VGE= 0V, ƒ= 1MHz, Tj= 25°C

100

10

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1

0 5 10 15 20 25 30

Collector-Emitter voltage: V

Cies

Cres

Coes

CE [V]

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=600V, Ic=300A, Tj= 25°C

20

15

10

GE [V]

5

0

-5

-10

Gate-Emitter voltage: V

-15

-20

-3000 -2000 -1000 0 1000 2000 3000

VCE

VGE

Gate charge: Qg [nC]

Ic=600A
Ic=300A
Ic=150A

800

600

400

200

0

-200

-400

-600

-800

Collector-Emitter voltage: VCE [V]

2

2MBI300VE-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

Vcc=600V, Ic=300A, V

10000

1000

GE=±15V, RG=1.8Ω, Tj=125°C

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff
ton
tr

toff
ton

tr

tf

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

GE=±15V, RG=1.8Ω, Tj=150°C

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=600V, V

60

40

GE=±15V, RG=1.8Ω, Tj=125°C, 150°C

Tj=125oC

o

C

Tj=150

toff
ton

tr

tf

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=300A, V

150

100

50

GE=±15V, Tj=125°C, 150°C

o

Tj=125

C

o

C

Tj=150

tf

G [Ω]

Eon

Eoff

Err

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 200 400 600 800

Collector current: Ic [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=1.8Ω, Tj=150°C

800

600

400

200

Collector current: Ic [A]

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: R

G [Ω]

0

0 200 400 600 800 1000 1200 1400

Collector-Emitter voltage: V

CE [V]

(Main terminals)

3

Err