Fuji Electric 2MBI300VB-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI300VB-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 300A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 2.5- 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5- 3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 3.5
Terminals (*3) - 3.5

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 600 V
GES ±20 V

C Continuous TC=80°C 300

I

C pulse 1ms 600

I

C 300

-I

C pulse 1ms 600

-I

C 1 device 1360 W
j 175

Tjop 150

C 125
stg -40 ~ 125

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 600V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 300mA 6.2 6.7 7.2 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 3.0 - Ω
ies VCE

on

t

r - 300 -

t

r (i) - 100 -

t

off - 600 -

t

f - 70 -

t

F

V
(terminal)

F

V
(chip)

rr IF = 300A - 200 - nsec

VCE = 0V, VGE = ±20V

T

V

GE = 15V

C = 300A

I

V

GE = 15V

C = 300A

I

= 10V, VGE = 0V, f = 1MHz - 20 - nF

VCC = 300V LS = 30nH

C = 300A

I

GE = ±15V

V

G = 4.7Ω

R

j = 150°C

T

V

GE = 0V

F = 300A

I

V

GE = 0V

F = 300A

I

j=25°C - 1.80 2.25
j=125°C - 2.10 -

T

j=150°C 2.30

T
T

j=25°C - 1.60 2.05
j=125°C - 1.90 -

T

j=150°C 2.00

T

Tj=25°C
Tj=125°C

j=150°C 1.57

T

Tj=25°C
Tj=125°C

j=150°C 1.47

T

Characteristics

min. typ. max.

- - 400 nA

- 650 -

- 1.70 2.15

- 1.60 -

- 1.60 2.05

- 1.50 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.025 -

IGBT - - 0.110
FWD - - 0.180

Units

Units

°C/W

V

nsec

V

1

7723a

JULY 2015

2MBI300VB-060-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

700

VGE=20V 15V

600

12V

500

400

10V

300

200

Collector current: IC [A]

100

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

V

GE= 15V / chip

700

600

500

125°CTj=25°C

150°C

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

700

600

VGE= 20V

500

15V

12V

400

10V

300

200

Collector current: IC [A]

100

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

8

400

300

200

Collector Current: IC [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

VGE= 0V, ƒ= 1MHz, Tj= 25°C

100

Cies

10

***

6

4

2

Collector-Emitter Voltage: VCE [V]

IC=600A
I

C=300A
C=150A

I

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

CC=300V, IC=300A, Tj= 25°C

V

20

15

10

VCE

5

0

-5

VGE

400

300

200

100

0

-100

Coes

Cres

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 10 20 30

Collector-Emitter voltage: V

CE [V]

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-200

-300

-400

Collector-Emitter voltage: VCE [V]

-2 -1 0 1 2 3

Gate charge: Q

2

g [ μC]

2MBI300VB-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=125°C

V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

V

CC=300V, IC=300A, VGE=±15V, Tj=125°C

10000

1000

toff

Collector current: I

C [A]

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=150°C

V

10000

ton

tr

1000

toff ton

tr

100

tf

Switching time: ton, tr, toff, tf [nsec]

10

tf

0 200 400 600 800

Collector current: I

C [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=125, 150°C

V

30

ton

toff

tr

20

Tj=125°C
T

j=150°C

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

G [Ω]

Switching loss vs. Gate resistance (typ.)

V

CC=300V, IC=300A, VGE=±15V, Tj=125, 150°C

120

Tj=125°C
T

100

80

60

40

20

j=150°C

tf

10

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 200 400 600 800

Collector current: I

C [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=4.7Ω, Tj=150°C

800

Eon

600

400

Eoff

200

Collector current: IC [A]

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: R

G [Ω]

Err

0

0 200 400 600 800

Collector-Emitter voltage: V

CE [V]

(Main terminals)

3