Fuji Electric 2MBI300VB-060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI300VB-060-50

IGBT Modules

IGBT MODULE (V series)
600V / 300A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 2.5- 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5- 3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 3.5
Terminals (*3) - 3.5

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 600 V
GES ±20 V

C Continuous TC=80°C 300

I

C pulse 1ms 600

I

C 300

-I

C pulse 1ms 600

-I

C 1 device 1360 W
j 175

Tjop 150

C 125
stg -40 ~ 125

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 600V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 300mA 6.2 6.7 7.2 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 3.0 - Ω
ies VCE

on

t

r - 300 -

t

r (i) - 100 -

t

off - 600 -

t

f - 70 -

t

F

V
(terminal)

F

V
(chip)

rr IF = 300A - 200 - nsec

VCE = 0V, VGE = ±20V

T

V

GE = 15V

C = 300A

I

V

GE = 15V

C = 300A

I

= 10V, VGE = 0V, f = 1MHz - 20 - nF

VCC = 300V LS = 30nH

C = 300A

I

GE = ±15V

V

G = 4.7Ω

R

j = 150°C

T

V

GE = 0V

F = 300A

I

V

GE = 0V

F = 300A

I

j=25°C - 1.80 2.25
j=125°C - 2.10 -

T

j=150°C 2.30

T
T

j=25°C - 1.60 2.05
j=125°C - 1.90 -

T

j=150°C 2.00

T

Tj=25°C
Tj=125°C

j=150°C 1.57

T

Tj=25°C
Tj=125°C

j=150°C 1.47

T

Characteristics

min. typ. max.

- - 400 nA

- 650 -

- 1.70 2.15

- 1.60 -

- 1.60 2.05

- 1.50 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.025 -

IGBT - - 0.110
FWD - - 0.180

Units

Units

°C/W

V

nsec

V

1

7723a

JULY 2015

2MBI300VB-060-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

700

VGE=20V 15V

600

12V

500

400

10V

300

200

Collector current: IC [A]

100

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

V

GE= 15V / chip

700

600

500

125°CTj=25°C

150°C

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

700

600

VGE= 20V

500

15V

12V

400

10V

300

200

Collector current: IC [A]

100

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

8

400

300

200

Collector Current: IC [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

VGE= 0V, ƒ= 1MHz, Tj= 25°C

100

Cies

10

***

6

4

2

Collector-Emitter Voltage: VCE [V]

IC=600A
I

C=300A
C=150A

I

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

CC=300V, IC=300A, Tj= 25°C

V

20

15

10

VCE

5

0

-5

VGE

400

300

200

100

0

-100

Coes

Cres

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 10 20 30

Collector-Emitter voltage: V

CE [V]

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-200

-300

-400

Collector-Emitter voltage: VCE [V]

-2 -1 0 1 2 3

Gate charge: Q

2

g [ μC]

2MBI300VB-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=125°C

V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800

V

CC=300V, IC=300A, VGE=±15V, Tj=125°C

10000

1000

toff

Collector current: I

C [A]

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=150°C

V

10000

ton

tr

1000

toff ton

tr

100

tf

Switching time: ton, tr, toff, tf [nsec]

10

tf

0 200 400 600 800

Collector current: I

C [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

CC=300V, VGE=±15V, RG=4.7Ω, Tj=125, 150°C

V

30

ton

toff

tr

20

Tj=125°C
T

j=150°C

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

G [Ω]

Switching loss vs. Gate resistance (typ.)

V

CC=300V, IC=300A, VGE=±15V, Tj=125, 150°C

120

Tj=125°C
T

100

80

60

40

20

j=150°C

tf

10

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 200 400 600 800

Collector current: I

C [A]

Reverse bias safe operating area (max.)

+VGE=15V, -VGE=15V, RG=4.7Ω, Tj=150°C

800

Eon

600

400

Eoff

200

Collector current: IC [A]

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: R

G [Ω]

Err

0

0 200 400 600 800

Collector-Emitter voltage: V

CE [V]

(Main terminals)

3

2MBI300VB-060-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

800

600

400

T

200

Forward current: IF [A]

150°C

j=25°C

125°C

0

0 1 2 3

Forward on voltage: V

F [V]

Reverse Recovery Characteristics (typ.)

V

CC=300V, VGE=±15V, RG=4.7Ω, Tj=150°C

1000

Reverse Recovery Characteristics (typ.)

V

CC=300V, VGE=±15V, RG=4.7Ω, Tj=125°C

1000

rr [nsec]

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 200 400 600 800

Forward current: I

Transient Thermal Resistance (max.)

1

trr

Irr

F [A]

FWD

rr [nsec]

trr

Irr

0.1

IGBT

100

0.01

Reverse recovery current: Irr [A]

Reverse recovery time: t

Thermal resistanse: Rth(j-c) [°C/W]

10

0.001

0 200 400 600 800

Forward current: I

F [A]

τ(i) [sec] 0.001 0.019 0.050 0.063

Rth(i) IGBT 0.01034 0.02458 0.04241 0.03291

[°C/W] FWD 0.01692 0.04023 0.06939 0.05385

0.001 0.01 0.1 1

Pulse Width : P

w [sec]

4

2MBI300VB-060-50

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

G1

G1
E1

E1

G2

G2
E2

E2

C1

C1

E2

E2

C2E1

C2E1

Weight: 270g (typ.)

5

2MBI300VB-060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of July 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property r ight owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual proper ty rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product qualit y and reliabilit y, a small perc entage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electr ical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electric al home applianc es • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto -shut-of f feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliabilit y such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear c ontrol equipment

• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. A ll rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electr ic Co., Ltd. nor its agents shall be liable for any injury c aused by any use of the products not in accordance with instructions
set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Information

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2

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3

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2

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3

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4

Technical Documents

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6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
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半导体综合目录

2

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4

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5

安装说明书

6

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7

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8

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2015 -10