2MBI300U2B-060
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
600V / 300A 2 in one-package
2. Equivalent circuit
Equivalent Circuit Schematic
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector current IC
ICp
-IC
-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
Screw Torque Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5)
Conditions
Continuous
1ms
1 device
AC:1min.
Rating
600
±20
300
600
300
600
1000
+150
-40 to +125
2500
3.5
3.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions Characteristics Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
*3:Biggest internal terminal resistance among arm.
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
VGE=15V, IC=300A
VCE=10V, VGE=0V, f=1MHz
VCC=300V
IC=300A
VGE=±15V
RG= 9.1 Ω
VGE=0V
IF=300A
IF=300A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Min. Typ. Max.
– – 2.0
– – 400
6.2 6.7 7.7
– 2.10 2.45
– 2.35 –
– 1.80 –
– 2.05 –
–23 –
– 0.40 1.20
– 0.22 0.60
– 0.16 –
– 0.48 1.20
– 0.07 0.45
– 1.90 2.30
– 1.95 –
– 1.60 –
– 1.65 –
– – 0.35
– 0.97 –
Thermal resistance characteristics
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Thermal resistance
Contact Thermal resistance
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
FWD
With thermal compound
– – 0.125
– – 0.23
– 0.025 –
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
nF
μs
V
μs
mΩ
°C/W
°C/W
°C/W
2MBI300U2B-060
Characteristics (Representative)
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
750
VGE=20V15V
600
12V
450
300
Collector current : Ic [A]
150
0
012345
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
750
Tj=125°CTj=25°C
600
10V
8V
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
750
600
450
300
Collector current : Ic [A]
150
0
012345
Collector-Emitter voltage : VCE [V]
VGE=20V15V
12V
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
10V
8V
450
300
Collector current : Ic [A]
150
0
01234
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
100.0
Cies
10.0
Cres
Coes
1.0
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Ic=600A
Ic=300A
Ic=150A
Vcc=300V, Ic=300A, Tj= 25°C
VGE
Capacitance : Cies, Coes, Cres [ nF ]
0.1
0102030
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ 100V/div ]
0 500 1000 1500
VCE
Gate charge : Qg [ nC ]
2MBI300U2B-060
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj= 25°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
toff
ton
0 150 300 450 600
Collector current : Ic [ A ]
tr
tf
Switching time : ton, tr, toff, tf [ nsec ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=300A, VGE=±15V, Tj= 25°C
10000
ton
toff
1000
tr
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj=125°C
10000
1000
100
10
0 150 300 450 600
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9.1
25
20
15
ton
toff
tr
tf
Ω
Eoff(125°C)
Eon(125°C)
Eoff(25°C)
Eon(25°C)
tf
100
Switching time : ton, tr, toff, tf [ nsec ]
10
1.0 10.0 100.0
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=300A, VGE=±15V, Tj= 125°C
40
30
20
10
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
1.0 10.0 100.0
Gate resistance : Rg [ Ω ]
Eon
Eoff
Err
10
5
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
0 150 300 450 600
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
750
600
450
300
Collector current : Ic [ A ]
150
0
0 200 400 600 800
Collector - Emitter voltage : VCE [ V ]
Err(125°C)
Err(25°C)
2MBI300U2B-060
[
]
y
IGBT Module
A
Forward current : IF
a
Forward current vs. Forward on voltage (typ.)
chip
750
600
Tj=25°C
450
300
150
0
0123
Forward on voltage : VF [ V ]
Tj=125°C
Transient thermal resistance (max.)
1.000
Reverse recovery current : Irr [ A ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=9.1
1000
time : trr [ nsec ]
100
Reverse recover
10
0 150 300 450 600
Forward current : IF [ A ]
Ω
trr (125°C)
Irr (125°C)
Irr (25°C)
trr (25°C)
0.100
0.010
Thermal resistanse : Rth(j-c) [°C/W ]
0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm
M233
FWD
IGBT
3-M5
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