Fuji Electric 2MBI300TA-060 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT Module

2MBI300TA-060

MS5F 5292

Oct. 22 ’02

Oct. 23 ’02

Y.Kobayashi

T.Miyasaka

K.Yamada

T.Fujihira

Fuji Electric Co.,Ltd.
Matsumoto Factory

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R e v i s e d R e c o r d s

Class i-

Date

Oct.-23-’02

Nov.-29-’02 Revisio n

fication Ind. Content

enactment

Revised Reliability test

a

conditions (P7/14)

Applied

date Drawn Checked Approved

Issued

date

Y.Kobayashi

T.Miyasaka

K.Yamada

T.Miyasaka

K.Yamada

T.Fujihira

T.Fujihira

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1. Outline Drawing ( Unit : mm )

2MBI300TA-060

2. Equivalent circuit

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3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified

Zero gate voltage

Collector current

Items Symbols Conditions

）

Maximum

Ratings

Collector-Emitter voltage VCES Ic=1mA 600 V

Gate-Emitter voltage VGES ±20 V

Ic Duty=100 %

Collector c urrent Ic pulse 1ms

IF

Duty=75 %

300

600

300

IF pulse 1ms 600

Collector P ower Dissipation Pc 860 W

1 device

Junction temperature Tj 150

Storage temperature Tstg -40~ +125

Isolation voltage

Screw Torque

(*1)

Viso AC : 1min. 2500 V

Mounting

Terminals

(*2)

(*2)

3.5

3.5

(*1) All terminals should be connect ed together when isolation test will be done.

(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)

Terminal 2.5~3.5Nm (M5)

4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)

Characteristics

Items Symbols Conditions

min. typ. Max.

Units

A

℃
℃

Nm

Units

Gate-Emitter leakage current I
Gate-Emitter
threshold voltage

Collector-Emitter

VCE(sat)

I

CESVGE

GESVCE

V

GE(th)VCE

= 0 V, V

= 0 V, V

= 600 V - - 2.0 mA

CE

= ±20 V - - 400

GE

= 20 V, Ic = 300 mA 6.2 6.7 7.7 V

VGE = 15 V Chip - 1.85 ­ saturation voltage Ic = 300 A Terminal - 2.1 2.4
Input capacitance Cies

Output capacitance Coes V

VGE =

CE

0 V - 23000 -

= 10 V - 4100 - pF

Reverse transfer capacitance Cres f = 1 MHz - 3400 -

ton Vcc = 300 V - 0.4 1.2

Turn-on time tr Ic = 300 A - 0.2 0.6

tr

VGE = ±15 V - 0.1 -

(i)

Turn-off time

toff RG = 9.1



- 0.55 1.2

tf - 0.05 0.45

Forward on voltage V

FIF

= 300 A

Chip - 1.8 -

Terminal - 2.1 2.5

Reverse recovery time trr IF = 300 A - - 0.3

Allowabe avalanche energy

during short circuit cutting off P

AV

Ic > 600A, Tj = 125

℃

170 - - mJ

(Non-repetitive)

μ

μ

A

n

V

s

V

s

5. Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance

R

th(j-c)

IGBT - - 0.145

(1 device) FWD - - 0.32℃/

Contact Thermal resistance Rth(c-f) With thermal c ompound

* This is the value which is defined mounting on the additional cooling fin
with t hermal compound.

※

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Characteristics

min. typ. Max.

- 0.025 -

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Units

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6. Indication on module

2MBI300TA-060

300A 600V

Lot No.

7. Applicable category

This specification is applied to IGBT Module named 2MBI300TA-060

8. Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35Ｃ and

・

humidity of 45 to 75% .

Store modules in a place with few temperature changes in order to avoid

・

condensation on the module surface.

Avoid exposure to corrosive gases and dust.

・

Avoid excessive external force on the module.

・

Place of manufucturing

Store modules with unprocessed terminals.

・

Do not drop or otherwise shock the modules when tranporting.

・

9. Definitions of switching time

R G

VGE

VCE

～

～

～

90%

0V

Ic

90%

V

CE

t

f

t

off

～

0V

V

L

Vcc

Ic

GE

V

CE

Ic

0V
0A

10%

90%

t

rr

I

rr

～

10% 10%

～

t

r(i)

t

r

t

on

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10. Definition of the allowable avalance energy during short circuit cutfing of.

-VCEP

1

PAV=

2

-ICPIC

VCE

tf(SC)

11. UL recognition

×VCEP×ICP×tf(SC)

This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.

12. Packing and Labeling

Packing box

Display on the packing box

- Logo of production

- Type name

- Lot No.

Display

* Each modules are packed with electrical protection.

- Products quantity in a packing box

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13. Reliability test results

10G

Atmospheric pressure : 2.03×10

Pa

Used liquid : Water with ice and

boiling water

Reliability Test Items

Test
cate­gories

Mechanical Tests

Test items Test methods and conditions

1 Terminal Strength Pull force :

(Pull test) Test time : 10±1 sec. Method 1

2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･ m (M5) A - 112 5 ( 1 : 0 )

Test time : 10±1 sec. Method 2

3 Vibration Range of frequency : 10 ~ 500Hz A - 121 5 ( 1 : 0 )

Sweeping time : 15 min.
Acceleration :
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)

4 Shock Maximum ac celeration : 1000G A - 122 5 ( 1 : 0 )

Pulse width : 0.5msec.
Direction : Each X,Y,Z axis
Test time : 3 times/direction

1 High Temperature Storage temp. : 125±5 ℃ B - 111 5 ( 1 : 0 )

Storage Test duration : 1000hr.

2 Low Temperature Storage temp. : -40±5 ℃ B - 112 5 ( 1 : 0 )

Storage Test duration : 1000hr.

3 Temperature Storage temp. : 85±3 ℃ B - 121 5 ( 1 : 0 )

Humidity Relative humidity : 85±5%
Storage Test duration : 1000hr.

4 Unsaturated Test temp. : 121 ℃ B - 123 5 ( 1 : 0 )

Pressure Cooker

Test duration : 20hr.

5 Temperature

Cycle Test temp. :

a

40N

a

5

(Reference value)

Low temp. -40 -5 ℃

High temp. 125 -5 ℃

+3

+5

Reference

norms

EIAJ

ED-4701

A - 111 5 ( 1 : 0 )

B - 131 5 ( 1 : 0 )

Number

of sample

Accept­ance
number

Environment Tests

6 Thermal Shock

RT 5 ~ 35 ℃

Dwell time : High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

Number of cycles : 100 cycles

Test temp. :

Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles

High temp. 100 -5

Low temp. 0 -0 ℃

a

+0

+5

B - 141 5 ( 1 : 0 )

℃

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wetting tests, for example, moisture resistance tests , each component shall be made wipe or dry

Reliability Test Items

Test
cate­gories

Endurance Tests

Reference

Test items Test methods and conditions

1 High temperature

Reverse Bias Test temp. :

Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

Test duration : 1000hr.

2 High temperature

Bias Test temp. :

Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E

Test duration : 1000hr.

3 Temperature B - 121 5 ( 1 : 0 )

Humidity Bias Test temp. :

Relative humidity :
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

Test duration : 1000hr.

4 Intermitted ON time : 2 sec. D - 322 5 ( 1 : 0 )

Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
( for IGBT )

Number of cycles : 15000 cycles

Ta = 125 -5 ℃
(Tj ≦ 150 ℃)

VGE = 0V

Ta = 125 -5
(Tj ≦ 150 ℃)

VCE = 0V

85 +-3oC
85 +-5%

VGE = 0V

 Tj=100±5 deg
Tj ≦ 150 ℃, Ta=25±5 ℃

+0

+0

℃

norms

EIAJ

ED-4701

D - 313 5 ( 1 : 0 )

D - 323 5 ( 1 : 0 )

Number

of sample

Accept­ance
number

Failure Criteria

Item Characteristic Symbol Failure criteria Unit Note

Lower limit Upper limit

Electrical Leakage current ICES - USL×2 m A

characteristic ±IGES - USL×2 A

Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA

Saturation voltage VCE(sat) - USL×1.2 V

Forward voltage VF - USL×1.2 V

Thermal IGBT  VGE - USL×1.2 mV

resistance or  VCE

FWD

Isolation voltage Viso Broken insulation -

Visual Visual inspection

inspection Peeling - The visual sample -

Plating

and the others

Note : Each parameter measurement read-outs shall be made after stabilizing the components at room

ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the

VF - USL×1.2 mV



LSL : Lower specified limit.

USL : Upper specified limit.

completely before the measurement.

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Reliability Test Results

Test

cate-

gories

Reference

Test items

1 Terminal Strength A - 111 5 0

(Pull test) Method 1

2 Mounting Strength A - 112 5 0

3 Vibration A - 121 5 0

norms

EIAJ ED-4701

Method 2

Number

of test

sample

Number

of failure

sample

Mechanical Tests

4 Shock A - 122 5 0

1 High Temperature Storage B - 111 5 0

2 Low Temperature Storage B - 112 5 0

3 Temperature Humidity B - 121 5 0

Storage

4 Unsaturated B - 123 5 0

Pressure Cooker

Environment Tests

5 Temperature Cycle B - 131 5 0

6 Thermal Shock B - 141 5 0

1 High temperature Reverse Bias D - 313 5 0

2 High temperature Bias D - 323 5 0

( for gate )

3 Temperature Humidity Bias B - 121 5 0

Endurance Tests

4 Intermitted Operating Life D - 322 5 0

(Power cycling)
( for IGBT )

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Collector current vs. Collector-Emitter voltage

[ Inverter ]

800

Tj= 25C (typ.)

Collector current vs. Collector-Emitter voltage

[ Inverter ]

800

Tj= 125C (typ.)

600

400

Collector current : Ic [ A ]

200

0

0 1 2 3 4 5

VGE= 20V

15V

12V

Collector - Emitter voltage : VCE [ V ]

[ Inverter ]

Collector current vs. Collector-Emitter voltage

800

600

400

VGE=15V (typ.)

Tj= 25C

10V

8V

Tj= 125C

600

400

Collector current : Ic [ A ]

200

0

0 1 2 3 4 5

15VVGE= 20V

Collector - Emitter voltage : VCE [ V ]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage

12

10

8

6

Tj= 25C (typ.)

12V

10V

8V

Collector current : Ic [ A ]

200

0

0 1 2 3 4

Collector - Emitter voltage : VCE [ V ]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

50000

10000

5000

Capacitance : Cies, Coes, Cres [ pF ]

1000

VGE=0V, f= 1MHz, Tj= 25C

Cies

Coes

Cres

4

2

Collector - Emitter voltage : VCE [ V ]

0

5 10 15 20 25

Ic=600A

Ic=300A

Ic=150A

Gate - Emitter voltage : VGE [ V ]

[ Inverter ]

Dynamic Gate charge (typ.)

500

400

300

200

100

Collector - Emitter voltage : VCE [ V ]

Vcc=300V, Ic=300A, Tj= 25C

25

20

15

10

5

Gate - Emitter voltage : VGE [ V ]

500

0 5 10 15 20 25 30 35

Collector - Emitter voltage : VCE [ V ]

0

0 200 400 600 800 1000 1200 1400

Gate charge : Qg [ nC ]

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Switching time vs. Collector current (typ.)

[ Inverter ]

Vcc=300V, VGE=+-15V, Rg=9.1ohm, Tj= 25C

1000

Switching time vs. Collector current (typ.)

[ Inverter ]

Vcc=300V, VGE=+-15V, Rg= 9.1ohm, Tj= 125C

1000

toff

ton

tr

ton

toff

tr

100

Switchi ng time : ton, tr, toff, tf [ nsec ]

10

0 200 400 600

Collector current : Ic [ A ]

[ Inverter ]

Switching time vs. Gate resistance (typ.)

Vcc=300V, Ic=300A, VGE=+-15V, Tj= 25C

5000

1000

100

Switching time : ton, tr, toff, tf [ nsec ]

100

tf

tf

Switchi ng time : ton, tr, toff, tf [ nsec ]

10

0 200 400 600

Collector current : Ic [ A ]

[ Inverter ]

Switching loss vs. Collector current (typ.)

30

toff

ton

tr

tf

20

10

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Vcc=300V, VGE=+-15V, Rg=9.1ohm

Eon(125C)

Eoff(125C)

Eoff(25C)

Eon(25C)

Err(125C)

Err(25C)

10

1 10 50

Gate resistance : Rg [ ohm ]

[ Inverter ]

Switching loss vs. Gate resistance (typ.)

Vcc=300V, Ic=300A, VGE=+-15V, Tj= 125C

70

60

50

40

30

20

10

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

0

5 10 100

Gate resistance : Rg [ ohm ]

Eon

Eoff

Err

0

0 200 400 600

Collector current : Ic [ A ]

[ Inverter ]

Reverse bias safe operating area

+VGE=15V, -VGE<=15V, Rg>=9.1ohm, Tj<=125C

800

700

600

500

400

300

Collector current : Ic [ A ]

200

100

0

0 200 400 600 800

Collector - Emitter voltage : VCE [ V ]

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Forward current vs. Forward on voltage (typ.)

[ Inverter ]

500

300

Reverse recovery characteristics (typ.)

[ Inverter ]

Vcc=300V, VGE=+-15V, Rg=9.1ohm

400

300

200

Forward current : IF [ A ]

100

0

0 1 2 3

Forward on voltage : VF [ V ]

Transient thermal resistance

1

0.1

Tj=25CTj=125C

FWD

IGBT

100

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

30

0 200 400 600

Forward current : IF [ A ]

trr(125C)

Irr(25C)

trr(25C)

Irr(125C)

0.01

Thermal resistanse : Rth(j-c) [ C/W ]

1E-3

0.001 0.01 0.1 1

Pulse width : Pw [ sec ]

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Wa rnings

- This product shall be used within its abusolute maximun rating (voltage, current, and temperature).

This product may be broken in case of using beyond the ratings.

製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。
絶対最大定格を超えて使用すると、素子が破壊する場合があります。

- Conect adequate fuse or protector of circuit between three-phase line and this product to prevent
the equipment from causing secondary destruction.

万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて２次破壊を防いでください。

Use this product after realizing enough work ing on environment and considering of product's reliability life.

­This product may be broken before target life of the system in c ase of using beyond the product's reliability life.

製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,

­sulfurous acid gas), the product's performanc e and appearance can not be ensured easily.

酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。

- Use this product within the power c ycle curve(Thec hnical Rep.No:MT6M4057)
本製品は、パワーサイクル寿命カーブ以下で使用下さい（技術資料No.:MT6M40 57）

Never add mechanical stress to deform the main or control terminal.

­The deformed terminal may cause poor contact probrem.

主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合
があります。

- According to the outline drawing, select proper length of screw for main terminal.
Longer screws may break the case.

本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。　
ネジが長いとケースが破損する場合があります。

Use this product with keeping the cooling fin's flatness between screw holes within 100um and the

­rouphness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a cirtical accident.

冷却フィンはネジ取り付け位置間で平坦度を
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。

It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA

­specification. This product may be broken if the locus is out of the RBSOA.

ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。

If excessive static electricity is applied to the control terminals, the devices can be broken.

­Implement some countermeasures against static electricity.

制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。
取り扱い時は静電気対策を実施して下さい。

100um

以下、表面の粗さは

10um

以下にして下さい。　誤った取り扱

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Caut ions

- Fuji Electric is constantly making every endeavor to improve the product quality and reliability.　However,

semiconductor products may rarely happen to fail or malfunction. To prevent acc idents causing injuly or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of

the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.

富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計
など安全確保のための手段を講じて下さい。

- The application examples described in this specification only explain typical ones that used the Fuji Electric
produc ts. This s pecification never ensure to enforce the industrial property and other rights, nor license the

enforcement rights.

本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

- The product described in this specification is not designed nor made for being applied to the equipment or

systems used under life-threatening situations. When you consider applying the produc t of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine ralaying equipment or systems,　please apply after confirmation

of this product to be satisfied about system construction and required reliability.

本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.

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