FUJI ELECTRIC 2MBI225U4N-120-50 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

(RoHS compliant product)

2MBI225U4N-120-50

MS5F 6508

Feb. 14 ’06

Feb. 14 ’06

H.Kaneda

M.Watanabe

K.Yamada

T.Miyasaka

MS5F6508

1

a

14

H04-004-07b

R e v i s e d R e c o r d s

Date

Feb. -14 -’06

Sep. -20 -’07

Classi-

fication

Enactment

Revision

Ind. Content

Revised Outline Drawing

a

VCE(sat), R lead (P3/14,4/14)

Applied

date

Issued

date

Drawn Checked Checked Approved

M.W atanabe

S. Miyashit aT.K oga

K. Yamada

K. Yamada

T.Miyasaka

T.Miyasaka

MS5F6508

2

a

14

H04-004-06b

2MBI225U4N-120-50

　(RoHS compliant product)

1. Outline Drawing ( Unit : mm )

OUT

a

PN

2. Equivalent circuit

(2)

PC

PC

T1

T1

[Thermistor]

T2

T2

G1

G1

E1

E1

OUT

OUT

(3,4)

G2

G2

E2

E2

N

N

(1)

a

MS5F6508

３

14

H04-004-03a

Storage temperature

Contact Thermal resistance

5. Thermal resi stance characteristics

min.

typ.

max.

Characteri st ics

Lead resistance,

Zero gate voltage

Gate-Emitter

Gate-Emitter

T=25/50

o

C

T=100

o

C

T=25

o

C

Items

Tj=125

o

C

Tj=25

o

C

VF

Tj=25

o

C

Tj=125

o

C

VF

typ.

Tc=25

o

C

Isolation

4. Electrical ch aracteristics ( at Tj = 25

o

C un less ot herwise sp eci fied )

Tj=25

o

C

Tj=125

o

C

Tc=80

o

C

Tc=25

o

C

Tc=80

o

C

3. Absolute Maximu m Rating s ( at Tc= 25

o

C un less ot herwise sp eci fied )

Maxim um

Tj=125

o

C

VCE(sat)

Tj=25

o

C

Screw

max.

Characteri st ics

min.

Collector-Emitter voltage
Gate-Emitter voltage

Collector current

Collector Power Dissipation 1 device
Junction temperature

between terminal and copper base (*1)

voltage

between thermistor and others (*2)
Mounting (*3)

Torque

Terminals (*4)

Symbols Conditi ons

VCES
VGES

Ic Continuous

Icp 1ms

-Ic

-Ic pulse

1ms
Pc
Tj

Rati ngs

1200

±20
300
225
600
450
225

450
1040
+150

Tstg -40 to +125

Viso AC : 1min.

-

2500 VAC

3.5

4.5

Units

V
V

A

W

o

C

N m

(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
(*4) Recommendable Value : 3.5 to 4.5 Nm (M6)

Items Conditi onsSymbols

VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=225mA
Ic=225A
VGE=15V

collector current

leakage current

threshold voltage

Collector-Emitter

ICES - - 3.0

IGES

VGE(th)

VCE(sat)
(terminal)

saturation voltage

(chip)

Input capacitance

Cies

VCE=10V,VGE=0V,f=1MHz -

ton Vcc=600V - 0.32 1.20

Turn-on time

Inverter

tr Ic=225A - 0.10
tr(i) VGE=±15V - 0.03

Turn-off time

toff RG=3.0Ω ­tf - 0.07 0.30

IF=225A

Forward on voltage

(terminal)

VGE=0V

(chip)

Reverse recovery time

terminal-chip (*5)

Resistance

B value B

Thermistor

trr

IF=225A -

R lead 1.30 - mΩ

R

(*5) Biggest internal terminal resistance among arm.

- - 600

4.5 6.5 8.5

a

- 2.25 2.40

a

-

2.45 -

- 1.90

-

2.10 -

a

2.05

25

0.60

0.41 1.00

-

1.90 2.05

- 2.00 -

- 1.65 1.80

-

1.75 -

- 0.35

a

-

-

5000

465 495 520

3305

3375 3450 K

Units

mA

nA

V

V

- nF

-

us

V

us

-

Ω

Items Symbols Conditi ons Units

(1 device) (*6)
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.

Rth(j-c)Thermal resistance(1device)

IGBT --

Rth(c-f) with Thermal Compound

MS5F6508

- -

0.0167- -

0.12

0.20FWD

o

C/W

4

14

H04-004-03a

a

6.Recommend way of modu le mountin g to Heat sink Clampin g

(1) Initial : 1/3 specified torque, sequence (1)

→

(2)→(3)→(4)

(2) Final

Full specified torque (3.5 Nm),sequence(4)

(3)→(2)→(1)

Lo go of product ion

Lo t.No.

Place of manufacturing (code)

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

10. Definitio ns of swit ching time

11. Packin g and Labeling

Display on the packing box

7. Indi cation on module

225A 1200V

9. Sto rage and transport ation notes

8. Appl icable category

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

Heat sink

Module

：

→

(3)

(2)

(1)

(4)

Mounting holes

2MBI225U4N-120-50

This specification is applied to IGBT-Module named 2MBI225U4N-120-50.

•

Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.

Store modules in a place with few temperature changes in order to avoid condensation on the

•

module surface.

Avoid exposure to corrosive gases and dust.

•

Avoid excessive external force on the module.

•

Store modules with unprocessed terminals.

•

Do not drop or otherwise shock the modules when transporting.

•

0V

V

L

Vcc

R

G

VGE

VCE

Ic

GE

V

CE

Ic

0V
0A

10%

90%

～

～

0V

t

r r

I

r r

Ic

～

90%

10% 10%

t

r (i )

t

r

t

o n

～

V

CE

～

～

t

o f f

90%

t

f

MS5F6508

5

a

14

H04-004-03a