Fuji Electric 2MBI200VH-170-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
2MBI200VH-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
Screw torque
Note *1: All terminals should be connected together during the test.
Note *2 : Recommendable Value : 3.0 -6.0 N·m (M5 or M6)
Note *3 : Recommendable Value : 2.5 -5.0 N·m (M5)
between terminal and copper base (*1)
Mounting (*2) - 6.0
Terminals (*3) - 5.0
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance C
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance(1device) R
Contact thermal resistance (1device) (*4) R
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
CES 1700 V
GES ±20 V
C Continuous
I
C pulse 1ms 400
I
C 200
-I
C pulse 1ms 400
-I
C 1 device 1250 W
j 175
C=100°C 200
T
C=25°C 310
T
Tjop 150
C 125
stg -40 ~ 125
Viso AC : 1min. 4000 VAC
Symbols Conditions
CES VGE = 0V, VCE = 1700V - - 2.0 mA
GES VCE = 0V, VGE = ±20V - - 400 nA
GE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V
CE (sat)
V
(terminal)
CE (sat)
V
GE = 15V
V
C = 200A
I
(chip)
G (int) - - 3.8 - Ω
ies VCE = 10V, VGE = 0V, f = 1MHz - 19 - nF
on
t
t
r - 580 -
r (i) - 60 -
t
off - 1050 -
t
f - 140 -
t
F
V
(terminal)
F
V
VCC = 900V, IC = 200A
GE = ±15V, Rg_on= 6.8Ω, Rg_off= 3.6Ω
V
j=150°C, LS = 30nH
T
GE = 0V
V
F = 200A
I
(chip)
rr IF = 200A - 220 - nsec
th(j- c)
th(c-f) with Thermal Compound - 0.0125 -
IGBT - - 0.120
FWD - - 0.160
T
T
T
T
T
T
T
T
T
T
T
T
Package No. : M276
A
°C
N m
Characteristics
min. typ. max.
j=25°C - 2.15 2.60
j=125°C - 2.55 -
j=150°C - 2.60 -
j=25°C - 2.00 2.25
j=125°C - 2.40 -
j=150°C - 2.45 -
- 1150 -
j=25°C - 1.95 2.40
j=125°C - 2.20 -
j=150°C - 2.20 -
j=25°C - 1.80 2.25
j=125°C - 2.05 -
j=150°C - 2.05 -
Characteristics
min. typ. max.
Units
V
nsec
V
Units
°C/W
1
7939a
MAY 2012
2MBI200VH-170-50
3
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 25°C / chip
500
VGE=20V 15V 12V
400
300
10V
200
Collector current: Ic [A]
100
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
Collector current vs. Collector-Emitter voltage (typ.)
GE= 15V / chip
V
500
j=25°C
400
T
125°C
150°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
500
400
300
200
Collector current: Ic [A]
100
0
0 1 2 3 4 5
Collector-Emitter voltage: V
VGE= 20V
15V
12V
10V
8V
CE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
j= 25°C / chip
T
8
6
300
200
Collector Current: Ic [A]
100
0
0 1 2 3 4 5
Collector-Emitter Voltage: V
CE [V]
Gate Capacitance vs. Collector-Emitter Voltage
GE= 0V, ƒ= 1MHz, Tj= 25°C
V
100
Cies
10
***
1
Gate Capacitance: Cies, Coes, Cres [nF]
0.1
0 10 20 30
Collector-Emitter voltage: V
Cres
Coes
CE [V]
4
2
Collector-Emitter Voltage: VCE [V]
0
5 10 15 20 25
Gate-Emitter Voltage: V
GE [V]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=200A, Tj= 25°C
20
15
10
5
0
-5
-10
Gate-Emitter voltage: VGE [V] ,,
-15
-20
-3 -2 -1 0 1 2 3
VCE
VGE
Gate charge: Qg [μC]
Ic=400A
Ic=200A
Ic=100A
1200
900
600
300
0
-300
-600
-900
-1200
Collector-Emitter voltage: VCE [V] ,,
2
Loading...