Fuji Electric 2MBI200VH-170-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI200VH-170-50

IGBT Modules

IGBT MODULE (V series)
1700V / 200A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2 : Recommendable Value : 3.0 -6.0 N·m (M5 or M6)
Note *3 : Recommendable Value : 2.5 -5.0 N·m (M5)

between terminal and copper base (*1)
Mounting (*2) - 6.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance(1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1700 V
GES ±20 V

C Continuous

I

C pulse 1ms 400

I

C 200

-I

C pulse 1ms 400

-I

C 1 device 1250 W
j 175

C=100°C 200

T

C=25°C 310

T

Tjop 150

C 125
stg -40 ~ 125

Viso AC : 1min. 4000 VAC

Symbols Conditions

CES VGE = 0V, VCE = 1700V - - 2.0 mA
GES VCE = 0V, VGE = ±20V - - 400 nA

GE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V

GE = 15V

V

C = 200A

I

(chip)

G (int) - - 3.8 - Ω
ies VCE = 10V, VGE = 0V, f = 1MHz - 19 - nF

on

t
t

r - 580 -
r (i) - 60 -

t

off - 1050 -

t

f - 140 -

t

F

V
(terminal)

F

V

VCC = 900V, IC = 200A

GE = ±15V, Rg_on= 6.8Ω, Rg_off= 3.6Ω

V

j=150°C, LS = 30nH

T

GE = 0V

V

F = 200A

I

(chip)

rr IF = 200A - 220 - nsec

th(j- c)

th(c-f) with Thermal Compound - 0.0125 -

IGBT - - 0.120
FWD - - 0.160

T
T
T
T
T
T

T
T
T
T
T
T

Package No. : M276

A

°C

N m

Characteristics

min. typ. max.

j=25°C - 2.15 2.60
j=125°C - 2.55 -
j=150°C - 2.60 -
j=25°C - 2.00 2.25
j=125°C - 2.40 -
j=150°C - 2.45 -

- 1150 -

j=25°C - 1.95 2.40
j=125°C - 2.20 -
j=150°C - 2.20 -
j=25°C - 1.80 2.25
j=125°C - 2.05 -
j=150°C - 2.05 -

Characteristics

min. typ. max.

Units

V

nsec

V

Units

°C/W

1

7939a

MAY 2012

2MBI200VH-170-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

500

VGE=20V 15V 12V

400

300

10V

200

Collector current: Ic [A]

100

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

500

j=25°C

400

T

125°C

150°C

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

500

400

300

200

Collector current: Ic [A]

100

0

0 1 2 3 4 5

Collector-Emitter voltage: V

VGE= 20V

15V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

8

6

300

200

Collector Current: Ic [A]

100

0

0 1 2 3 4 5

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

Cies

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cres

Coes

CE [V]

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=900V, Ic=200A, Tj= 25°C

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V] ,,

-15

-20

-3 -2 -1 0 1 2 3

VCE

VGE

Gate charge: Qg [μC]

Ic=400A
Ic=200A
Ic=100A

1200

900

600

300

0

-300

-600

-900

-1200

Collector-Emitter voltage: VCE [V] ,,

2

2MBI200VH-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=6.8Ω, Rg_off=3.6Ω, Tj=125°C

10000

toff

1000

ton

100

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300 400 500

Collector current: Ic [A]

Vcc=900V, Ic=200A, V

GE=±15V, Tj=125°C

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

tr

tf

ton

toff

tr

tf

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=6.8Ω, Rg_off=3.6Ω, Tj=150°C

10000

toff

1000

ton

tr

100

tf

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300 400 500

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=900V, VGE=±15V, Rg_on=6.8Ω, Rg_off=3.6Ω

260
240
220
200
180
160
140
120
100

80
60
40
20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 100 200 300 400 500

Tj=125
T

j=150

o

C

o

C

Eon

Eoff

Err

Gate resistance: Rg_on, Rg_off [Ω]

Collector current: Ic [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)

Vcc=900V, Ic=200A, VGE=±15V, Tj=125, 150°C

400

350

300

250

200

150

100

50

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Tj=125oC

o

C

T

j=150

Eon

Eoff

Gate resistance: Rg_on, Rg_off [Ω]

Err

+VGE=15V, -VGE=15V, Rg_off=3.6Ω, Tj=150°C

500

400

300

200

Collector current: Ic [A]

100

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

3

CE [V]

2MBI200VH-170-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

500

T

400

300

200

Forward current: IF [A]

100

0

0 1 2 3

150°C

Forward on voltage: V

j=25°C

125°C

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=900V, VGE=±15V, Rg_on=6.8Ω, Tj=150°C

1000

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

1000

rr [nsec] ,,,

100

Reverse recovery current: Irr [A] ,,

Reverse recovery time: t

10

GE=±15V, Rg_on=6.8Ω, Tj=125°C

0 100 200 300 400 500

Forward current: I

Transient Thermal Resistance (max.)

1

Irr

trr

F [A]

rr [nsec] ,,,

100

Reverse recovery current: Irr [A] ,,

Reverse recovery time: t

10

0 100 200 300 400 500

Forward current: I

FWD safe operating area (max.)

T

j=150°C

500

400

300

Pmax=400kW

F [A]

4

r 1–e

Σ

n

=1

FWD

IGBT

t




•

n






-

–

τ



n




Irr

0.1

trr

Zth

0.01

n

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.01287 0.03263 0.04610 0.02839

Thermal resistanse: Rth(j-c) [°C/W] ***

0.001

n

[°C/W] FW D 0.01716 0.04351 0.06147 0.03786

0.001 0.01 0.1 1

Pulse Width : Pw [sec]

=

1 2 3 4

200

100

Reverse recovery current: Irr [A] ,,

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

CE [V]

4

2MBI200VH-170-50

1. Outline Drawing ( Unit : mm

)

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

2. Equivalent Circuit

Weight: 370g (typ.)

C1

G1

E1

C2E1

G2

E2

E2

5

2MBI200VH-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog c ontains the product specications, characteristics, data, materials, and structures as of May 2012.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

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implied, under any patent, copyright, trade secret or other intellectual proper ty right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
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the equipment from causing a physical injury, re, or other problem if any of the products become fault y. It is recommended to make your
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