Fuji Electric 2MBI200VB-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI200VB-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 200A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 2.5 -3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 3.5
Terminals (*3) - 3.5

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal c ompound.

CES 1200 V
GES ±20 V

C Continuous TC=100°C 200

I

C pulse 1ms 400

I

C 200

-I

C pulse 1ms 400

-I

C 1 device 1500 W
j 175

Tjop 150

C 125
stg -40 ~ 125

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 3.8 - Ω
ies VCE

on

t

r - 200 -

t

r (i) - 50 -

t

off - 800 -

t

f - 80 -

t

VF
(terminal)

VF
(chip)

rr IF = 200A - 150 - nsec

VCE = 0V, VGE = ±20V

T

V

GE = 15V

C = 200A

I

V

GE = 15V

C = 200A

I

= 10V, VGE = 0V, f = 1MHz - 18.2 - nF

VCC = 600V

C = 200A

I

GE = ±15V

V

G = 2.7Ω

R

j = 150°C

T

V

GE = 0V

F = 200A

I

V

GE = 0V

F = 200A

I

j=25°C - 1.95 2.40
j=125°C - 2.25 -

T

j=150°C 2.30

T
T

j=25°C - 1.75 2.20
j=125°C - 2.05 -

T

j=150°C 2.1

T

Tj=25°C
Tj=125°C

j=150°C 1.95

T

Tj=25°C
Tj=125°C

j=150°C 1.80

T

Characteristics

min. typ. max.

- - 400 nA

- 600 -

- 1.85 2.30

- 2.00 -

- 1.70 2.15

- 1.85 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.025 -

IGBT - - 0.100
FWD - - 0.160

Units

Units

°C/W

V

nsec

V

1

7726b

JULY 2015

2MBI200VB-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

500

400

VGE=20V 15V 12V

300

200

Collector current: IC [A]

100

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

500

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

500

400

VGE= 20V

15V

12V

300

200

Collector current: IC [A]

100

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

T

j=25°C

400

125°C

300

200

Collector Current: IC [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

Cies

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cres

Coes

CE [V]

150°C

8

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

CC=600V, IC=200A, Tj= 25°C

V

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-2 -1 0 1 2

VCE

VGE

Gate charge: Q

g [ μC]

IC=400A
I

C=200A
C=100A

I

800

600

400

200

0

-200

-400

-600

-800

Collector-Emitter voltage: VCE [V]

2

2MBI200VB-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C

V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300 400 500

Collector current: I

CC=600V, IC=200A, VGE=±15V, Tj=125°C

V

10000

1000

C [A]

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C

10000

Switching time: ton, tr, toff, tf [nsec]

1000

100

10

toff
ton

tr

tf

toff
ton

tr

tf

0 100 200 300 400 500

Collector current: I

C [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

V

CC=600, VGE=±15V, RG=2.7Ω, Tj=125, 150°C

60

Tj=125°C
T

toff

ton

tr

40

j=150°C

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

G [Ω]

Switching loss vs. Gate resistance (typ.)

CC=600V, IC=200A, VGE=±15V, Tj=125, 150°C

V

70

Tj=125°C

60

50

40

30

20

10

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

T

j=150°C

Gate resistance: R

G [Ω]

Eoff

Eon

Err

tf

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 100 200 300 400 500

Collector current: I

C [A]

Reverse bias safe operating area (max.)

+V

GE=15V, -VGE=15V, RG=2.7Ω, Tj=150°C

500

400

300

200

Collector current: IC [A]

100

0

0 400 800 1200 1600

Collector-Emitter voltage: V

(Main terminals)

CE [V]

3