Fuji Electric 2MBI200VB-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI200VB-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 200A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 2.5 -3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 3.5
Terminals (*3) - 3.5

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal c ompound.

CES 1200 V
GES ±20 V

C Continuous TC=100°C 200

I

C pulse 1ms 400

I

C 200

-I

C pulse 1ms 400

-I

C 1 device 1500 W
j 175

Tjop 150

C 125
stg -40 ~ 125

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 2.0 mA

GES

GE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 3.8 - Ω
ies VCE

on

t

r - 200 -

t

r (i) - 50 -

t

off - 800 -

t

f - 80 -

t

VF
(terminal)

VF
(chip)

rr IF = 200A - 150 - nsec

VCE = 0V, VGE = ±20V

T

V

GE = 15V

C = 200A

I

V

GE = 15V

C = 200A

I

= 10V, VGE = 0V, f = 1MHz - 18.2 - nF

VCC = 600V

C = 200A

I

GE = ±15V

V

G = 2.7Ω

R

j = 150°C

T

V

GE = 0V

F = 200A

I

V

GE = 0V

F = 200A

I

j=25°C - 1.95 2.40
j=125°C - 2.25 -

T

j=150°C 2.30

T
T

j=25°C - 1.75 2.20
j=125°C - 2.05 -

T

j=150°C 2.1

T

Tj=25°C
Tj=125°C

j=150°C 1.95

T

Tj=25°C
Tj=125°C

j=150°C 1.80

T

Characteristics

min. typ. max.

- - 400 nA

- 600 -

- 1.85 2.30

- 2.00 -

- 1.70 2.15

- 1.85 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.025 -

IGBT - - 0.100
FWD - - 0.160

Units

Units

°C/W

V

nsec

V

1

7726b

JULY 2015

2MBI200VB-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

500

400

VGE=20V 15V 12V

300

200

Collector current: IC [A]

100

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

500

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

500

400

VGE= 20V

15V

12V

300

200

Collector current: IC [A]

100

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

T

j=25°C

400

125°C

300

200

Collector Current: IC [A]

100

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

Cies

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cres

Coes

CE [V]

150°C

8

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

CC=600V, IC=200A, Tj= 25°C

V

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-2 -1 0 1 2

VCE

VGE

Gate charge: Q

g [ μC]

IC=400A
I

C=200A
C=100A

I

800

600

400

200

0

-200

-400

-600

-800

Collector-Emitter voltage: VCE [V]

2

2MBI200VB-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C

V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300 400 500

Collector current: I

CC=600V, IC=200A, VGE=±15V, Tj=125°C

V

10000

1000

C [A]

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C

10000

Switching time: ton, tr, toff, tf [nsec]

1000

100

10

toff
ton

tr

tf

toff
ton

tr

tf

0 100 200 300 400 500

Collector current: I

C [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

V

CC=600, VGE=±15V, RG=2.7Ω, Tj=125, 150°C

60

Tj=125°C
T

toff

ton

tr

40

j=150°C

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: R

G [Ω]

Switching loss vs. Gate resistance (typ.)

CC=600V, IC=200A, VGE=±15V, Tj=125, 150°C

V

70

Tj=125°C

60

50

40

30

20

10

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

T

j=150°C

Gate resistance: R

G [Ω]

Eoff

Eon

Err

tf

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

Err

0 100 200 300 400 500

Collector current: I

C [A]

Reverse bias safe operating area (max.)

+V

GE=15V, -VGE=15V, RG=2.7Ω, Tj=150°C

500

400

300

200

Collector current: IC [A]

100

0

0 400 800 1200 1600

Collector-Emitter voltage: V

(Main terminals)

CE [V]

3

2MBI200VB-120-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

500

400

j=25°C

300

T

200

Forward current: IF [A]

100

150°C

125°C

0

0 1 2 3

Forward on voltage: V

F [V]

Reverse Recovery Characteristics (typ.)

VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C

1000

rr [nsec]

100

Reverse Recovery Characteristics (typ.)

CC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C

V

1000

rr [nsec]

Irr

trr

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 100 200 300 400 500

Forward current: I

F [A]

Transient Thermal Resistance (max.) (b)

1

***

FWD

Irr

0.1

trr

IGBT

0.01

Reverse recovery current: Irr [A]

Reverse recovery time: t

Thermal resistanse: Rth(j-c) [°C/W]

10

0 100 200 300 400 500

Forward current: I

F [A]

0.001

0.001 0.01 0.1 1

n

[sec] 0.001 0.019 0.050 0.063

τ

n

IGBT 0.00940 0.02235 0.03855 0.02991

r

n

[°C/W] FWD 0.01504 0.03576 0.06168 0.04786

1 2 3 4

Pulse Width : P

4

∑

1

=

n

w [sec]

r

n

t

−









τ

n



1

eZth

−⋅=



FWD safe operating area (max.)

T

j=150°C

500

400

Pmax=240kW

300

200

100

Reverse recovery current: Irr [A]

0

0 500 1000 1500

Collector-Emitter voltage: V

(Main terminals)

CE [V]

4

2MBI200VB-120-50

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

G1

G1
E1

E1

G2

G2
E2

E2

C1

C1

E2

E2

Weight: 270g (typ.)

C2E1

C2E1

5

2MBI200VB-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of July 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric C o., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or war ranty, whether express or implied, relating to the infringement or alleged
infringement of other 's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliabilit y than normal, such as for the equipment listed below,
it is imperative to contac t Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-of f feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Europe
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www.fujielectric.co.jp/products/semiconductor/

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Information

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1

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2

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3

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4

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5

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6

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7

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8

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製品のお問い合わせ

10

改廃のお知らせ

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1

Semiconductors General Catalog

2

Product Information

3

Application Manuals

4

Technical Documents

5

Mounting Instructions

6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
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中国

1

半导体综合目录

2

产品信息

3

应用手册

4

技术资料

5

安装说明书

6

IGBT 损耗模拟软件

7

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8

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2015-10