FUJI ELECTRIC 2MBI200U4H-120 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

2MBI200U4H-120

MS5F 6035

Feb. 09 ’05

Feb. 09 ’05

S.Miyashita

T.Miyasaka

K.Yamada

Y.Seki

MS5F6035

1

a

13

H04-004-07b

R e v i s e d R e c o r d s

Date

Feb.-09 -’05 K. Yamada

Classi-

fication

Enactment

Ind. Content

Applied

date

Issued

Drawn Checked Checked Approved

T.Miyasaka

date

Revised characteristic s

Oct.-25-’05

aRevision

VCE(sat) (P4/13)

O.Ikawa

K.YamadaS.Miyashita

Y.Seki

T.Miyasaka

MS5F6035

2

a

13

H04-004-06b

1. Outline Drawing ( Unit : mm )

2MBI200U4H-120

2. Equivalent circuit

MS5F6035

3

a

13

H04-004-03a

Storage temperature

Screw

VCE(sat)

VCE(sat)

3. Absolute Maximu m Rating s ( at Tc= 25

o

C un less otherwise sp eci fied )

Maxim um

Tc=80

o

C

Tc=25

o

C

Tj=125

o

C

Tj=125

o

C

Tj=25

o

C

Tj=25

o

C

Isolation

Zero gate voltage

Gate-Emitter

Gate-Emitter

4. Electrical characteristics ( at Tj = 25

o

C un less otherwise sp eci fied )

Tc=25

o

C

Tc=80

o

C

typ.

max.

Characteri st ics

min.

VF

Tj=25

o

C

Tj=125

o

C

VF

Items

Tj=125

o

C-Tj=25

o

C

Lead resistance,

Collector-Emitter voltage
Gate-Emitter voltage

Symbols Conditi ons

VCES 1200
VGES

Ic Continuous

Collector current

Icp 1ms

-Ic

-Ic pulse
Collector Power Dissipation 1 device
Junction temperature

Pc
Tj

1ms

Tstg

voltage

Torque

between terminal and copper base (*1)

Mounting (*2)
Terminals (*3)

Viso

-

AC : 1min. 2500

(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)

Rati ngs

300
200
600
400
200

400
1040
+150

-40 to +125

3.5

4.5

Units

V
V±20

A

W

o

C

VAC

N m

Items

VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=200mA

collector current

leakage current

threshold voltage

ICES

IGES

VGE(th)

Ic=200A

Collector-Emitter

(terminal)

VGE=15V

saturation voltage

(chip)

Input capacitance

Cies

VCE=10V,VGE=0V,f=1MHz

ton Vcc=600V - 0.32 1.20

Turn-on time

Turn-off time

tr Ic=200A - 0.10
tr(i)

VGE=±15V ­toff RG=3.0Ω ­tf - 0.07 0.30

IF=200A

Forward on voltage

(terminal)

VGE=0V

(chip)

Reverse recovery time

terminal-chip (*4)

trr us

R lead

IF=200A -

(*4) Biggest internal terminal resistance among arm.

Conditi onsSymbols

- -

2.0

- - 400

4.5 6.5 8.5

- 2.10 2.25

a

-

2.30 -

- 1.90

-

-

2.10 ­22 - nF

aa

2.05

Units

mA

nA

V

V

0.60

- 0.03

us

0.41 1.00

-

- 1.90 -

- 1.65 1.80

-

1.80

1.75

1.95

V

-

- 0.35

0.53 - mΩ

MS5F6035

4

a

13

H04-004-03a