R e v i s e d R e c o r d s
Date
Feb.-09 -’05 K. Yamada
Classi-
fication
Enactment
Ind. Content
Applied
date
Issued
date
Drawn Checked Checked Approved
T.Miyasaka
Y.Seki
MS5F6032
2
13
H04-004-06b
1. Outline Drawing ( Unit : mm )
2MBI200U4B-120
2. Equivalent circuit
MS5F6032
3
13
H04-004-03a
Items
4. Electrical characteristics ( at Tj = 25
C un less otherwi se specifi ed )
3. Absolute Maximu m Rating s ( at Tc= 25
C un less otherwi se specifi ed )
Collector-Emitter voltage
Gate-Emitter voltage
Symbol s Conditi ons
VCES
VGES
Ic Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation 1 device
Junction temperature
Pc
Tj
Tstg
voltage
Torque
between terminal and copper base (*1)
Mounting (*2)
Terminals (*2)
Viso
-
AC : 1min. 2500 VAC
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Rati ngs
1200
±20
300
200
600
400
200
400
1040
+150
-40 to +125
3.5
Units
V
V
A
W
o
C
N m
Items
collector current
leakage current
threshold voltage
Symbols
ICES
IGES
VGE(th)
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=200mA
Ic=200A
Collector-Emitter
(terminal)
VGE=15V
saturation voltage
(chip)
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz ton Vcc=600V - 0.32
Turn-on time
tr Ic=200A - 0.10
tr(i) VGE=±15V - 0.03 -
Turn-off time
toff RG=3.0Ω tf - 0.07 0.30
IF=200A
Forward on voltage
(terminal)
VGE=0V
(chip)
Reverse recovery time
terminal-chip (*3)
trr
R lead
IF=200A -
(*3) Biggest internal terminal resistance among arm.
Condit ions
- - 2.0
- - 400
4.5 8.56.5
- 2.10 2.25
-
2.30
- 1.90
22 - nF
0.41 1.00
-
1.85 2.00
- 1.95 -
- 1.65 1.80
-
1.75 -
- 0.35
-
0.97 - mΩ
-
2.05
-2.10
1.20
0.60
Units
mA
nA
V
V
us
V
us
MS5F6032
4
13
H04-004-03a