Fuji Electric 2MBI150VH-170-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI150VH-170-50

IGBT Modules

IGBT MODULE (V series)
1700V / 150A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2 : Recommendable Value : 3.0- 6.0 N·m (M5 or M6)
Note *3 : Recommendable Value : 2.5-5.0 N·m (M5)

between terminal and copper base (*1)
Mounting (*2) - 6.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance(1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1700 V
GES ±20 V

C Continuous

I

C pulse 1ms 300

I

C 150

-I

C pulse 1ms 300

-I

C 1 device 1110 W
j 175

C=100°C 150

T

C=25°C 250

T

Tjop 150

C 125
stg -40 ~ 125

Viso AC : 1min. 4000 VAC

Symbols Conditions

CES VGE = 0V, VCE = 1700V - - 2.0 mA
GES VCE = 0V, VGE = ±20V - - 400 nA

GE (th) VCE = 20V, IC = 150mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V

GE = 15V

V

C = 150A

I

(chip)

G (int) - - 5.0 - Ω
ies VCE = 10V, VG E = 0V, f = 1MHz - 16 - nF

on

t
t

r - 350 -
r (i) - 60 -

t

off - 1050 -

t

f - 140 -

t

F

V
(terminal)

F

V

VCC = 900V, IC = 150A

GE = ±15V, Rg_on=Rg_off= 4.8Ω

V

j=150°C, LS = 30nH

T

GE = 0V

V

F = 150A

I

(chip)

rr IF = 150A - 220 - nsec

th(j- c)

th(c-f) with Thermal Compound - 0.0250 -

IGBT - - 0.135
FWD - - 0.200

T
T
T
T
T
T

T
T
T
T
T
T

Package No. : M276

A

°C

N m

Characteristics

min. typ. max.

j=25°C - 2.20 2.65
j=125°C - 2.60 -
j=150°C - 2.65 -
j=25°C - 2.00 2.45
j=125°C - 2.40 -
j=150°C - 2.45 -

- 950 -

j=25°C - 1.95 2.40
j=125°C - 2.20 -
j=150°C - 2.20 -
j=25°C - 1.80 1.95
j=125°C - 2.05 -
j=150°C - 2.05 -

Characteristics

min. typ. max.

Units

V

nsec

V

Units

°C/W

1

7938b

MARCH 2016

2MBI150VH-170-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

400

300

VGE=20V

15V

12V

200

10V

100

Collector current: Ic [A]

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

400

Collector current vs. Collector-Emitter voltage (typ.)

j= 150°C / chip

T

400

VGE= 20V

300

200

100

Collector current: Ic [A]

15V

12V

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

8

T

300

j=25°C

125°C

150°C

200

100

Collector Current: Ic [A]

0

0 1 2 3 4 5

Collector-Emitter Voltage: V

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

V

GE= 0V, ƒ= 1MHz, Tj= 25°C

100

Cies

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cres

Coes

CE [V]

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=900V, Ic=150A, T

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V] ,,

-15

-20

-2 -1 0 1 2

VCE

VGE

Gate charge: Qg [μC]

j= 25°C

Ic=300A
Ic=150A
Ic=75A

1200

900

600

300

0

-300

-600

-900

-1200

[V],,

Collector-Emitter voltage: VCE

2

2MBI150VH-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=4.8Ω, Tj=125°C

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

Vcc=900V, Ic=150A, V

10000

1000

toff

ton

tr

tf

0 100 200 300 400

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff

ton

tr

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=4.8Ω, Tj=150°C

10000

toff

1000

ton

100

Switching time: ton, tr, toff, tf [nsec]

10

tr

tf

0 100 200 300 400

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=900V, V

GE=±15V, Rg_on=Rg_off=4.8Ω, Tj=125, 150°C

160

o

C

140

120

Tj=125
T

j=150

o

C

100

80

Eon

Eoff

100

tf

60

40

20

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: Rg_on, Rg_off [Ω]

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 100 200 300 400

Collector current: Ic [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)

Vcc=900V, Ic=150A, VGE=±15V, Tj=125, 150°C

250

200

150

100

50

Tj=125
T

j=150

o

C

o

C

Eon

Eoff

Err

+VGE=15V, -VGE=15V, Rg_off=4.8Ω, Tj=150°C

400

300

200

100

Collector current: Ic [A]

Err

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: Rg_on, Rg_off [Ω]

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

CE [V]

(Main terminals)

3

2MBI150VH-170-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

400

j=25°C

300

200

100

Forward current: IF [A]

150°C

0

0 1 2 3

Forward on voltage: V

T

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

1000

GE=±15V, Rg_on=4.8Ω, Tj=150°C

125°C

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

1000

rr [nsec] ,,,

100

Reverse recovery current: Irr [A] ,,

Reverse recovery time: t

10

GE=±15V, Rg_on=4.8Ω, Tj=125°C

Irr

trr

0 100 200 300 400

Forward current: I

F [A]

Transient Thermal Resistance (max.)

1

FWD

rr [nsec] ,,,

100

Reverse recovery current: Irr [A] ,,

Reverse recovery time: t

10

0 100 200 300 400

Forward current: I

FWD safe operating area (max.)

T

j=150°C

350

300

250

200

150

Pmax=300W

trr

Irr

F [A]

0.1

4

Zth

0.01

n

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.01448 0.03671 0.05186 0.03194

Thermal resistanse: Rth(j-c) [°C/W] ***

0.001

n

[°C/W] FW D 0.02145 0.05439 0.07684 0.04732

0.001 0.01 0.1 1

Pulse Width : Pw [sec]

=

Σ

n

=1

1 2 3 4

IGBT




•

r 1–e

n




t



-

–

τ



n




100

50

Reverse recovery current: Irr [A] ,,

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

CE [V]

4

2MBI150VH-170-50

1. Outline Drawing ( Unit : mm

)

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

2. Equivalent Circuit

Weight: 370g (typ.)

C1

G1

E1

C2E1

G2

E2

E2

5

2MBI150VH-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to c hange without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warrant y, whether express or implied, relating to the infringement or alleged
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the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is recommended to make your
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6