Fuji Electric 2MBI150VH-170-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
2MBI150VH-170-50
IGBT Modules
IGBT MODULE (V series)
1700V / 150A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
Screw torque
Note *1: All terminals should be connected together during the test.
Note *2 : Recommendable Value : 3.0- 6.0 N·m (M5 or M6)
Note *3 : Recommendable Value : 2.5-5.0 N·m (M5)
between terminal and copper base (*1)
Mounting (*2) - 6.0
Terminals (*3) - 5.0
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
Internal gate resistance R
Input capacitance C
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance(1device) R
Contact thermal resistance (1device) (*4) R
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
CES 1700 V
GES ±20 V
C Continuous
I
C pulse 1ms 300
I
C 150
-I
C pulse 1ms 300
-I
C 1 device 1110 W
j 175
C=100°C 150
T
C=25°C 250
T
Tjop 150
C 125
stg -40 ~ 125
Viso AC : 1min. 4000 VAC
Symbols Conditions
CES VGE = 0V, VCE = 1700V - - 2.0 mA
GES VCE = 0V, VGE = ±20V - - 400 nA
GE (th) VCE = 20V, IC = 150mA 6.0 6.5 7.0 V
CE (sat)
V
(terminal)
CE (sat)
V
GE = 15V
V
C = 150A
I
(chip)
G (int) - - 5.0 - Ω
ies VCE = 10V, VG E = 0V, f = 1MHz - 16 - nF
on
t
t
r - 350 -
r (i) - 60 -
t
off - 1050 -
t
f - 140 -
t
F
V
(terminal)
F
V
VCC = 900V, IC = 150A
GE = ±15V, Rg_on=Rg_off= 4.8Ω
V
j=150°C, LS = 30nH
T
GE = 0V
V
F = 150A
I
(chip)
rr IF = 150A - 220 - nsec
th(j- c)
th(c-f) with Thermal Compound - 0.0250 -
IGBT - - 0.135
FWD - - 0.200
T
T
T
T
T
T
T
T
T
T
T
T
Package No. : M276
A
°C
N m
Characteristics
min. typ. max.
j=25°C - 2.20 2.65
j=125°C - 2.60 -
j=150°C - 2.65 -
j=25°C - 2.00 2.45
j=125°C - 2.40 -
j=150°C - 2.45 -
- 950 -
j=25°C - 1.95 2.40
j=125°C - 2.20 -
j=150°C - 2.20 -
j=25°C - 1.80 1.95
j=125°C - 2.05 -
j=150°C - 2.05 -
Characteristics
min. typ. max.
Units
V
nsec
V
Units
°C/W
1
7938b
MARCH 2016
2MBI150VH-170-50
3
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 25°C / chip
400
300
VGE=20V
15V
12V
200
10V
100
Collector current: Ic [A]
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
Collector current vs. Collector-Emitter voltage (typ.)
GE= 15V / chip
V
400
Collector current vs. Collector-Emitter voltage (typ.)
j= 150°C / chip
T
400
VGE= 20V
300
200
100
Collector current: Ic [A]
15V
12V
10V
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
j= 25°C / chip
T
8
T
300
j=25°C
125°C
150°C
200
100
Collector Current: Ic [A]
0
0 1 2 3 4 5
Collector-Emitter Voltage: V
CE [V]
Gate Capacitance vs. Collector-Emitter Voltage
V
GE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
***
1
Gate Capacitance: Cies, Coes, Cres [nF]
0.1
0 10 20 30
Collector-Emitter voltage: V
Cres
Coes
CE [V]
6
4
2
Collector-Emitter Voltage: VCE [V]
0
5 10 15 20 25
Gate-Emitter Voltage: V
GE [V]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=150A, T
20
15
10
5
0
-5
-10
Gate-Emitter voltage: VGE [V] ,,
-15
-20
-2 -1 0 1 2
VCE
VGE
Gate charge: Qg [μC]
j= 25°C
Ic=300A
Ic=150A
Ic=75A
1200
900
600
300
0
-300
-600
-900
-1200
[V],,
Collector-Emitter voltage: VCE
2
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