Fuji Electric 2MBI150VA-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI150VA-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 150A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be c onnected together when isolation test will be done.
Note *2: Recommendable Value : 3.0 -5.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 -3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 5.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1200 V
GES ±20 V

C Continuous TC=100°C 150

I

C pulse 1ms 300

I

C 150

-I

C pulse 1ms 300

-I

C 1 device 785 W
j 175

Tjop 150

C 125
stg -40 ~ 125

A

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 1.0 mA
GES VCE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 150mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 5 - Ω
ies VCE = 10V, VG E = 0V, f = 1MHz - 12.6 - nF

on

t
t

r - 200 -
r (i) - 50 -

t

off - 600 -

t

f - 40 -

t

F

V
(terminal)

F

V
(chip)

rr IF = 150A - 150 - nsec

V

GE = 15V

C = 150A

I

V

GE = 15V

C = 150A

I

VCC = 600V LS = 30nH

C = 150A

I

GE = ±15V

V

G = 1.1Ω

R

j = 150°C

T

V

GE = 0V

F = 150A

I

V

GE = 0V

F = 150A

I

T

j=25°C - 2.05 2.50
j=125°C - 2.35 -

T

j=150°C 2.40

T
T

j=25°C - 1.75 2.20
j=125°C - 2.05 -

T

j=150°C 2.10

T

T

j=25°C - 1.85 2.30
j=125°C - 2,00 -

T

j=150°C 1.95

T
T

j=25°C - 1.70 2.15
j=125°C - 1.85 -

T

j=150°C 1.80

T

Characteristics

min. typ. max.

- 600 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.050 -

IGBT - - 0.19
FWD - - 0.31

Units

Units

°C/W

V

nsec

V

1

7907a

JULY 2015

2MBI150VA-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

350

300

V

12V

GE=20V 15V

250

200

150

100

Collector current: IC [A]

50

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

350

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

350

300

V

15V

GE= 20V

12V

250

200

150

100

Collector current: IC [A]

50

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

300

T

125°C150°C

j=25°C

250

200

150

100

Collector Current: IC [A]

50

0

0 1 2 3 4

Collector-Emitter Voltage: VCE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

ies

10

C

8

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: VGE [V]

Dynamic Gate Charge (typ.)

CC=600V, IC=150A, Tj= 25°C

V

20

15

10

5

V

CE

I

C=300A
C=150A

I

C=75A

I

800

600

400

200

CE [V]

1

Gate Capacitance: Cies, Coes, Cres [nF]

Cres

Coes

0.1
0 10 20 30

Collector-Emitter voltage: VCE [V]

0

-5

-10

Gate-Emitter voltage: VGE [V]

VGE

-15

-20

0

-200

-400
Collector-Emitter voltage: V

-600

-800

-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
Gate charge: Qg [μC]

2

2MBI150VA-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=1.1Ω, Tj=125°C

V

10000

1000

100

10

0 100 200 300 400

Collector current: IC [A]

CC=600V, IC=150A, VGE=±15V, Tj=125°C

V

10000

1000

100

10

0.1 1 10 100

ton
toff

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=1.1Ω, Tj=150°C

10000

ton
t

off

1000

tr

ton
toff

tr

100

tf

tf

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300 400

Collector current: IC [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

V

CC=600V, VGE=±15V, RG=1.1Ω, Tj=125, 150°C

45

40

35

30

tr

25

20

15

10

tf

5

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

0 100 200 300 400

Tj=125oC

o

j=150

T

C

Eon

Eoff

Err

Gate resistance: RG [Ω]

Switching loss vs. Gate resistance (typ.)

CC=600V, IC=150A, VGE=±15V, Tj=125, 150°C

V

20

18

16

14

12

10

8

6

4

2

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

0 1 10 100

Eon

Eoff

Err

Tj=125oC

j=150

T

Collector current: IC [A]

o

C

Reverse bias safe operating area (max.)

+V

350

300

250

200

150

100

50

0

0 400 800 1200 1600

Gate resistance: RG [Ω]

Collector current: IC [A]

GE=15V, -VGE=15V, RG=1.1Ω, Tj=150°C

Collector-Emitter voltage: VCE [V]

(Main terminals)

3

2MBI150VA-120-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

350

300

250

T

j=25°C

200

150

100

Forward current: IF [A]

150°C

125°C

50

0

0 1 2 3

Forward on voltage: VF [V]

Reverse Recovery Characteristics (typ.)

VCC=600V, VGE=±15V, RG=1.1Ω, Tj=150°C

1000

Reverse Recovery Characteristics (typ.)

CC=600V, VGE=±15V, RG=1.1Ω, Tj=125°C

V

1000

rr [nsec]

lrr
trr

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 100 200 300 400

Forward current: IF [A]

Transient Thermal Resistance (max.)

1

FWD

rr [nsec]

lrr

rr

t

0.1

IGBT

100

0.01

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 100 200 300 400

Forward current: IF [A]

Thermal resistanse: Rth(j-c) [°C/W]

0.001

0.001 0.01 0.1 1

[sec] 0.0023 0.0301 0 .0598 0.0708

τ

Rth IGBT 0.02038 0.05167 0.07299 0.04496

[°C/W] FWD 0.03325 0.08430 0.11910 0.07335

Pulse Width : Pw [sec]

FWD safe operating area (max.)

j=150°C

T

350

300

250

200

Pmax=150kW

150

100

50

Reverse recovery current: Irr [A]

0

0 500 1000 1500

Collector-Emitter voltage: VCE [V]

(Main terminals)

4

2MBI150VA-120-50

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

G1

G1
E1

E1

G2

G2
E2

E2

C1

C1

Weight: 180g (typ.)

C2E1

C2E1

E2

E2

5

2MBI150VA-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristic s, data, materials, and structures as of July 2015.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or lic ense, either express or
implied, under any patent, copyright, trade secret or other intellectual propert y right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warrant y, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semic onductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electr ical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Per sonal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunc tioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices • Safety devic es

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996 -2015 by Fuji Electric Co., Ltd. All rights reser ved.
No part of this Catalog may be reproduced in any for m or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.

6

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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www.fujielectric.co.jp/products/semiconductor/

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Information

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1

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2

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3

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4

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8

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10

改廃のお知らせ

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1

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2

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3

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4

Technical Documents

5

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6

IGBT Loss Simulation Software

7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

Fuji Electric Journal

9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

www.fujielectric.co.jp/products/semiconductor/catalog/
www.fujielectric.co.jp/products/semiconductor/model/
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半导体综合目录

2

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3

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4

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5

安装说明书

6

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7

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2015-10