2MBI150U2A-060
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
600V / 150A 2 in one-package
2. Equivalent circuit
Equivalent Circuit Schematic
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector current IC
ICp
-IC
-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
Screw Torque Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M5), Terminal 2.5 to 3.5 N·m(M5)
Conditions
Continuous
1ms
1 device
AC:1min.
Rating
600
±20
150
300
150
300
500
+150
-40 to +125
2500
3.5
3.5
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions Characteristics Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
*3:Biggest internal terminal resistance among arm.
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A
VCE=10V, VGE=0V, f=1MHz
VCC=300V
IC=150A
VGE=±15V
RG= 24 Ω
VGE=0V
IF=150A
IF=150A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Min. Typ. Max.
– – 1.0
– – 200
6.2 6.7 7.7
– 2.05 2.35
– 2.30 –
– 1.80 –
– 2.05 –
–12 –
– 0.40 1.20
– 0.22 0.60
– 0.16 –
– 0.48 1.20
– 0.07 0.45
– 1.80 2.20
– 1.85 –
– 1.60 –
– 1.65 –
– – 0.35
– 1.39 –
Thermal resistance characteristics
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Thermal resistance
Contact Thermal resistance
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
FWD
With thermal compound
– – 0.25
– – 0.46
– 0.05 –
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
nF
µs
V
µs
mΩ
°C/W
°C/W
°C/W
2MBI150U2A-060
Characteristics (Representative)
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
400
300
200
Collector current : Ic [A]
100
0
012345
Collector current vs. Collector-Emitter voltage (typ.)
400
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
VGE=20V15V
12V
Collector-Emitter voltage : VCE [V]
10V
8V
400
300
200
Collector current : Ic [A]
100
0
012345
Tj= 125°C / chip
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
10
VGE=20V 15V
12V
10V
8V
300
200
Collector current : Ic [A]
100
0
012345
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
100.0
10.0
Tj=25°C
Tj=125°C
Collector-Emitter voltage : VCE [V]
Cies
8
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Ic=300A
Ic=150A
Ic= 75A
Vcc=300V, Ic=150A, Tj= 25°C
VGE
1.0
Capacitance : Cies, Coes, Cres [ nF ]
0.1
0102030
Collector-Emitter voltage : VCE [V]
Coes
Cres
Gate - Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
0 200 400 600 800
Gate charge : Qg [ nC ]
VCE
2MBI150U2A-060
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω, Tj= 25°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
toff
ton
0 100 200 300
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
1.0 10.0 100.0
Gate resistance : Rg [ Ω ]
ton
toff
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω, Tj=125°C
10000
1000
tr
tf
100
Switching time : ton, tr, toff, tf [ nsec ]
10
0 100 200 300
Collector current : Ic [ A ]
ton
toff
tr
tf
Vcc=300V, VGE=±15V, Rg=24Ω
12
8
tr
4
tf
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
0 100 200 300
Collector current : Ic [ A ]
Eoff(1 25°C)
Eon(125°C)
Eoff(2 5°C)
Eon(25°C)
Err(125°C)
Err(25°C)
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
20
15
10
5
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
1.0 10.0 100.0
Eoff
Eon
Err
Gate resistance : Rg [ Ω ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 24Ω ,Tj <= 125°C
400
300
200
Collector current : Ic [ A ]
100
0
0 200 400 600 800
Collector - Emitter voltage : VCE [ V ]
2MBI150U2A-060
IGBT Module
Forward current vs. Forw ard on voltage (typ .)
400
300
200
Forward current : IF [ A ]
100
0
0123
1.000
chip
Tj=25 °C
Tj=125°C
Forward on voltage : VF [ V ]
Tr ansient thermal resistance (max.)
FWD
IGBT
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=24
1000
100
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
10
0 100 200 300
Forward current : IF [ A ]
Ω
trr (1 25°C)
trr (2 5°C)
Irr (125°C)
Irr (25°C)
0.100
0.010
Thermal resistanse : Rth(j-c) [ °C /W ]
0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm
M232
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