Fuji Electric 2MBI150U2A-060 Data Sheet

2MBI150U2A-060

IGBT Module U-Series

Features

· High speed switching

· Voltage drive

· Low inductance module structure

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

600V / 150A 2 in one-package

2. Equivalent circuit

Equivalent Circuit Schematic

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item Symbol

Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector current IC

ICp

-IC

-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
Screw Torque Mounting *2
Terminals *2

*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M5), Terminal 2.5 to 3.5 N·m(M5)

Conditions

Continuous

1ms

1 device

AC:1min.

Rating

600
±20
150
300
150
300
500

+150

-40 to +125
2500

3.5

3.5

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols Conditions Characteristics Unit

Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

Input capacitance
Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time
Lead resistance, terminal-chip*3

*3:Biggest internal terminal resistance among arm.

ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead

VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A

VCE=10V, VGE=0V, f=1MHz
VCC=300V
IC=150A
VGE=±15V
RG= 24 Ω

VGE=0V
IF=150A

IF=150A

Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C

Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C

Min. Typ. Max.

– – 1.0
– – 200

6.2 6.7 7.7
– 2.05 2.35
– 2.30 –
– 1.80 –
– 2.05 –
–12 –
– 0.40 1.20
– 0.22 0.60
– 0.16 –
– 0.48 1.20
– 0.07 0.45
– 1.80 2.20
– 1.85 –
– 1.60 –
– 1.65 –
– – 0.35
– 1.39 –

Thermal resistance characteristics

Items Symbols Conditions Characteristics Unit

Min. Typ. Max.

Thermal resistance

Contact Thermal resistance
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

Rth(j-c)
Rth(j-c)
Rth(c-f)*4

IGBT
FWD
With thermal compound

– – 0.25
– – 0.46
– 0.05 –

Unit

V
V
A

W
°C

VAC
N·m

mA
nA
V
V

nF
µs

V

µs
mΩ

°C/W
°C/W
°C/W

2MBI150U2A-060

Characteristics (Representative)

IGBT Module

Collector current vs. Collector-Emitter voltage (typ.)

400

300

200

Collector current : Ic [A]

100

0

012345

Collector current vs. Collector-Emitter voltage (typ.)

400

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

VGE=20V15V

12V

Collector-Emitter voltage : VCE [V]

10V

8V

400

300

200

Collector current : Ic [A]

100

0

012345

Tj= 125°C / chip

Collector-Emitter voltage : VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

VGE=15V / chip Tj=25°C / chip

10

VGE=20V 15V

12V

10V

8V

300

200

Collector current : Ic [A]

100

0

012345

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

100.0

10.0

Tj=25°C

Tj=125°C

Collector-Emitter voltage : VCE [V]

Cies

8

6

4

2

Collector - Emitter voltage : VCE [ V ]

0

5 10152025

Gate - Emitter voltage : VGE [ V ]

Ic=300A
Ic=150A
Ic= 75A

Vcc=300V, Ic=150A, Tj= 25°C

VGE

1.0

Capacitance : Cies, Coes, Cres [ nF ]

0.1

0102030

Collector-Emitter voltage : VCE [V]

Coes

Cres

Gate - Emitter voltage : VGE [ 5V/div ]

Collector-Emitter voltage : VCE [ 200V/div ]

0 200 400 600 800

Gate charge : Qg [ nC ]

VCE