Fuji Electric 2MBI100VA-170-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI100VA-170-50

IGBT Modules

IGBT MODULE (V series)
1700V / 100A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together when isolation test will be done.
Note *2 : Recommendable Value : 3.0 ~5.0 N·m (M5 or M 6)
Note *3 : Recommendable Value : 2.5 ~5.0 N·m (M5)

between terminal and copper base (*1)
Mounting (*2) - 5.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance(1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1700 V
GES ±20 V

C Continuous

I

C pulse 1ms 200

I

C 100

-I

C pulse 1ms 200

-I

C 1 device 665 W
j 175

C=100°C 100

T

C=25°C 140

T

Tjop 150

C 125
stg -40 ~ 125

Viso AC : 1min. 4000 VAC

Symbols Conditions

CES VGE = 0V, VCE = 1700V - - 1.0 mA
GES VCE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V

GE = 15V

V

C = 100A

I

(chip)

G (int) - - 10 - Ω
ies VCE = 10V, VG E = 0V, f = 1MHz - 8.2 - nF

on

t
t

r - 550 -
r (i) - 70 -

t

off - 1300 -

t

f - 150 -

t

F

V
(terminal)

F

V

VCC = 900V, IC =100A

GE = ±15V, Rg_on=Rg_off= 16Ω

V

j=150°C, LS = 30nH

T

GE = 0V

V

F = 100A

I

(chip)

rr IF = 100A - 140 - nsec

th(j- c)

th(c-f) with Thermal Compound - 0.050 -

IGBT - - 0.23
FWD - - 0.42

T
T
T
T
T
T

T
T
T
T
T
T

Package No. : M263

A

°C

N m

Characteristics

min. typ. max.

j=25°C - 2.15 2.55
j=125°C - 2.55 -
j=150°C - 2.60 -
j=25°C - 2.00 2.45
j=125°C - 2.40 -
j=150°C - 2.45 -

- 1250 -

j=25°C - 1.90 2.35
j=125°C - 2.15 -
j=150°C - 2.15 -
j=25°C - 1.80 2.25
j=125°C - 2.05 -
j=150°C - 2.05 -

Characteristics

min. typ. max.

Units

V

nsec

V

Units

°C/W

1

7933c

MARCH 2016

2MBI100VA-170-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

250

VGE=20V 15V 12V

200

150

10V

100

Collector current: Ic [A]

50

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

250

125°CTj=25°C

200

Collector current vs. Collector-Emitter voltage (typ.)

j= 150°C / chip

T

250

VGE= 20V

200

150

100

Collector current: Ic [A]

50

0

0 1 2 3 4 5

Collector-Emitter voltage: V

15V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

8

6

150

100

Collector Current: Ic [A]

50

0

0 1 2 3 4

Collector-Emitter Voltage: V

150°C

CE [V]

Gate Capacitance vs. Collector-Emitter Voltage

VGE= 0V, ƒ= 1MHz, Tj= 25°C

100

10

***

1

Gate Capacitance: Cies, Coes, Cres [nF]

0.1
0 10 20 30

Collector-Emitter voltage: V

Cies

Cres

Coes

CE [V]

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

GE [V]

Dynamic Gate Charge (typ.)

Vcc=900V, Ic=100A, T

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5

VCE

VGE

Gate charge: Qg [μC]

j= 25°C

Ic=200A
Ic=100A
Ic=50A

1200

900

600

300

0

-300

-600

-900

-1200

Collector-Emitter voltage: VCE [V]

2

2MBI100VA-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=16Ω, Tj=125°C

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

Vcc=900V, Ic=100A, V

10000

1000

toff

ton

0 50 100 150 200 250

Collector current: Ic [A]

GE=±15V, Tj=125°C

toff

tr

tf

ton
tr

Switching time vs. Collector current (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=16Ω, Tj=150°C

10000

toff

ton

0 50 100 150 200 250

Collector current: Ic [A]

tr

tf

Switching time: ton, tr, toff, tf [nsec]

1000

100

10

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

Vcc=900V, VGE=±15V, Rg_on=Rg_off=16Ω

120

100

80

Tj=125oC

o

T

j=150

C

Eon

60

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100 1000

Gate resistance: Rg_on, Rg_off [Ω]

tf

40

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 50 100 150 200 250

Collector current: Ic [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)

Vcc=900V, Ic=100A, VGE=±15V, Tj=125, 150°C

140

Tj=125oC

120

100

80

60

40

20

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100 1000

Gate resistance: Rg_on, Rg_off [Ω]

T

j=150

o

C

Eon

Eoff

Err

+VGE=15V, -VGE=15V, Rg_off=16Ω, Tj=150°C

250

200

150

100

Collector current: Ic [A]

50

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

Eoff

Err

CE [V]

3

2MBI100VA-170-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

250

Tj=25°C

200

150

100

Forward current: IF [A]

50

0

0 1 2 3

150°C

Forward on voltage: V

125°C

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

GE=±15V, Rg_on=16Ω, Tj=150°C

1000

Reverse Recovery Characteristics (typ.)

Vcc=900V, V

1000

rr [nsec]

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

GE=±15V, Rg_on=16Ω, Tj=125°C

10

0 100 200 300

Forward current: I

Transient Thermal Resistance (max.)

1

Irr

trr

F [A]

FWD

rr [nsec]

100

Reverse recovery current: Irr [A]

Reverse recovery time: t

10

0 100 200 300

Forward current: I

FWD safe operating area (max.)

T

j=150°C

250

200

150

Pmax=180kW

100

Irr

trr

F [A]

0.1

4

Zth

=

0.01

n

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.02413 0.06119 0.08644 0.05324

Thermal resistanse: Rth(j-c) [°C/W] ***

0.001

n

[°C/W] FWD 0.04183 0.10606 0.14983 0.09228

0.001 0.01 0.1 1

1 2 3 4

Pulse Width : Pw [sec]

Σ

n

=1

IGBT




•

r 1– e

n




t



-

–

τ



n




50

Reverse recovery current: Irr [A]

0

0 500 1000 1500 2000

Collector-Emitter voltage: V

(Main terminals)

CE [V]

4

2MBI100VA-170-50

1. Outline Drawing ( Unit : mm

)

Outline Drawings, mm

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit Schematic

2. Equivalent Circuit

Weight: 180g (typ.)

C1

G1

E1

C2E1

G2

E2

E2

5

2MBI100VA-170-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric C o., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or war ranty, whether express or implied, relating to the infringement or alleged
infringement of other 's intellectual property rights which may arise from the use of the applications described herein.

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the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

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requirements.

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measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
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