Fuji Electric 2MBI100VA-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

2MBI100VA-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 100A / 2 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation P
Junction temperature T
Operating junction temperature (under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage

Screw torque

Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M 6)
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)

between terminal and copper base (*1)
Mounting (*2) - 5.0
Terminals (*3) - 5.0

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

Internal gate resistance R
Input capacitance C

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

CES 1200 V
GES ±20 V

C Continuous TC=100°C 100

I

C pulse 1ms 200

I

C 100

-I

C pulse 1ms 200

-I

C 1 device 555 W
j 175

Tjop 150

C 125
stg -40 ~ 125

A

°C

Viso AC : 1min. 2500 VAC

N m

Symbols Conditions

CES VGE = 0V, VCE = 1200V - - 1.0 mA
GES VCE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

G (int) - - 7.5 - Ω
ies VCE = 10V, VG E = 0V, f = 1MHz - 9.1 - nF

on

t
t

r - 200 -
r (i) - 50 -

t

off - 600 -

t

f - 40 -

t

F

V
(terminal)

F

V
(chip)

rr IF = 100A - 150 - nsec

V

GE = 15V

C = 100A

I

V

GE = 15V

C = 100A

I

VCC = 600V LS = 30nH

C = 100A

I

GE = ±15V

V

G = 1.6Ω

R

j = 150°C

T

V

GE = 0V

F = 100A

I

V

GE = 0V

F = 100A

I

T

j=25°C - 1.90 2.35
j=125°C - 2.20 -

T

j=150°C 2.25

T
T

j=25°C - 1.75 2.20
j=125°C - 2.05 -

T

j=150°C 2.10

T

T

j=25°C - 1.80 2.25
j=125°C - 1.95 -

T

j=150°C 1.90

T
T

j=25°C - 1.70 2.15
j=125°C - 1.85 -

T

j=150°C 1.80

T

Characteristics

min. typ. max.

- 600 -

Characteristics

min. typ. max.

th(j- c)

th(c-f) with Thermal Compound - 0.050 -

IGBT - - 0.27
FWD - - 0.48

Units

Units

°C/W

V

nsec

V

1

7906a

JULY 2015

2MBI100VA-120-50

3

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 25°C / chip

250

V

200

GE=20V 15V 12V

150

100

Collector current: IC [A]

50

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

250

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

250

GE= 20V

V

200

15V

12V

150

100

Collector current: IC [A]

50

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

j= 25°C / chip

T

10

200

T

125°C150°C

j=25°C

150

100

Collector Current: IC [A]

50

0

0 1 2 3 4

Collector-Emitter Voltage: VCE [V]

Gate Capacitance vs. Collector-Emitter Voltage

GE= 0V, ƒ= 1MHz, Tj= 25°C

V

100

ies

10

C

8

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: VGE [V]

Dynamic Gate Charge (typ.)

CC=600V, IC=100A, Tj= 25°C

V

20

15

10

5

CE

V

I

C=200A
C=100A

I

C=50A

I

800

600

400

200

CE [V]

1

Gate Capacitance: Cies, Coes, Cres [nF]

Cres

Coes

0.1
0 10 20 30

Collector-Emitter voltage: VCE [V]

0

-5

-10

Gate-Emitter voltage: VGE [V]

VGE

-15

-20

0

-200

-400
Collector-Emitter voltage: V

-600

-800

-1.0 -0.5 0.0 0.5 1.0
Gate charge: Qg [μC]

2

2MBI100VA-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time: ton, tr, toff, tf [nsec]

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C

V

10000

1000

100

10

0 100 200 300

Collector current: IC [A]

CC=600V, IC=100A, VGE=±15V, Tj=125°C

V

10000

1000

100

ton
t

tr

tf

ton
toff

tr

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=1.6Ω, Tj=150°C

10000

1000

off

ton
toff

tr

100

tf

Switching time: ton, tr, toff, tf [nsec]

10

0 100 200 300

Collector current: IC [A]

Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.)

V

CC=600V, VGE=±15V, RG=1.6Ω, Tj=125, 150°C

30

Tj=125oC

25

20

15

10

j=150

T

o

C

Eon

Eoff

Err

tf

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Gate resistance: RG [Ω]

Switching loss vs. Gate resistance (typ.)

CC=600V, IC=100A, VGE=±15V, Tj=125, 150°C

V

14

Tj=125oC

12

10

8

6

4

j=150

T

o

C

Eon

Eoff

Err

5

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

0 50 100 150 200 250

Collector current: IC [A]

Reverse bias safe operating area (max.)

+V

GE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C

250

200

150

100

Collector current: IC [A]

50

2

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: RG [Ω]

0

0 400 800 1200 1600

Collector-Emitter voltage: VCE [V]

(Main terminals)

3