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1. Outline Drawing ( Unit : mm )
2MBI100U4A-120
2. Equivalent circuit
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Storage temperature
Lead resistance,
Zero gate voltage
Screw
Tj=125
o
C
VCE(sat)
Gate-Emitter
3. Absolute Maximu m Ratings ( at Tc= 25
o
C un less otherwi se specifi ed )
Maxim um
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Tj=125
o
C
VCE(sat)
Tj=25
o
C
4. Electrical characteristics ( at Tj= 25
o
C un less otherwi se specifi ed )
Tj=25
o
C
Tc=25
o
C
Isolation
VF
Tj=25
o
C
Tj=125
o
C
VF
Tj=125
o
C
Tj=25
o
C
Items
Gate-Emitter
Collector-Emitter voltage
Gate-Emitter voltage
Symbol s Conditi ons
VCES 1200
VGES
Ic Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation 1 device
Junction temperature
Pc
Tj
Tstg
voltage
Torque
between terminal and copper base (*1)
Mounting (*2)
Terminals (*2)
Viso AC : 1min. 2500 VAC
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Ratings
±20
150
100
300
200
100
200
540
+150
-40 to +125
3.5
Units
V
V
A
W
o
C
N m
Items Condit ionsSymbols
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=100mA
collector current
leakage current
threshold voltage
ICES - - 1.0
IGES
VGE(th)
Ic=100A
Collector-Emitter
(terminal)
VGE=15V
saturation voltage
(chip)
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
ton Vcc=600V - 0.32 1.20
Turn-on time
tr Ic=100A - 0.10
tr(i) VGE=±15V - 0.03 -
Turn-off time
toff RG=5.6Ω tf - 0.07 0.30
IF=100A
Forward on voltage
(terminal)
VGE=0V
(chip)
Reverse recovery time
terminal-chip (*3)
trr
R lead
IF=100A -
(*3) Biggest internal terminal resistance among arm.
Characteri st ics
min.
typ. max.
- - 200
4.5
6.5 8.5
- 2.05 2.20
-
2.25
- 1.90 2.05
-
2.10 11 - nF
0.41 1.00
- 1.80 1.95
- 1.90 -
- 1.65 1.80
-
1.75 -
- 0.35
-
1.39 - mΩ
-
0.60
Units
mA
nA
V
V
us
V
us
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11. Reliability test results
Reli ability Test Items
100m/s
2
5000m/s
2
Low temp. -40
5
High temp. 125
5
RT 5 ~ 35
6
Thermal Shock
5
( 0 : 1 )
Test
cate-
Test items Test methods and conditions
gories
1 Terminal Strength Pull force : 40N
(Pull test) Test time : 10±1 sec.
2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5)
Test time : 10±1 sec.
3 Vibration Range of frequency : 10 ~ 500Hz
Sweeping time : 15 min.
Acceleration :
Sweeping direction : Each X,Y,Z axis
Mechanical Tests
Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration :
Pulse width : 1.0msec.
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 ℃
Humidity Relative humidity : 85±5%
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 120±2 ℃
Pressurized Vapor Test humidity : 85±5%
Test duration : 96hr.
5 Temperature
Cycle Test temp. :
±
℃
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 401
Ⅰ
Method
Test Method 402
Ⅱ
method
Test Method 403
Reference 1
Condition code B
Test Method 404
Condition code B
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
Number
of
sample
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
Acceptance
number
±
℃
℃
Environment Tests
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
Test Method 307
Ⅰ
method
Condition code A
Test temp. :
+0
High temp. 100 -5
+5
℃
Low temp. 0 -0 ℃
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles
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Reli ability Test Items
Test
Ta = 125
(Tj
150 ℃)
Ta = 125
(Tj
150 ℃)
2 oC
5%
Tj=100±5 deg
Tj ≦
150 ℃, Ta=25±5
categories
Test items Test methods and conditions
1 High temperature
Reverse Bias Test temp. :
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
Test duration : 1000hr.
2 High temperature
Bias (for gate) Test temp. :
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
Endurance TestsEndurance Tests
Test duration : 1000hr.
3 Temperature
Humidity Bias Test temp. :85±
Relative humidity :85±
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
4 Intermitted ON time : 2 sec.
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
( for IGBT )
Test duration : 1000hr.
Number of cycles : 15000 cycles
≦
VGE = 0V
≦
VCE = 0V
VGE = 0V
±5 ℃
±5 ℃
℃
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 101
Test Method 101
Test Method 102
Condition code C
Test Method 106
Number
of
sample
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
5 ( 0 : 1 )
Acceptance
number
Fail ure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Isolation voltage Viso Broken insulation Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
shall be made wipe or dry completely before the measurement.
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