1. Outline Drawing ( Unit : mm )
2MBI100U4A-120
2. Equivalent circuit
MS5F6061
3
13
H04-004-03a
3. Absolute Maximu m Ratings ( at Tc= 25
C un less otherwi se specifi ed )
4. Electrical characteristics ( at Tj= 25
C un less otherwi se specifi ed )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbol s Conditi ons
VCES 1200
VGES
Ic Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation 1 device
Junction temperature
Pc
Tj
Tstg
voltage
Torque
between terminal and copper base (*1)
Mounting (*2)
Terminals (*2)
Viso AC : 1min. 2500 VAC
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Ratings
±20
150
100
300
200
100
200
540
+150
-40 to +125
3.5
Units
V
V
A
W
o
C
N m
Items Condit ionsSymbols
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=100mA
collector current
leakage current
threshold voltage
ICES - - 1.0
IGES
VGE(th)
Ic=100A
Collector-Emitter
(terminal)
VGE=15V
saturation voltage
(chip)
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
ton Vcc=600V - 0.32 1.20
Turn-on time
tr Ic=100A - 0.10
tr(i) VGE=±15V - 0.03 -
Turn-off time
toff RG=5.6Ω tf - 0.07 0.30
IF=100A
Forward on voltage
(terminal)
VGE=0V
(chip)
Reverse recovery time
terminal-chip (*3)
trr
R lead
IF=100A -
(*3) Biggest internal terminal resistance among arm.
Characteri st ics
min.
typ. max.
- - 200
4.5
6.5 8.5
- 2.05 2.20
-
2.25
- 1.90 2.05
-
2.10 11 - nF
0.41 1.00
- 1.80 1.95
- 1.90 -
- 1.65 1.80
-
1.75 -
- 0.35
-
1.39 - mΩ
-
0.60
Units
mA
nA
V
V
us
V
us
MS5F6061
4
13
H04-004-03a