Fuji Electric 1MBI 600NN-060 Service Manual

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GES

C

C PULSE

C

C PULSE

C

j

stg

is

CESVGE

GESVCE

GE(th)VGE

CE(sat)VGE

iesVGE

oesVCE

res

ONVCC

rIC

OFFVGE

fRG

FIF

rrIF

th(j-c)

th(j-c)

th(c-f)

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IGBT MODULE ( N series )
nn Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

nn Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

nn Maximum Ratings and Characteristics

nn Outline Drawing

n Equivalent Circuit

• Absolute Maximum Ratings ( T

=25°C)

c

Items Symbols Ratings Units

Collector-Emitter Voltage V
Gate -Emitter Voltage V

Continuous I
Collector 1ms I
Current Continuous -I

1ms -I
Max. Power Dissipation P
Operating Temperature T
Storage Temperature T
Isolation Voltage A.C. 1min. V

600 V

± 20

600

1200

600
1200
2000 W
+150 °C

-40 ∼ +125
2500 V

Mounting *1 3.5

Screw Torque Terminals *2 4.5 Nm

Terminals *3 1.7

Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)

*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)

• Electrical Characteristics ( at T

=25°C )

j

Items Symbols Test Conditions Min. Typ. Max. Units

Zero Gate Voltage Collector Current I
Gate-Emitter Leackage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Input capacitance C
Output capacitance C
Reverse Transfer capacitance C

Turn-on Time

Turn-off Time
Diode Forward On-Voltage V

Reverse Recovery Time t

t
t
t
t

=0V VCE=600V 4.0 mA
=0V VGE=± 20V
=20V IC=600mA 4.5 7.5 V
=15V IC=600A 2.8 V
=0V 39600
=10V 8800 pF

f=1MHz 4000

=300V 0.6 1.2

=600A 0.2 0.6

=± 15V

=2.7Ω
=600A VGE=0V 3.0 V
=600A 300 ns

°C

V

A

60 µA

0.6 1.0

µs

0.2 0.35

• Thermal Characteristics

Items Symbols Test Conditions Min. Typ. Max. Units

Thermal Resistance R

R

IGBT 0.063
Diode 0.11 °C/W

R

With Thermal Compound 0.0125

Collector current vs. Collector-Emitter voltage

Collector current : I

[A]

Collector-Emitter voltage :V

[V]

Tj=25°C

Collector current vs. Collector-Emitter voltage

Tj=125°C

1400

1200

C

1000

CE

VGE=20V,15V,12V

800

600

400

200

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C

10

8

6

10V

8V

1400

VGE=20V,15V,12V,

1200

[A]

C

1000

800

600

Collector current : I

400

200

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage

Tj=125°C

10

[V]

CE

8

6

10V

8V

4

2

0

0 5 10 15 20 25

1000

[nsec]

f

, t

off

, t

r

, t

on

100

IC=
1200A

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current

VCC=300V, RG=2.7Ω, VGE±15V, Tj=25°C

600A
300A

t

on

t

off

t

r

t

f

4

2

Collector-Emitter voltage V

0

0 5 10 15 20 25

Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current

VCC=300V, RG=2.7Ω, VGE=±15V, Tj=125°C

1000

[nsec]

f

, t

off

, t

r

, t

on

100

IC=

1200A

600A
300A

t

off

t

on

t

r

t

f

Switching time : t

10

0 200 400 600 800 1000

Collector current : IC [A]

Switching time : t

10

0 200 400 600 800 1000

Collector current : IC [A]